Abstract: Provided is a solid-state imaging apparatus comprising signal lines to each of which a signal is outputted from each of pixels, a first holding capacitor for holding the signal outputted from each of the signal lines, first CMOS switches arranged between the signal lines and the first holding lines, each of the first CMOS switches including a first NMOS transistor and a first PMOS transistor, a first control line commonly connected to the gates of the first NMOS transistors of the first CMOS switches, and a second control line commonly connected to the gates of the first PMOS transistors of the first CMOS switches, and signals of different timings are supplied to the first control line and the second control line such that a timing of turning off the first NMOS transistor is shifted from a timing of turning off the first PMOS transistor.

Abstract: A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line.

Abstract: A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line.

Abstract: A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.

Abstract: A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line.

Abstract: An apparatus includes a pixel region having disposed therein in a matrix form a plurality of conversion components, an amplifier transistor which amplifies a signal from the plurality of conversion components, a reset transistor which sets the potential of an input portion of the amplifier transistor to a reset potential, and a select transistor which is connected in series to the amplifier transistor and selects and reads the amplified signal, and well contact regions which are provided within the pixel region. Each of the well contact regions is neighboring to a drain region of the reset transistor, and the drain region of the reset transistor has a lower impurity concentration than the impurity concentration in the source and drain regions of the select transistor.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.

Abstract: A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line.

Abstract: A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the fist block line and the second block line.

Abstract: A solid-state image device including pixels arranged two-dimensionally, the pixels each including a photoelectric converter for converting incident light into an electric signal, is provided. The solid-state image device includes an output amplifier configured to amplify a photoelectric conversion output from each of the pixels, and a reference voltage amplifier configured to output a reference voltage. The solid-state image device selectively outputs the photoelectric conversion output and the reference voltage.

Abstract: An image sensing apparatus includes a pixel array, a first color filter, a second color filter, and a light shielding portion. The amount of electric charges generated in a first pixel after light of a first wavelength enters the first pixel is larger than that of electric charges generated in a second pixel after light of a second wavelength enters the second pixel. The light shielding portion defines the aperture regions of the first and second pixels so as to set the aperture area of the first pixel larger than that of the second pixel.

Abstract: A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the fist block line and the second block line.

Abstract: A solid-state image device including pixels arranged two-dimensionally, the pixels each including a photoelectric converter for converting incident light into an electric signal, is provided. The solid-state image device includes an output amplifier configured to amplify a photoelectric conversion output from each of the pixels, and a reference voltage amplifier configured to output a reference voltage. The solid-state image device selectively outputs the photoelectric conversion output and the reference voltage.