Patents by Inventor Seiji Kai

Seiji Kai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060151773
    Abstract: A solid-state imager is disclosed wherein isolation regions (4) are covered with power supply lines (8), a light-transmitting lens film (24) whose surface forms continuous convex portions above the isolation regions (4) convex towards channel regions (5) is provided, and a light-transmitting material having a refractive index lower than that of the lens film (24) is provided over the lens film (24).
    Type: Application
    Filed: April 16, 2004
    Publication date: July 13, 2006
    Inventors: Seiji Kai, Ryouji Matsui, Tetsuya Yamada, Tsutomu Imai, Kazuyuki Takegawa
  • Publication number: 20060103941
    Abstract: In order to efficiently form microlenses wide in light receiving surfaces, microlenses are manufactured according to the following process. A first light transmitting film on which columnar projections are formed with a predetermined interval is formed on a semiconductor substrate. A second light transmitting film made of a material same as that of the first light transmitting film is laminated on a surface of the first light transmitting film, and a planar shape of the projection is enlarged to make a separation between the projections narrower. Argon ions are irradiated onto the second light transmitting film to round off a corner of the second light transmitting film, and thereby a lens is formed.
    Type: Application
    Filed: November 15, 2005
    Publication date: May 18, 2006
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Keiichi Yamaguchi, Seiji Kai
  • Patent number: 6995915
    Abstract: The present invention intends to provide a manufacturing method of a heat resistant micro-lens. The manufacturing method includes forming on a substrate an inorganic film having the optical transparency; forming, at positions that are on the inorganic film and correspond to lens formation positions, a resist films; etching a portion where the resist films are not formed of the inorganic film; removing the resist films that remain; and irradiating inert gas ions to the inorganic film from which the resist films are removed and that is patterned according to the etching.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: February 7, 2006
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Kazuyuki Takegawa, Ryoji Matsui, Tetsuya Yamada, Tsutomu Imai, Seiji Kai, Yuko Tanaka
  • Publication number: 20050161709
    Abstract: A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t1, of the insulation film, thickness, t2, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S<(2t1+2t2).
    Type: Application
    Filed: January 21, 2005
    Publication date: July 28, 2005
    Inventors: Tetsuya Miwa, Tsutomu Imai, Seiji Kai, Takayuki Kaida
  • Publication number: 20050099695
    Abstract: The present invention intends to provide a manufacturing method of a heat resistant micro-lens. The manufacturing method includes forming on a substrate an inorganic film having the optical transparency; forming, at positions that are on the inorganic film and correspond to lens formation positions, a resist films; etching a portion where the resist films are not formed of the inorganic film; removing the resist films that remain; and irradiating inert gas ions to the inorganic film from which the resist films are removed and that is patterned according to the etching.
    Type: Application
    Filed: November 4, 2004
    Publication date: May 12, 2005
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Kazuyuki Takegawa, Ryoji Matsui, Tetsuya Yamada, Tsutomu Imai, Seiji Kai, Yuko Tanaka
  • Publication number: 20050042550
    Abstract: The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.
    Type: Application
    Filed: August 5, 2004
    Publication date: February 24, 2005
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Isamu Tomizawa, Seiji Kai, Kouji Yagi
  • Patent number: 6785441
    Abstract: An optical fiber collimator having a lens (10), and an optical fiber chip (14) disposed at a distance from the lens, the optical fiber chip holding an end portion of an optical fiber (12) and having an end surface treated to be inclined. The optical axis of the optical fiber is made eccentric with respect to the center of the lens to set the eccentric quantity of the optical fiber so that the center of the lens substantially coincides with the center of a light beam incident on the lens. The kind of the lens is optional. The lens may be an inexpensive spherical lens or may be a gradient index rod lens. When a gradient index rod lens is used, a lens in which a surface facing to the optical fiber chip is treated to be inclined is used as the gradient index rod lens.
    Type: Grant
    Filed: December 26, 2001
    Date of Patent: August 31, 2004
    Assignee: Nippon Sheet Glass Co., Ltd.
    Inventors: Ikuto Ooyama, Takashi Fukuzawa, Seiji Kai
  • Publication number: 20020094163
    Abstract: An optical fiber collimator having a lens (10), and an optical fiber chip (14) disposed at a distance from the lens, the optical fiber chip holding an end portion of an optical fiber (12) and having an end surface treated to be inclined. The optical axis of the optical fiber is made eccentric with respect to the center of the lens to set the eccentric quantity of the optical fiber so that the center of the lens substantially coincides with the center of a light beam incident on the lens. The kind of the lens is optional. The lens may be an inexpensive spherical lens or may be a gradient index rod lens. When a gradient index rod lens is used, a lens in which a surface facing to the optical fiber chip is treated to be inclined is used as the gradient index rod lens.
    Type: Application
    Filed: December 26, 2001
    Publication date: July 18, 2002
    Inventors: Ikuto Ooyama, Takashi Fukuzawa, Seiji Kai
  • Patent number: 5949106
    Abstract: A power FET for which it is difficult to generate oscillations dependent on the interval between adjacent pads. The power FET has a plurality of pads for first terminals, which are disposed on one side of a chip at unequal intervals, and a plurality of pads for second terminals, which are placed on the other side of the chip. Alternatively, or in addition, the plurality of pads for the second terminals may also be disposed at unequal intervals.
    Type: Grant
    Filed: July 8, 1997
    Date of Patent: September 7, 1999
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Seiji Kai, Yoshihiro Yamamoto, Masaaki Itoh, Koutarou Tanaka
  • Patent number: 5886372
    Abstract: It is an object of the present invention to provide a semiconductor device that is able to have the same Vp in all FETs formed on one chip.A semiconductor device of the present invention comprises a semiconductor substrate having a first region and a second region on a main surface; a first field effect transistor formed on the first region of the main surface, the first field effect transistor having first gates arranged in a plurality of rows and having a first total gate width, the first gates respectively establishing a first gate length and a first gate width; and a second field effect transistor formed on the second region of the main surface, the second field effect transistor having second gates arranged a plurality of rows and having a second total gate width smaller than the first total gate width, the second gates respectively establishing a second gate length substantially the same as the first gate length and a second gate width substantially the same as the first gate width.
    Type: Grant
    Filed: July 7, 1997
    Date of Patent: March 23, 1999
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Seiji Kai, Yoshihiro Yamamoto, Masaaki Itoh, Koutarou Tanaka