Patents by Inventor Seiichiro Kobayashi

Seiichiro Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10381804
    Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: August 13, 2019
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Publication number: 20190194391
    Abstract: The invention provides: a dihydroxynaphthalene condensate which suppresses soft particle generation and is suitably usable for a composition excellent in filterability; and a method for producing the dihydroxynaphthalene condensate, in the method for producing a dihydroxynaphthalene condensate, dihydroxynaphthalene to be used has a sulfur element content of 100 ppm or less in terms of mass among constituent elements. The dihydroxynaphthalene and a condensation agent are condensed in presence of an acid or a base to produce the dihydroxynaphthalene condensate.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke KORI, Seiichiro TACHIBANA, Tsutomu OGIHARA, Satoru KITANO, Yukio ABE, Fumihiro HATAKEYAMA, Taiki KOBAYASHI
  • Publication number: 20190198341
    Abstract: The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu OGIHARA, Daisuke KORI, Seiichiro TACHIBANA, Yusuke BIYAJIMA, Naoki KOBAYASHI, Kazumi NODA
  • Publication number: 20190194102
    Abstract: The invention provides a method for purifying dihydroxynaphthalene, which is capable of suppressing soft particle generation and obtaining dihydroxynaphthalene serving as a raw material of a resin and composition excellent in filterability. The method for purifying dihydroxynaphthalene includes the step of removing a sulfur content in the dihydroxynaphthalene with an adsorbent, and neutral alumina is used as the adsorbent.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Seiichiro TACHIBANA, Daisuke KORI, Tsutomu OGIHARA, Satoru KITANO, Yukio ABE, Fumihiro HATAKEYAMA, Taiki KOBAYASHI
  • Publication number: 20180226771
    Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
    Type: Application
    Filed: February 1, 2018
    Publication date: August 9, 2018
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Patent number: 9972972
    Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: May 15, 2018
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi, Masaru Takizawa, Keisuke Nakata
  • Publication number: 20180115140
    Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.
    Type: Application
    Filed: October 20, 2017
    Publication date: April 26, 2018
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Patent number: 9935427
    Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: April 3, 2018
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Publication number: 20170302057
    Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.
    Type: Application
    Filed: April 17, 2017
    Publication date: October 19, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Publication number: 20170149213
    Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
    Type: Application
    Filed: November 9, 2016
    Publication date: May 25, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI, Masaru TAKIZAWA, Keisuke NAKATA
  • Patent number: 8389309
    Abstract: There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: March 5, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Seiichiro Kobayashi
  • Publication number: 20120220060
    Abstract: There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid.
    Type: Application
    Filed: February 23, 2012
    Publication date: August 30, 2012
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventor: Seiichiro KOBAYASHI
  • Patent number: 7666692
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: February 23, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Junichi Sonoda, Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Patent number: 7642543
    Abstract: A semiconductor light emitting device including: a support substrate; a composite connection layer formed above the support substrate, the composite connection layer including a first connection layer and a second connection layer; a diffusion barrier layer formed above the composite connection layer; a semiconductor lamination structure formed above the diffusion barrier layer; and a reflective electrode layer formed between the diffusion barrier layer and the semiconductor lamination structure, wherein: at least one of the first and second connection layers is made of eutectic material; and the diffusion barrier layer has a lamination structure having TaN layers sandwiching at least one refractory metal layer made of one or more refractory metal materials of Ta, Ti, Mo, W and TiW or alloy thereof. It is possible to prevent defects such as stripping and cracks at bonding planes and improve reliability of a final semiconductor light emitting device.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: January 5, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Publication number: 20080268616
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Application
    Filed: June 25, 2008
    Publication date: October 30, 2008
    Applicant: Stanley Electric Co., Ltd.
    Inventors: Junichi SONODA, Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Patent number: 7439550
    Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.
    Type: Grant
    Filed: March 2, 2006
    Date of Patent: October 21, 2008
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Yuko Tomioka, Seiichiro Kobayashi, Kazuki Takeshima
  • Patent number: 7429754
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Grant
    Filed: August 16, 2005
    Date of Patent: September 30, 2008
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Junichi Sonoda, Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Publication number: 20080169481
    Abstract: A semiconductor light emitting device including: a support substrate; a composite connection layer formed above the support substrate, the composite connection layer including a first connection layer and a second connection layer; a diffusion barrier layer formed above the composite connection layer; a semiconductor lamination structure formed above the diffusion barrier layer; and a reflective electrode layer formed between the diffusion barrier layer and the semiconductor lamination structure, wherein: at least one of the first and second connection layers is made of eutectic material; and the diffusion barrier layer has a lamination structure having TaN layers sandwiching at least one refractory metal layer made of one or more refractory metal materials of Ta, Ti, Mo, W and TiW or alloy thereof. It is possible to prevent defects such as stripping and cracks at bonding planes and improve reliability of a final semiconductor light emitting device.
    Type: Application
    Filed: October 4, 2007
    Publication date: July 17, 2008
    Applicant: Stanley Electric Co., Ltd.
    Inventors: Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Publication number: 20060197099
    Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.
    Type: Application
    Filed: March 2, 2006
    Publication date: September 7, 2006
    Inventors: Yuko Tomioka, Seiichiro Kobayashi, Kazuki Takeshima
  • Publication number: 20060057817
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Application
    Filed: August 16, 2005
    Publication date: March 16, 2006
    Applicant: Stanley Electric Co., Ltd.
    Inventors: Junichi Sonoda, Seiichiro Kobayashi, Kazuyuki Yoshimizu