Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

Abstract: Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard.

Abstract: An elastic wave device includes a support substrate, a film stack including a piezoelectric thin film, and an IDT electrode. The film stack is partially absent in a region outside a region where the IDT electrode is located in plan view. The elastic wave device further includes a support layer located on the support substrate in at least a portion of a region where the film stack is partially absent and surrounds a region where the film stack is located in plan view and a cover member located on the support layer. The cover member defines a hollow space facing the IDT electrode together with the piezoelectric thin film and the support layer.

Abstract: A surface acoustic wave device assembly includes a collective board, first circuit portions provided on the collective board and respectively including first hot terminals and first ground terminals, a second circuit portion provided on the collective board and including second hot terminals and second ground terminals, and a power supply wiring provided on the collective board so as to surround the periphery of the first circuit portions and the second circuit portion. The first circuit portions include surface acoustic wave devices defining band pass filters. The second circuit portion defines a band pass filter. The first ground terminals and first hot terminals, and the second ground terminal are connected to the power supply wiring, the second hot terminals are not connected to the power supply wiring, and pass bands of the surface acoustic wave devices and a pass band of the band pass filter defined by the second circuit portion are the same or substantially the same.

Abstract: An elastic wave device manufacturing method includes a preparing a piezoelectric wafer on which IDT electrodes are provided in elastic wave device forming portions, providing on a first main surface of the piezoelectric wafer support layers in the elastic wave device forming portions, bonding a cover member to cover the support layers to obtain a multilayer body, cutting the multilayer body in a first direction multiple times, cutting the multilayer body in a second direction orthogonal to the first direction to obtain elastic wave devices, in which a resin layer extends across a boundary between the elastic wave device forming portions adjacent to each other on the first main surface of the piezoelectric wafer, and the second cutting step is performed in a state in which the resin layer is present.

Abstract: Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard.

Abstract: In a surface acoustic wave device, a conductor pattern is located on a main surface of a piezoelectric substrate and includes a surface acoustic wave element pattern, a pad and a feed line that is electrically connected to the pad and extends up to an outer peripheral edge of the main surface. The piezoelectric substrate and a cover are bonded to each other with a support layer therebetween that includes a frame extending along the outer peripheral edge of the main surface so that a gap is provided between the frame and the outer peripheral edge and includes a pad adjacent portion on the pad. Thus, a closed space is surrounded by the piezoelectric substrate, the cover and the frame. The support layer further includes a reinforcement portion that intersects a feed line at or near an intersection portion in which a separated portion of the frame that is separated from the pad adjacent portion intersects the feed line.

Abstract: Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard.

Abstract: In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.

Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 ?m and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

Abstract: An elastic wave device includes a support substrate and a laminated film disposed on the support substrate. A portion of the laminated film is removed in a region outside a region in which an interdigital transducer electrode is disposed and below a region to which an external connection terminal is joined. An insulating layer is disposed in at least a portion of the region in which the portion of the laminated film is removed. A support layer is disposed on the insulating layer so as to surround the region in which the interdigital transducer electrode is disposed. A main component of a material of which the support layer is made is about 50% or more identical to a main component of a material of which the insulating layer is made. A cover is secured to the support layer to seal a cavity defined by the support layer.

Abstract: An elastic wave device includes a multilayer film stacked on a support substrate. A first support layer surrounds a region including interdigital transducer electrodes. A second support layer is disposed in the region surrounded by the first support layer. A cover is fixed on the first support layer and the second support layer so as to close a cavity defined by the first support layer. The multilayer film is partially disposed on the support substrate, and an insulating layer is disposed in at least a portion of a region in which the multilayer film is not disposed. At least one of the first support layer and the second support layer is disposed on the insulating layer.

Abstract: An elastic wave device includes a piezoelectric thin film provided on a low acoustic velocity film and an IDT electrode provided on the piezoelectric thin film, wherein the piezoelectric thin film is made of a piezoelectric single crystal and includes a first principal surface that is a positive surface in a polarization axis direction and a second principal surface that is a negative surface in the polarization axis direction. The first principal surface of the piezoelectric thin film faces the low acoustic velocity film, and the second principal surface faces the IDT electrode.

Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

Abstract: An elastic wave device includes a support substrate, a film stack including a piezoelectric thin film, and an IDT electrode. The film stack is partially absent in a region outside a region where the IDT electrode is located in plan view. The elastic wave device further includes a support layer located on the support substrate in at least a portion of a region where the film stack is partially absent and surrounds a region where the film stack is located in plan view and a cover member located on the support layer. The cover member defines a hollow space facing the IDT electrode together with the piezoelectric thin film and the support layer.

Abstract: In an elastic wave device, a plurality of elastic wave elements that include IDT electrodes are provided on a piezoelectric substrate, and a support layer that surrounds the elastic wave elements is provided on the piezoelectric substrate to define hollow portions in which the elastic wave elements are located. A cover member is stacked on the support layer, so that the hollow portions, in which the elastic wave elements are located, are provided, and the support layer includes a first support layer and a second support layer. The first support layer extends along an outer peripheral edge of the piezoelectric substrate, and the second support layer is located in a region surrounded by the first support layer and disposed around the elastic wave elements so as to have the hollow portions, in which the elastic wave elements are located. A hollow path is provided between the first support layer and the second support layer and arranged to allow communication between at least two of the hollow portions.

Abstract: A surface acoustic wave device assembly includes a collective board, first circuit portions provided on the collective board and respectively including first hot terminals and first ground terminals, a second circuit portion provided on the collective board and including second hot terminals and second ground terminals, and a power supply wiring provided on the collective board so as to surround the periphery of the first circuit portions and the second circuit portion. The first circuit portions include surface acoustic wave devices defining band pass filters. The second circuit portion defines a band pass filter. The first ground terminals and first hot terminals, and the second ground terminal are connected to the power supply wiring, the second hot terminals are not connected to the power supply wiring, and pass bands of the surface acoustic wave devices and a pass band of the band pass filter defined by the second circuit portion are the same or substantially the same.

Abstract: An elastic wave device includes a piezoelectric substrate, functional electrodes on the piezoelectric substrate, a support layer on the piezoelectric substrate with a frame shape surrounding the functional electrodes, a cover member on the support layer to seal an opening of the support layer, the cover member including a first main surface facing the support layer, and a second main surface opposite to the first main surface. Recesses are located in the cover member and are open to the second main surface. Via holes extend through the support layer and to bottom surfaces of the recesses of the cover member, the via holes each including an opening that is open to the bottom surface. The area of the opening of each of the via holes is not more than the area of the bottom surface of the corresponding recess of the cover member. First via conductor portions are provided in the via holes and second via conductor portions are provided in the recesses of the cover member.

Abstract: An elastic wave device includes a support substrate and a laminated film disposed on the support substrate. A portion of the laminated film is removed in a region outside a region in which an interdigital transducer electrode is disposed and below a region to which an external connection terminal is joined. An insulating layer is disposed in at least a portion of the region in which the portion of the laminated film is removed. A support layer is disposed on the insulating layer so as to surround the region in which the interdigital transducer electrode is disposed. A main component of a material of which the support layer is made is about 50% or more identical to a main component of a material of which the insulating layer is made. A cover is secured to the support layer to seal a cavity defined by the support layer.

Abstract: In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.