Patents by Inventor Seiji Inaoka
Seiji Inaoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10647950Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: GrantFiled: March 31, 2016Date of Patent: May 12, 2020Assignee: VERSUM MATERIALS US, LLCInventors: Seiji Inaoka, William Jack Casteel, Jr., Wen Dar Liu
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Patent number: 10332784Abstract: Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH <4, preferably <3, more preferably <2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants.Type: GrantFiled: March 22, 2016Date of Patent: June 25, 2019Assignee: VERSUM MATERIALS US, LLCInventors: William Jack Casteel, Jr., Seiji Inaoka, Wen Dar Liu, Tianniu Chen
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Patent number: 10301580Abstract: A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R?NH2, wherein R? is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer species; optionally, a fluoride ion source; and optionally, a metal chelating agent.Type: GrantFiled: December 21, 2015Date of Patent: May 28, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, Tianniu Chen, William Jack Casteel, Jr., Seiji Inaoka, Gene Everad Parris
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Patent number: 10233413Abstract: A composition useful for removing residue from a semiconductor substrate comprising in effective cleaning amounts: from about 55 to 80% by weight of water; from about 0.3 to about 5.0% by weight of EDTA; from about 10.0 to about 30.0% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0.1 to about 5.0% by weight of a polyfunctional organic acid; from about 0.01 to about 8.0% by weight of a fluoride ion source; from about 0 to about 60% by weight of a water-miscible organic solvent; and from about 0 to about 15% by weight of a corrosion inhibitor.Type: GrantFiled: September 13, 2016Date of Patent: March 19, 2019Assignee: VERSUM MATERIALS US, LLCInventor: Seiji Inaoka
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Patent number: 9976037Abstract: Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.Type: GrantFiled: March 29, 2016Date of Patent: May 22, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Seiji Inaoka, William Jack Casteel, Jr., Raymond Nicholas Vrtis, Kathleen Esther Theodorou, Tianniu Chen, Mark Richard Brown
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Patent number: 9957469Abstract: There are provided metal corrosion inhibition cleaning compositions, methods and system for copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al). The metal corrosion inhibition cleaning compositions provide corrosion inhibition effects by use a combination of two chemicals—at least one multi-functional amine that has more than one amino groups; and at least one multi-functional acid that has more than one carboxylate groups. The metal corrosion inhibition cleaning compositions are effective for cleaning the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after chemical mechanical polishing (CMP).Type: GrantFiled: July 2, 2015Date of Patent: May 1, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Seiji Inaoka, Yi-Chia Lee, Agnes Derecskei-Kovacs
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Publication number: 20180105774Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned micro-electronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: ApplicationFiled: March 31, 2016Publication date: April 19, 2018Inventors: Seiji INAOKA, William Jack CASTEEL, Jr., Wen Dar LIU
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Publication number: 20170081622Abstract: A composition useful for removing residue from a semiconductor substrate comprising in effective cleaning amounts: from about 55 to 80% by weight of water; from about 0.3 to about 5.0% by weight of EDTA; from about 10.0 to about 30.0% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0.1 to about 5.0% by weight of a polyfunctional organic acid; from about 0.01 to about 8.0% by weight of a fluoride ion source; from about 0 to about 60% by weight of a water-miscible organic solvent; and from about 0 to about 15% by weight of a corrosion inhibitor.Type: ApplicationFiled: September 13, 2016Publication date: March 23, 2017Applicant: Air Products and Chemicals, Inc.Inventor: Seiji Inaoka
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Patent number: 9536730Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: GrantFiled: August 27, 2013Date of Patent: January 3, 2017Assignee: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Yi Chia Lee, Madhukar Bhaskara Rao, Gautam Banerjee, Wen Dar Liu, Aiping Wu, Seiji Inaoka
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Patent number: 9472420Abstract: Aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing titanium nitride (TiN or TiNxOy) etch residue.Type: GrantFiled: November 19, 2014Date of Patent: October 18, 2016Assignee: Air Products and Chemicals, Inc.Inventors: William Jack Casteel, Jr., Seiji Inaoka, Madhukar Bhaskara Rao, Brenda Faye Ross, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen
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Publication number: 20160289455Abstract: Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.Type: ApplicationFiled: March 29, 2016Publication date: October 6, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Seiji Inaoka, William Jack Casteel, JR., Raymond Nicholas Vrtis, Kathleen Esther Theodorou, Tianniu Chen, Mark Richard Brown
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Publication number: 20160293479Abstract: Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH <4, preferably <3, more preferably <2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants.Type: ApplicationFiled: March 22, 2016Publication date: October 6, 2016Applicant: Air Products and Chemicals, Inc.Inventors: William Jack Casteel, JR., Seiji Inaoka, Wen Dar Liu, Tianniu Chen
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Publication number: 20160186105Abstract: A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R?NH2, wherein R? is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer speicies; optionally, a fluoride ion source; and optionally, a metal chelating agent.Type: ApplicationFiled: December 21, 2015Publication date: June 30, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Wen Dar Liu, Yi-Chia Lee, Tianniu Chen, William Jack Casteel, JR., Seiji Inaoka, Gene Everad Parris
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Publication number: 20160010035Abstract: There are provided metal corrosion inhibition cleaning compositions, methods and system for copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al). The metal corrosion inhibition cleaning compositions provide corrosion inhibition effects by use a combination of two chemicals—at least one multi-functional amine that has more than one amino groups; and at least one multi-functional acid that has more than one carboxylate groups. The metal corrosion inhibition cleaning compositions are effective for cleaning the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after chemical mechanical polishing (CMP).Type: ApplicationFiled: July 2, 2015Publication date: January 14, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Wen Dar Liu, Seiji Inaoka, Yi-Chia Lee, Agnes Derecskei-Kovacs
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Patent number: 9222018Abstract: Formulations for stripping titanium nitride (TiN or TiNxOy; x=0 to 1.3 and y=0 to 2) hard mask and removing titanium nitride etch residue are low pH (<4) comprise a weakly coordinating anion having negative charge highly dispersed throughout its structure, amine salt buffer, a non-oxidizing trace metal ion, a non-ambient trace oxidizer, and the remaining being solvent selected from the group consisting of water, sulfolane, dimethyl sulfide, lactic acid, glycol, and mixtures thereof. The formulations contain no hydrogen peroxide, and are exposed to air. Bifluoride, corrosion inhibitors, surfactants may be added to the formulations. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.Type: GrantFiled: March 10, 2015Date of Patent: December 29, 2015Assignee: Air Products and Chemicals, Inc.Inventors: William Jack Casteel, Jr., Seiji Inaoka, Wen Dar Liu, Tianniu Chen
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Publication number: 20150175943Abstract: Aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing titanium nitride(TiN or TiNxOy) etch residue.Type: ApplicationFiled: November 19, 2014Publication date: June 25, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: William Jack Casteel, JR., Seiji Inaoka, Madhukar Bhaskara Rao, Brenda Faye Ross, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen
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Publication number: 20140109931Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: ApplicationFiled: August 27, 2013Publication date: April 24, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Yi Chia Lee, Madhukar Bhaskara Rao, Gautam Banerjee, Wen Dar Liu, Aiping Wu, Seiji Inaoka
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Patent number: 8338350Abstract: A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water.Type: GrantFiled: October 22, 2009Date of Patent: December 25, 2012Assignee: Avantor Performance Materials Inc.Inventor: Seiji Inaoka
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Publication number: 20110212865Abstract: A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water.Type: ApplicationFiled: October 22, 2009Publication date: September 1, 2011Inventor: Seiji Inaoka
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Publication number: 20110207645Abstract: Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone.Type: ApplicationFiled: April 27, 2011Publication date: August 25, 2011Inventor: Seiji INAOKA