Abstract: The present invention provides a semiconductor device that can suppresses poor connection caused by the variation of the heights of bumps during reflow heating, can be applied to a narrow array pitch, and can freely adjust the heights of the bumps.

Abstract: A semiconductor device includes a semiconductor element and a lead frame. The lead frame includes a first lead, a second lead, a third lead, a fourth lead, and a fifth lead placed parallel to one another. The first and second leads are placed adjoining to each other and constitute a first lead group, and the third and fourth leads are placed adjoining to each other and constitute a second lead group. The spacing between the first lead group and the fifth lead, the spacing between the second lead group and the fifth lead, and the spacing between the first lead group and the second lead group are larger than the spacing between the first lead and the second lead and the spacing between the third lead and the fourth lead.

Abstract: A hydrogen manufacturing apparatus for manufacturing hydrogen by utilizing heat generated in a nuclear plant. The apparatus has a heat exchanger or steam reformer to be brought into contact with cooling water containing tritium produced from the nuclear plant and a tritium permeation suppressing ceramic coating at least either the outer surface or the inner surface of the heat exchanger or steam reformer for suppressing permeation of tritium. Instead of coating with a tritium permeation suppressing ceramic, a structure prepared by combining at least two types of materials having different crystal structures may be used.

Abstract: A center of a substrate having peripheral circuit components mounted thereon is hollowed in a size maintaining a distance for establishing a connection with a semiconductor chip through a conductor such that the semiconductor chip is bonded to a heatsink and the peripheral circuit components are arranged near the semiconductor chip so as to surround the semiconductor chip. Upon adhesion of a conductive paste material, for bonding the substrate to the heatsink having the semiconductor chip mounted thereon in a conductive manner, to a bottom face of the substrate, an adhesive tape is stuck to an edge of the substrate so as to prevent outflow of the conductive paste material, respective terminals are connected through conductors, and both the substrate and the heatsink are sealed with a resin.

Abstract: In a semiconductor device bonded to a motherboard with a bonding material having a melting point of 200° C. to 230° C., a bonding material 15 which is a die bonding material for bonding a semiconductor element 13 to a semiconductor substrate 11 is a Bi alloy containing 0.8 wt % to 10 wt % of Cu and 0.02 wt % to 0.2 wt % of Ge, so that the bonding material 15 for bonding the semiconductor element 13 to the semiconductor substrate 11 is not melted when the semiconductor device is bonded to the motherboard by reflowing. It is therefore possible to suppress poor connection on the semiconductor element 13, thereby securing the mountability and electrical reliability of the semiconductor device.

Abstract: A high temperature steam electrolyzing device has: an electrolyzing cell section that includes a hydrogen electrode and an oxygen electrode arranged at mutually opposite sides of a solid oxide electrolyte operating as intermediate layer and electrolyzes steam to generate hydrogen; fixing flanges for fixing end sections of the solid oxide electrolyte of the electrolyzing cell section; a unit support member for supporting the fixing flanges; fitting flanges arranged at mutually opposite surfaces of the fixing flanges and the unit support member; gaskets made of metal or a mineral-based material and interposed between the fixing flanges and the fitting flanges and between the unit support member and the fitting flanges; and fastening members for separably fastening the fitting flanges.

Abstract: The present invention provides a semiconductor device that can suppresses poor connection caused by the variation of the heights of bumps during reflow heating, can be applied to a narrow array pitch, and can freely adjust the heights of the bumps.

Abstract: To provide a high-temperature steam electrolytic apparatus and method that steam can be used as a common gas between a hydrogen electrode and an oxygen electrode, and the steam can be electrolyzed efficiently while the electrodes of the electrochemical cell are suppressed from oxidative and reductive degradation. A steam electrolytic apparatus 10, comprising an electrochemical cell composed of an electrolyte containing a solid oxide mainly, a hydrogen electrode and an oxygen electrode; a steam supply portion 13 for supplying the electrochemical cell 11 with a gas containing steam as a main component; a hydrogen gas discharge portion 14 for discharging hydrogen generated by the hydrogen electrode by electrolysis of the steam; and an oxygen gas discharge portion 15 for discharging oxygen generated by the oxygen electrode by electrolysis of the steam, wherein the oxygen electrode contains a reduction-resistant material.

Abstract: Variations in fastening positions of semiconductor elements are eliminated by forming protrusions on a die pad so as to enclose the semiconductor elements before an adhesive that fastens the semiconductor elements to the die pad is wetted and spread.

Abstract: A lead frame includes: a die pad for holding a semiconductor chip; a radiator plate extending outward from one side face of the die pad and another side face thereof opposite the one side; a plurality of inner leads arranged opposite respective sides of the die pad other than the sides from which the radiator plate extends so as to interpose the die pad; and a plurality of outer leads formed outside the plurality of inner leads and connected to the inner leads. At least one of the plurality of inner leads serves as a ground lead connected to the die pad. In the radiator plate, an island bonding area of which potential is equal to that of the die pad is formed, a first slit is formed around three sides of the island bonding area, and the other side is connected to the radiator plate through a joint part.

Abstract: It was difficult to acquire a good CO cleanup efficiency in a hydrogen refining apparatus, for instance, when the start-up and stop operations are frequently repeated. A hydrogen refining apparatus, including a shifter having a shifting catalyst body containing noble metals and metal oxides, and a reforming section for supplying hydrogen gas containing carbon monoxide to the shifter, (1) the temperature of an upstream side of the shifting catalyst body relative to the hydrogen gas flow being substantially between 300° C. and 500° C. and (2) the temperature of a downstream side of the shifting catalyst body relative to the hydrogen gas flow being substantially at 300° C. or less.

Abstract: A hydrogen manufacturing apparatus for manufacturing hydrogen by utilizing heat generated in a nuclear plant. The apparatus has a heat exchanger or steam reformer to be brought into contact with cooling water containing tritium produced from the nuclear plant and a tritium permeation suppressing ceramic coating at least either the outer surface or the inner surface of the heat exchanger or steam reformer for suppressing permeation of tritium. Instead of coating with a tritium permeation suppressing ceramic, a structure prepared by combining at least two types of materials having different crystal structures may be used.

Abstract: A center of a substrate having peripheral circuit components mounted thereon is hollowed in a size maintaining a distance for establishing a connection with a semiconductor chip through a conductor such that the semiconductor chip is bonded to a heatsink and the peripheral circuit components are arranged near the semiconductor chip so as to surround the semiconductor chip. Upon adhesion of a conductive paste material, for bonding the substrate to the heatsink having the semiconductor chip mounted thereon in a conductive manner, to a bottom face of the substrate, an adhesive tape is stuck to an edge of the substrate so as to prevent outflow of the conductive paste material, respective terminals are connected through conductors, and both the substrate and the heatsink are sealed with a resin.

Abstract: Conventional hydrogen purification apparatuses cannot be used satisfactorily for applications in which much time is required for startup of the apparatus, and the apparatus is repeatedly started and stopped at frequent intervals because of complicated handling. In a hydrogen purification apparatus comprising at least a catalysis body removing carbon monoxide from a reformed gas containing hydrogen, carbon monoxide and steam, the catalyst body is constituted by a carrier comprised of a complex oxide in which at least one of Mo, W and Re is compounded with Zr, or comprised of an oxide of one of Mo, W, Re and Zr, and at least one of Pt, Pd, Rh and Ru carried on the surface of the carrier.

Abstract: A hydrogen generator including a raw material supplying unit supplying a raw material containing a sulfur component and composed of an organic compound, a water supplying unit supplying water, a reformer producing hydrogen gas, the reformer provided with a reforming catalyst to make the raw material and water undergo a reaction, and a carbon monoxide removing unit reducing the content of carbon monoxide in hydrogen gas produced in the reformer, wherein the reforming catalyst is constituted by a carrier composed of platinum and a metal oxide is provided.

Abstract: An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.

Abstract: A predistortion linearizer has signal dividing circuit dividing an input signal into two signals; signal adjusting circuit using one of the divided signals to execute predetermined adjustment and outputting a signal based on the adjustment; distortion signal generating circuit generating a distortion signal using the signal output from the signal adjusting circuit; signal synthesizing circuit synthesizing the other of the divided signals with the generated distortion signal; and signal amplifying circuit amplifying the synthesized signal and outputting an output signal, and wherein the signal adjusting circuit executes the predetermined adjustment such that there is a predetermined relationship between the level of a difference between the signal amplitudes of predetermined frequency components contained in a distortion signal and the level of a difference between the signal amplitudes of the predetermined frequency components contained in a distortion signal.

Abstract: An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.

Abstract: An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.

Abstract: An amplitude frequency characteristic adjustment circuit 106 is provided downstream of and connected to a distortion generation circuit 105. An amplitude difference between low-frequency-side and high-frequency-side distortion voltages is adjusted by the amplitude frequency characteristic adjustment circuit 106, and then their amplitudes and phases are adjusted by a vector adjustment circuit 107. This configuration makes it possible to suppress simultaneously both of low-frequency-side and high-frequency-side distortion voltages of a distortion generated by a wide-band class-AB power amplifier even if they are different in amplitude and phase.