Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: A method for fabricating a semiconductor device, includes forming a first dielectric film above a substrate, forming an opening in the first dielectric film, forming a catalytic characteristic film using at least one of a metal having catalytic characteristics and a conductive oxide having catalytic characteristics as its material on sidewalls and at a bottom of the opening, depositing a conductive material film using a conductive material in the opening in which the catalytic characteristic film is formed on the sidewalls and at the bottom, removing the catalytic characteristic film formed on the sidewalls of the opening, and forming a second dielectric film above the first dielectric film and the conductive material film after the removing.

Abstract: A method for fabricating a semiconductor device, includes forming a first dielectric film above a substrate, forming an opening in the first dielectric film, forming a catalytic characteristic film using at least one of a metal having catalytic characteristics and a conductive oxide having catalytic characteristics as its material on sidewalls and at a bottom of the opening, depositing a conductive material film using a conductive material in the opening in which the catalytic characteristic film is formed on the sidewalls and at the bottom, removing the catalytic characteristic film formed on the sidewalls of the opening, and forming a second dielectric film above the first dielectric film and the conductive material film after the removing.

Abstract: A semiconductor device is provided, including: a first barrier metal film provided by a PVD process in a recess formed in at least one insulating film, and containing at least one metal element belonging to any of the groups 4-A, 5-A, and 6-A; a second barrier metal film continuously provided by at least one of CVD and ALD processes on the first barrier metal film without being opened to atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; a third barrier metal film continuously provided by the PVD process on the second barrier metal film without being opened to the atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; and a first Cu film continuously provided on the third barrier metal film without being opened to the atmosphere and thereafter heated.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: According to one aspect of the present invention, provided is a method of manufacturing a semiconductor device, including: forming a first metal film on a substrate having a recessed portion in a surface thereof, by a plating method so as to bury the first metal film in at least part of the recessed portion; forming a second metal film on the first metal film by a film deposition method different from the plating method, the second metal film including, as a main component, a metal that is a main component of the first metal film and containing an impurity whose concentration is lower than concentration of an impurity contained in the first metal film; heat-treating the first and second metal films; and removing the first and second metal films except portions buried in the recessed portion.

Abstract: There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.

Abstract: A method and an apparatus for manufacturing a semiconductor device are provided capable of making a barrier metal layer having a thin film and providing a sufficient barrier property with a low manufacturing cost. The method includes forming a barrier metal layer 5 on predetermined positions on a Cu wiring layer 3 formed on a semiconductor substrate by a CVD method or an ALD method, and forming an Al layer 6 on the barrier metal layer 5 without exposing it to the atmosphere.

Abstract: Disclosed is a semiconductor device comprising a porous film formed above a semiconductor substrate, the porous film having at least one burying concave selected from the group consisting of a trench and a hole, a conductive barrier layer formed on the inner surface of the burying concave, a conductive member buried in the burying concave with the conductive barrier layer interposed between the porous film and the conductive member, and a mixed layer formed between the porous film and the conductive barrier layer, and containing a component of the porous film and a component of the conductive barrier layer.

Abstract: A sliding roof includes a light transmitting sliding sunroof and a light isolating sliding sunshade disposed beneath the sunroof. The light transmitting sliding sunroof opens a roof opening only while the light isolating sliding sunshade is in its open position. Also, the light isolating sliding sunshade closes the roof opening only while the light transmission sliding sunroof is in its closed position. Damage to the light isolating sliding sunshade, therefore, is prevented.

Abstract: Disclosed is a flexible top vehicle with its flexible top so disposed as to open or close both the forward portion and the rearward portion of a roof opening separately. The flexible top is disposed at the roof opening portion and it has a forward slider disposed at its forward end portion and a rearward slider disposed at its rearward end portion, thereby capable of opening the forward and/or rearward portion of the roof opening of the roof by folding or extending the flexible top from or to both end portions thereof. The forward slider is engaged with a forward stopper mounted on a member of the vehicle body, thereby closing the forward portion of the roof opening with the forward end portion of the flexible top, and vice versa. When the flexible top is extended to its maximum length and closes the entire length of the roof opening, the distance between the forward and rearward sliders is set to be smaller than the distance between the forward and rearward stoppers.

Abstract: A slidable roof control device for a motor vehicle wherein a roof panel opening of a motor vehicle is covered with a slidable roof which can be opened both in forward and rearward directions of the vehicle body. The control device includes a first forwardly located ON/OFF command mechanism operable from the driver seat for commanding a drive mechanism to open or close the flexible member, a second rearwardly located ON/OFF command mechanism operable from the rear seat for commanding the drive mechanism to open or close the flexible member, and a control mechanism. The control mechanism is responsive to outputs from the first and second ON/OFF command mechanisms for controlling the activation of the drive mechanism and for restricting the closing motion of the rear portion of the slidable roof as a result of commands from the first ON/OFF command mechanism.

Abstract: A flexible top vehicle or canvas top vehicle is provided with a flexible top or canvas top made of a flexible member so as to cover its roof opening. The flexible top is so disposed as to allow both of its front end and rear end to be transferred forwards or rearwards. The front end of the flexible top is associated with a first driving motor while the rear end thereof is associated with a second driving motor. The first and second driving motors are arranged to be operated by turning a forward-moving switch or a rearward-moving switch on, thereby transferring the flexible top placed in a middle position of the roof opening in a folded state in forward and rearward directions. The flexible top maintains its folded state prior to transfer even after it has been transferred.