Abstract: During a period in which an electric potential of one node of a holding capacitance shifts from a first electric potential to a second electric potential, the other node of the holding capacitance is in an electrically-floating state.

Abstract: A solid-state imaging device includes a pixel including a photoelectric conversion element, an accumulation unit accumulating charges generated by the photoelectric conversion element, a reset unit resetting the accumulation unit at a voltage of equal to or more than 4.05 V, and an amplifier transistor amplifying and outputting a signal corresponding to amount of accumulated charges, a vertical output line connected to the pixel, a current source circuit including first to third transistors flowing a constant current through the vertical output line, and a voltage setting circuit respectively setting the gate voltages of the first to third transistors to a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the second voltage and lower than the power supply voltage so as to set the drain-source voltage of each of the first to third transistors to equal to or less than 1.75 V.

Abstract: An image capturing apparatus includes a plurality of current sources each including a first transistor, a first switch, a second transistor connected to a vertical signal line via the first switch, and a second switch. The gate of the first transistor is connected to a common connecting line, and the gate of the second transistor is connected to the common connecting line via the second switch.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.

Abstract: During a period in which an electric potential of one node of a holding capacitance shifts from a first electric potential to a second electric potential, the other node of the holding capacitance is in an electrically-floating state.

Abstract: Provided is an imaging apparatus and an imaging system that can suppress high-brightness darkening phenomenon without preventing achievement of high-speed operation. The imaging apparatus includes: pixels each outputting a signal based on photoelectric conversion to each of signal lines; clip units each having a first transistor for clipping the voltage of each of the signal lines; a holding capacitor having a first electrode connected to a control electrode of the first transistor, and having a second electrode; a shift unit configured to supply, to the second electrodes, a plurality of voltages having values different from each other; and a voltage supplying unit provided separately from the shift unit and supplying a first voltage to the second electrodes.

Abstract: In an imaging device including a pixel array in which a plurality of pixels is arranged, each of the pixels including first and second photoelectric conversion units, and a micro lens that collects incident light to the first and second photoelectric conversion units, in a first frame period, a first signal based on a signal electric charge generated in the first photoelectric conversion unit and a second signal based on a signal electric charge generated in at least the second photoelectric conversion unit are read out from a plurality of pixels included in a part of the pixel array, and in a second frame period, a third signal based on the signal electric charges generated in the first and the second photoelectric conversion units is read out from a plurality of pixels included in another part of the pixel array.

Abstract: A solid-state imaging apparatus includes a plurality of pixels, each pixel including: a photoelectric conversion unit; an amplification element; a first signal holding unit and a second signal holding unit arranged on an electric pathway between the photoelectric conversion unit and an input node of the amplification element; a first electric charge transfer unit configured to transfer an electron of the photoelectric conversion unit to the first signal holding unit; and a second electric charge transfer unit configured to transfer an electron held by the first signal holding unit to the second signal holding unit, wherein a voltage supplied to a first control electrode when the electron of the photoelectric conversion unit is transferred to the first signal holding unit is lower than a voltage supplied to a second control electrode when the electron held by the first signal holding unit is transferred to the second signal holding unit.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels, each including a photo-electric converter, are arrayed to form rows and columns; signal lines respectively corresponding to the columns of the pixel array; load transistors respectively corresponding to the signal lines; and capacitances respectively corresponding to the load transistors. Each signal line is connected to the pixels of the corresponding column. Each capacitance includes a first electrode and a second electrode. When viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter, the first electrode is arranged within a region which is surrounded by (i) the adjacent signal lines which are arranged closest to each other, (ii) the pixel array, and (iii) a virtual line connecting end portions of the adjacent signal lines, so as to not overlap the adjacent signal lines.

Abstract: A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.

Abstract: An image sensing apparatus includes a pixel array, a first color filter, a second color filter, and a light shielding portion. The amount of electric charges generated in a first pixel after light of a first wavelength enters the first pixel is larger than that of electric charges generated in a second pixel after light of a second wavelength enters the second pixel. The light shielding portion defines the aperture regions of the first and second pixels so as to set the aperture area of the first pixel larger than that of the second pixel.

Abstract: Provided is a solid-state imaging apparatus comprising signal lines to each of which a signal is outputted from each of pixels, a first holding capacitor for holding the signal outputted from each of the signal lines, first CMOS switches arranged between the signal lines and the first holding lines, each of the first CMOS switches including a first NMOS transistor and a first PMOS transistor, a first control line commonly connected to the gates of the first NMOS transistors of the first CMOS switches, and a second control line commonly connected to the gates of the first PMOS transistors of the first CMOS switches, and signals of different timings are supplied to the first control line and the second control line such that a timing of turning off the first NMOS transistor is shifted from a timing of turning off the first PMOS transistor.

Abstract: A solid-state imaging apparatus includes a plurality of pixels, each pixel including: a photoelectric conversion unit; an amplification element; a first signal holding unit and a second signal holding unit arranged on an electric pathway between the photoelectric conversion unit and an input node of the amplification element; a first electric charge transfer unit configured to transfer an electron of the photoelectric conversion unit to the first signal holding unit; and a second electric charge transfer unit configured to transfer an electron held by the first signal holding unit to the second signal holding unit, wherein a voltage supplied to a first control electrode when the electron of the photoelectric conversion unit is transferred to the first signal holding unit is lower than a voltage supplied to a second control electrode when the electron held by the first signal holding unit is transferred to the second signal holding unit.

Abstract: A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.

Abstract: A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.

Abstract: An apparatus includes a pixel region having disposed therein in a matrix form a plurality of conversion components, an amplifier transistor which amplifies a signal from the plurality of conversion components, a reset transistor which sets the potential of an input portion of the amplifier transistor to a reset potential, and a select transistor which is connected in series to the amplifier transistor and selects and reads the amplified signal, and well contact regions which are provided within the pixel region. Each of the well contact regions is neighboring to a drain region of the reset transistor, and the drain region of the reset transistor has a lower impurity concentration than the impurity concentration in the source and drain regions of the select transistor.

Abstract: An image sensing apparatus includes a pixel array, a first color filter, a second color filter, and a light shielding portion. The amount of electric charges generated in a first pixel after light of a first wavelength enters the first pixel is larger than that of electric charges generated in a second pixel after light of a second wavelength enters the second pixel. The light shielding portion defines the aperture regions of the first and second pixels so as to set the aperture area of the first pixel larger than that of the second pixel.

Abstract: An image sensing apparatus includes a pixel array, a first color filter, a second color filter, and a light shielding portion. The amount of electric charges generated in a first pixel after light of a first wavelength enters the first pixel is larger than that of electric charges generated in a second pixel after light of a second wavelength enters the second pixel. The light shielding portion defines the aperture regions of the first and second pixels so as to set the aperture area of the first pixel larger than that of the second pixel.