Patents by Inventor Seiichiro Kobayashi

Seiichiro Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149595
    Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a light-emitting structure layer with a light-emitting layer, and a second multilayer film reflecting mirror. The second multilayer film reflecting mirror constitutes a resonator between the first and second multilayer film reflecting mirrors. The second multilayer film reflecting mirror includes a first multilayer film, an intermediate film, and a second multilayer film. The first and second multilayer films have low refractive index films and high refractive index films that are alternately stacked. The intermediate film covers an upper surface of the first multilayer film and film has a translucency to a light emitted from the light-emitting layer. The second multilayer film partially covers an upper surface of the intermediate film. The intermediate film has a film thickness based on ½ of a wavelength inside the intermediate film of light emitted from the light-emitting layer.
    Type: Application
    Filed: January 20, 2020
    Publication date: May 12, 2022
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI
  • Publication number: 20220140570
    Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror, the light-emitting structure layer including a light-emitting layer; and a second multilayer film reflecting mirror formed on the light-emitting structure layer, the second multilayer film reflecting mirror constituting a resonator between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The light-emitting structure layer has a high resistance region and a low resistance region having an electrical resistance lower than an electrical resistance of the high resistance region. The low resistance region has a plurality of partial regions arranged into a ring shape while being separated by the high resistance region in a plane of the light-emitting structure layer.
    Type: Application
    Filed: February 5, 2020
    Publication date: May 5, 2022
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI
  • Publication number: 20210384706
    Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror on the substrate, a first semiconductor layer on the first multilayer film reflecting mirror, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer. The second semiconductor layer includes a low resistance region and a high resistance region on an upper surface. The high resistance region is depressed from the low resistance region toward the light-emitting layer outside the low resistance region and impurities of the second conductivity type are inactivated in the high resistance region such that the high resistance region has an electrical resistance higher than an electrical resistance of the low resistance region. A light-transmitting electrode layer is in contact with the low resistance region and the high resistance region, and a second multilayer film reflecting mirror is on the light-transmitting electrode layer.
    Type: Application
    Filed: October 7, 2019
    Publication date: December 9, 2021
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI
  • Patent number: 10892601
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 12, 2021
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru Kuramoto, Seiichiro Kobayashi, Tetsuya Takeuchi
  • Publication number: 20190363515
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Application
    Filed: May 22, 2019
    Publication date: November 28, 2019
    Applicants: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI, Tetsuya TAKEUCHI
  • Patent number: 10483721
    Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: November 19, 2019
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Patent number: 10381804
    Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: August 13, 2019
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Publication number: 20180226771
    Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
    Type: Application
    Filed: February 1, 2018
    Publication date: August 9, 2018
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Patent number: 9972972
    Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: May 15, 2018
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi, Masaru Takizawa, Keisuke Nakata
  • Publication number: 20180115140
    Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.
    Type: Application
    Filed: October 20, 2017
    Publication date: April 26, 2018
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Patent number: 9935427
    Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: April 3, 2018
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Publication number: 20170302057
    Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.
    Type: Application
    Filed: April 17, 2017
    Publication date: October 19, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Publication number: 20170149213
    Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
    Type: Application
    Filed: November 9, 2016
    Publication date: May 25, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI, Masaru TAKIZAWA, Keisuke NAKATA
  • Patent number: 8389309
    Abstract: There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: March 5, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Seiichiro Kobayashi
  • Publication number: 20120220060
    Abstract: There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid.
    Type: Application
    Filed: February 23, 2012
    Publication date: August 30, 2012
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventor: Seiichiro KOBAYASHI
  • Patent number: 7666692
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: February 23, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Junichi Sonoda, Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Patent number: 7642543
    Abstract: A semiconductor light emitting device including: a support substrate; a composite connection layer formed above the support substrate, the composite connection layer including a first connection layer and a second connection layer; a diffusion barrier layer formed above the composite connection layer; a semiconductor lamination structure formed above the diffusion barrier layer; and a reflective electrode layer formed between the diffusion barrier layer and the semiconductor lamination structure, wherein: at least one of the first and second connection layers is made of eutectic material; and the diffusion barrier layer has a lamination structure having TaN layers sandwiching at least one refractory metal layer made of one or more refractory metal materials of Ta, Ti, Mo, W and TiW or alloy thereof. It is possible to prevent defects such as stripping and cracks at bonding planes and improve reliability of a final semiconductor light emitting device.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: January 5, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Publication number: 20080268616
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Application
    Filed: June 25, 2008
    Publication date: October 30, 2008
    Applicant: Stanley Electric Co., Ltd.
    Inventors: Junichi SONODA, Seiichiro Kobayashi, Kazuyuki Yoshimizu
  • Patent number: 7439550
    Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.
    Type: Grant
    Filed: March 2, 2006
    Date of Patent: October 21, 2008
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Yuko Tomioka, Seiichiro Kobayashi, Kazuki Takeshima
  • Patent number: 7429754
    Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
    Type: Grant
    Filed: August 16, 2005
    Date of Patent: September 30, 2008
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Junichi Sonoda, Seiichiro Kobayashi, Kazuyuki Yoshimizu