Abstract: A method for enhancing the transfection efficiency of naked plasmid DNA in treating and/or preventing angiogenesis-dependent symptoms is provided by the present inventions. According to the present method, a suitable naked plasmid DNA is subjected for intramuscular injection under increased pressure inside the muscle or hyperbaric oxygen. Angiogenesis-dependent symptoms, including wounds, inflammatory diseases, critical limb ischemia, ischemic heart diseases, cerebral infarction, diabetic neuropathy, spinal canal stenosis, etc., may be treated by the present methods.

Abstract: A throttle valve for adjusting an amount of intake air to an internal combustion engine includes throttle shafts disposed in an intake air passage perpendicularly across the longitudinal axis of the air passage, and first and second valve members mounted on the throttle shafts for opening/closing about the throttle shafts independently of each other. By these first and second valve members, there are formed main air passages for causing air to flow in the intake air passage along the longitudinal axis of the intake air passage toward the internal combustion engine and auxiliary intake air passages for causing air to flow in the intake air passage substantially perpendicularly across the longitudinal axis of the air passage.

Abstract: A tableware washing apparatus is adapted to allow garbage deposited to tableware to be washed off by washing water injected toward the inside of a shower sink, and the garbage dropped into the inside of the shower sink to be washed out with the washing water. A cross-sectional shape of the shower sink includes a bottom wall having a large curvature, a first sidewall rising substantially vertically from one of opposite ends of the bottom wall, and a second sidewall rising from the other end of the bottom wall and having a curvature smaller than that of the bottom wall. A sectional area of a flow path at the bottom wall is small, as compared with a shower sink having a quadrilateral section or a circular section. Therefore, even if the flow rate of the washing water is reduced to save water, the flow speed of the washing water flowing on the bottom wall can be raised to effectively wash out the garbage.

Abstract: A multi-bus semiconductor device and a method of its probing test perform the DC test for individual pads of a device while dealing with an adequate number of devices for simultaneous measurement based on the scheme of input/output pad number compressive test. The semiconductor device includes switch elements SW0-SW4 connected between input/output pads P0-P4 and a testing line L0 so that pads in an arbitrary combination, among the off-probe pads P1-P4 that are not made in contact with the tester probe Pr0, are selected for testing in correspondence to the combination of switch elements that are turned on. The input/output buffers of the pads under test are deactivated to block their internal current paths. The corresponding switch elements are turned on to connect the off-probe pads under test to the probe pad P0 that is made in contact with the tester probe Pr0, and the leak current of the probes is measured with the tester TS.

Abstract: A multi-bus semiconductor device and a method of its probing test perform the DC test for individual pads of a device while dealing with an adequate number of devices for simultaneous measurement based on the scheme of input/output pad number compressive test. The semiconductor device includes switch elements SW0-SW4 connected between input/output pads P0-P4 and a testing line L0 so that pads in an arbitrary combination, among the off-probe pads P1-P4 that are not made in contact with the tester probe Pr0, are selected for testing in correspondence to the combination of switch elements that are turned on. The input/output buffers of the pads under test are deactivated to block their internal current paths. The corresponding switch elements are turned on to connect the off-probe pads under test to the probe pad P0 that is made in contact with the tester probe Pr0, and the leak current of the probes is measured with the tester TS.

Abstract: A separator for a fuel cell, having a film on the surface, wherein the film has a water-holdability of 0.3 to 5.0 g per g of the film, or the film has a pore volume of 0.5 to 0.9 cc per cc of the film, and a thickness of 0.5 to 300 ?m. The fuel cell separator is superior in hydrophilicity and water-holding property, and has at the same time low electrical resistance.

Abstract: A fuel tank for an automobile includes a pair of containers formed by drawing a metal plate. Each container has an opening and a flange formed along an edge of the opening. A side wall of the container has a concavo-convex portion shaped to correspond to a component adjacent to the fuel tank. Each flange is formed into a curved configuration conforming to the concavo-convex portion. The flanges are superposed and welded to each other by laser beam welding.

Abstract: A fuel inlet comprises an inlet pipe, a breather tube, a retainer, a spiral groove, and the like. The inlet pipe is formed by processing a metal pipe and has an expanded portion, a taper portion, and a main body in the order from the fuel port. The expanded portion is formed by increasing the diameter by bulging. In order to prevent defects in the pipe such as cracks from being caused during bulging, SUS304, SUS304L, or SUS436 according to JIS is used as the material of the pipe. The diameter of the main body is 25.4 mm and the diameter of the expanded portion is 50 mm. A spiral groove on which a screw-type fuel port cap can be screwed is formed in the vicinity of the open end of the expanded portion, by crimping the inlet pipe and the retainer together. On the outer surface of the expanded portion in the vicinity of the open end is provided an outer-cylinder-like flange formed integrally with the inlet pipe.

Abstract: In order to provide an etching method for silicone oxide film by fluorocarbon plasma in semiconductor production, which is superior in precise manufacturing and highly selective to resist and silicone nitride film, two kinds of electronic temperature regions are generated in plasma, and a generation ratio of CF2/F is controlled independently from a generation amount of ions by making areas of these two electronic temperature regions variable with a magnetic field gradient and a distance between a wafer and a wafer facing plane.

Abstract: A tableware washing apparatus is adapted to allow garbage deposited to tableware to be washed off by washing water injected toward the inside of a shower sink, and the garbage dropped into the inside of the shower sink to be washed out with the washing water. A cross-sectional shape of the shower sink includes a bottom wall having a large curvature, a first sidewall rising substantially vertically from one of opposite ends of the bottom wall, and a second sidewall rising from the other end of the bottom wall and having a curvature smaller than that of the bottom wall. A sectional area of a flow path at the bottom wall is small, as compared with a shower sink having a quadrilateral section or a circular section. Therefore, even if the flow rate of the washing water is reduced to save water, the flow speed of the washing water flowing on the bottom wall can be raised to effectively wash out the garbage.

Abstract: A semiconductor integrated circuit includes a filter and a time-constant detecting circuit. The filter includes resistance elements; capacitance elements, each of which consists of a capacitance-value switching circuit that can vary the capacitance of the capacitance elements and operational amplifiers. The time-constant detecting circuit detects the time constant of the capacitance element and resistance element, which are formed independently of the capacitance elements and resistance elements of the filter. The semiconductor integrated circuit varies the capacitance of the capacitance element in response to the detected time constant to prevent a reduction in the yield by adjusting the cut-off frequency of the filter in spite of variations in manufacturing the resistance elements and capacitance elements of the filter.

Abstract: A multi-bus semiconductor device and a method of its probing test perform the DC test for individual pads of a device while dealing with an adequate number of devices for simultaneous measurement based on the scheme of input/output pad number compressive test. The semiconductor device includes switch elements SW0-SW4 connected between input/output pads P0-P4 and a testing line L0 so that pads in an arbitrary combination, among the off-probe pads P1-P4 that are not made in contact with the tester probe Pr0, are selected for testing in correspondence to the combination of switch elements that are turned on. The input/output buffers of the pads under test are deactivated to block their internal current paths. The corresponding switch elements are turned on to connect the off-probe pads under test to the probe pad P0 that is made in contact with the tester probe Pr0, and the leak current of the probes is measured with the tester TS.

Abstract: In a method of reducing corrosion of a metal material, a substance such as semiconductor for generating an electric current by thermal excitation is coated or adhered on a metal material surface, to be exposed to a water having a high temperature of 150° C. or more, of a boiler and ducts or pipes, to which hot water heated by the boiler contacts, of a thermal electric power plant or a nuclear reactor structural material or ducts or pipes surrounding the reactor in a nuclear power plant.

Abstract: A filter-equipped semiconductor integrated circuit includes a filter and a time-constant detecting circuit. The filter includes resistance elements; capacitance elements, each of which consists of a capacitance-value switching circuit that can vary the capacitance value of the capacitance element; and operational amplifiers. The time-constant detecting circuit detects the time constant of the capacitance element and resistance element, which are formed independently of the capacitance elements and resistance elements of the filter. The filter-equipped semiconductor integrated circuit varies the capacitance value of the capacitance element in response to the detected time constant so as to prevent the reduction in the yield by adjusting the cut-off frequency of the filter in spite of the manufacturing variations in the resistance elements and capacitance elements of the filter.

Abstract: A method of manufacturing a fuel inlet having an improved anti-rust property. As material for an inlet pipe 2 and a breather tube 4, stainless pipes are used. A pipe expanding process in which an end portion of the inlet pipe 2 is enlarged in diameter to form a filling part 6, a screw-thread forming process in which a helical groove 12 is formed on a periphery of the filling part 6, a welding process in which the breather tube 4 is welded to the inlet pipe 2, and a coating process in which a cationic electrodeposition coating is applied to a fuel inlet 1 after the welding process are performed in turn, thereby obtaining the fuel inlet 1 having an improved anti-rust property.

Abstract: In a semiconductor substrate, at least one diffusion region exists between resistors on an element isolation layer, and the resistors and the diffusion regions are arranged such that all distances between the respective resistors and the diffusion regions around the corresponding resistors are equal.

Abstract: The present invention provides a dry chemical-mechanical polishing method to perform etching in efficient manner. The dry chemical-mechanical polishing method comprises the steps of bringing surface of a polishing specimen retained on a specimen stand 114 into contact with a polishing tool while supplying plasma 106 from a plasma source, moving relative positions of the polishing specimen and the polishing tool and then polishing, and planarizing the surface of the polishing specimen, whereby diameter of the polishing specimen is increased to larger than diameter of the polishing tool, for instance, so that at least a part of the surface of the polishing specimen is exposed to an atmosphere of the plasma during polishing operation.

Abstract: At least one diffusion region exists between a plurality of resistors formed on an element isolation layer, and the plurality of resistors and the diffusion regions are arranged such that all distances between the respective resistors and the diffusion regions around the corresponding resistors are equal to each other.

Abstract: In forming a fuel inlet pipe FP, (1) a portion of a base pipe is expanded by use of an expander punch to form a processed pipe comprising a neck portion, of which the diameter is the same as that of the base pipe, a tapering portion, and an expanded portion, all of these portions being connected in coaxial relation to one another (coaxially expanding process); and (2) a central axis of the neck portion and a central axis of the expanded portion are decentered relative to each other, and the expanded portion of the processed pipe is further expanded by use of an expander punch having a diameter larger than that of the expander punch used in the coaxially expanding process, thereby forming the fuel inlet pipe FP (eccentrically expanding process). The coaxially expanding process is performed one time or a plurality of times, while the eccentrically expanding process is performed only one time.

Abstract: A separator for fuel cell, comprising