Abstract: Provided is a TFT substrate (substrate); a second electrode (vapor-deposited membrane) that is formed on the TFT substrate and includes a protruding portion; and a sealing membrane provided so as to cover the second electrode, wherein, when ? represents an absolute value of a stress of the sealing membrane, t represents a thickness of the sealing membrane, and P represents a sum of a product of an oblique side length and an oblique side slope in a minute region on an oblique side of the protruding portion, a value of an index N expressed by the expression (N=?·t·P) is less than or equal to 935 MPa·?m2.

Abstract: The present invention includes a frame-shaped sealing material, a filling layer, and a support. The frame-shaped sealing material is provided between a TFT substrate and a counter substrate, and is configured to seal an organic EL element (electroluminescent element) along with the TFT substrate and the counter substrate. The filling layer is composed of a liquid filler, and is filled in the space between the counter substrate, a sealing film, and the sealing material. The support is located inside the sealing material and between the TFT substrate and the counter substrate, and also supports the TFT substrate and the counter substrate.

Abstract: In an organic EL display device that includes a TFT substrate (substrate) and an organic EL element (electroluminescent element) provided on the TFT substrate, a sealing film is provided that seals the organic EL element. The sealing film includes one or more layers of inorganic film. The thickness of a peripheral portion of at least one layer of inorganic film among the one or more layers of inorganic film is made thick. Further, a liquid repellent layer is provided covering the sealing film.

Abstract: An organic EL device includes a TFT substrate 1, a first electrode 5 provided on the TFT substrate 1, an organic EL layer 6 provided on the first electrode 5, a second electrode 7 provided on the organic EL layer 6, and a sealing film 10 covering the second electrode 7. The TFT substrate 1 is provided thereon with upward projections 11 and 12. The upward projections 11 and 12 are covered with the sealing film 10.

Abstract: An organic EL display device 1 that includes a TFT substrate (substrate) 2 and an organic EL element (electroluminescent element) 4 provided on the TFT substrate 2 includes a sealing film 14 that seals the organic EL element 4. The sealing film 14 has a layered structure composed of an organic layer 14b and inorganic layers 14a, 14c. At least a peripheral portion 14b2 of the organic layer 14b has a lower carbon content than a central portion 14b1 of the organic layer 14b.

Abstract: In an organic EL display device (electroluminescence device) including a flexible TFT substrate (substrate), an organic EL element (electroluminescence element) provided on the TFT substrate, and a sealing film that seals the organic EL element, a foldable bend portion is provided. The film thickness of the sealing film is reduced at the bend portion.

Abstract: In an organic EL display device (electroluminescent device) including an organic EL element (electroluminescent element), a sealing film is provided to seal the organic EL element, and a projection (preventing portion) is configured to prevent the sealing film from peeling off and to have an inclined plane forming an obtuse angle with a light emitting surface of the organic EL element. The projection is provided only in a non-light emitting region of the organic EL element.

Abstract: The present invention includes a frame-shaped sealing material, a filling layer, and a support. The frame-shaped sealing material is provided between a TFT substrate and a counter substrate, and is configured to seal an organic EL element (electroluminescent element) along with the TFT substrate and the counter substrate. The filling layer is composed of a liquid filler, and is filled in the space between the counter substrate, a sealing film, and the sealing material. The support is located inside the sealing material and between the TFT substrate and the counter substrate, and also supports the TFT substrate and the counter substrate.

Abstract: Provided is a TFT substrate (substrate); a second electrode (vapor-deposited membrane) that is formed on the TFT substrate and includes a protruding portion; and a sealing membrane provided so as to cover the second electrode, wherein, when a represents an absolute value of a stress of the sealing membrane, t represents a thickness of the sealing membrane, and P represents a sum of a product of an oblique side length and an oblique side slope in a minute region on an oblique side of the protruding portion, a value of an index N expressed by the expression (N=?·t·P) is less than or equal to 935 MPa·?m2.

Abstract: Provided is an organic EL display device (electroluminescence device) including a TFT substrate (substrate) and an organic EL element (electroluminescence element) provided on the TFT substrate, wherein the organic EL display device includes a sealing layer that seals the organic EL element. The sealing layer is provided with a first, a second, and a third sealing film that are sequentially stacked from the organic EL element side, the first and third sealing films and are each formed of an inorganic film, and the second sealing film is formed of an octamethylcyclotetrasiloxane film.

Abstract: In an organic EL display device (electroluminescent device) including an organic EL element (electroluminescent element), a sealing film is provided to seal the organic EL element, and a projection (preventing portion) is configured to prevent the sealing film from peeling off and to have an inclined plane forming an obtuse angle with a light emitting surface of the organic EL element. The projection is provided only in a non-light emitting region of the organic EL element.

Abstract: A hydrogen production system includes: a steam generator heating supplied raw water and generating steam; an electrolytic cell receiving the steam and generating hydrogen and oxygen through a high temperature electrolysis; a cooling unit cooling an unreacted part of the steam in the high temperature electrolysis and changing the unreacted part of the steam into steam condensate; a gas/liquid separator performing gas/liquid separation on the generated hydrogen and the generated steam condensate; a hydrogen compression unit compressing the separated hydrogen and transmitting thermal energy generated when the hydrogen is compressed, to the raw water; and a hydrogen storage unit storing the compressed hydrogen.

Abstract: A hydrogen production system that achieves highly-efficient hydrogen production even when hydrogen is produced by using the plurality of cell stacks is provided. A hydrogen production system includes a plurality of cell stacks provided within a reaction containment, the cell stacks generating hydrogen by high temperature steam electrolysis by supplying steam to the plurality of cell stacks, a first flow path guiding the steam to each of the cell stacks, a second flow path causing a carrier gas containing air as a main component to flow into the reaction containment, and a flow regulation device provided at an inlet of the steam in each of the cell stacks, the flow regulation device regulating a flow rate of the steam caused to flow into each of the cell stacks to be uniform.

Abstract: A hydrogen production system that achieves a highly-efficient hydrogen production operation even when a time-varying electric power source is used is provided. A hydrogen production system includes a capacitor inputting electric power energy from a renewable power supply, and storing electric power, a pulse voltage generation unit generating a pulse voltage having a set amplitude and a set cyclic period by using the electric power stored in the capacitor, and an electrolytic cell applying the generated pulse voltage, and generating hydrogen by high temperature steam electrolysis by using steam supplied into the electrolytic cell.

Abstract: A wafer processing method divides a wafer into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer. The method includes a functional layer removing step of applying a CO2 laser beam to the wafer along each division line with the spot of the CO2 laser beam, having a width corresponding to the width of each division line set on the upper surface of each division line, thereby removing a functional layer along each division line to form a groove along each division line where the functional layer has been removed, and a groove shaping and debris removing step of applying a laser beam having a wavelength in the ultraviolet region to the wafer along each groove, thereby removing debris sticking to the bottom surface of each groove and also shaping the side walls of each groove.

Abstract: A wafer processing method divides a wafer into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer. The method includes a functional layer removing step of applying a CO2 laser beam to the wafer along each division line with the spot of the CO2 laser beam, having a width corresponding to the width of each division line set on the upper surface of each division line, thereby removing a functional layer along each division line to form a groove along each division line where the functional layer has been removed, and a groove shaping and debris removing step of applying a laser beam having a wavelength in the ultraviolet region to the wafer along each groove, thereby removing debris sticking to the bottom surface of each groove and also shaping the side walls of each groove.

Abstract: An electronic component is mounted on a circuit board. The electronic component includes: a lead frame including a fixed portion, a lead portion connected to the fixed portion, and a heat-dissipating portion connected to the fixed portion; a semiconductor chip fixed on the fixed portion by a first binder; and an encapsulation resin for encapsulating the fixed portion, the semiconductor chip, and a base portion of the lead portion. A groove is provided in the fixed portion and the heat-dissipating portion of the lead frame. The groove extends from a portion of the fixed portion where the first binder is present toward the heat-dissipating portion.

Abstract: A semiconductor device includes a semiconductor element and a lead frame. The lead frame includes a first lead, a second lead, a third lead, a fourth lead, and a fifth lead placed parallel to one another. The first and second leads are placed adjoining to each other and constitute a first lead group, and the third and fourth leads are placed adjoining to each other and constitute a second lead group. The spacing between the first lead group and the fifth lead, the spacing between the second lead group and the fifth lead, and the spacing between the first lead group and the second lead group are larger than the spacing between the first lead and the second lead and the spacing between the third lead and the fourth lead.

Abstract: An electronic component is mounted on a circuit board. The electronic component includes: a lead frame including a fixed portion, a lead portion connected to the fixed portion, and a heat-dissipating portion connected to the fixed portion; a semiconductor chip fixed on the fixed portion by a first binder; and an encapsulation resin for encapsulating the fixed portion, the semiconductor chip, and a base portion of the lead portion. A groove is provided in the fixed portion and the heat-dissipating portion of the lead frame. The groove extends from a portion of the fixed portion where the first binder is present toward the heat-dissipating portion.

Abstract: In a semiconductor device bonded to a motherboard with a bonding material having a melting point of 200° C. to 230° C., a bonding material 15 which is a die bonding material for bonding a semiconductor element 13 to a semiconductor substrate 11 is a Bi alloy containing 0.8 wt % to 10 wt % of Cu and 0.02 wt % to 0.2 wt % of Ge, so that the bonding material 15 for bonding the semiconductor element 13 to the semiconductor substrate 11 is not melted when the semiconductor device is bonded to the motherboard by reflowing. It is therefore possible to suppress poor connection on the semiconductor element 13, thereby securing the mountability and electrical reliability of the semiconductor device.