Abstract: A wafer placement table includes: a ceramic substrate that has a wafer placement surface at an upper surface of the ceramic substrate; an electrode that is incorporated in the ceramic substrate; and an electrically conductive electrode extraction portion that is incorporated in the ceramic substrate and is electrically connected to the electrode. A volume content percentage of a ceramic material that is identical to a main component of the ceramic substrate is high in the electrode extraction portion compared with the electrode.

Abstract: A member for semiconductor manufacturing apparatus includes a central ceramic member having a wafer placement surface on an upper surface; an annular outer circumferential ceramic member having a focus ring placement surface on an upper surface; and a conductive base member having a central support joined to the central ceramic member, and an outer circumferential support joined to the outer circumferential ceramic member, wherein an outer circumferential surface of the central ceramic member and an inner circumferential surface of the outer circumferential ceramic member each change in diameter in an up-down direction, and a maximum diameter of the outer circumferential surface of the central ceramic member is smaller than a maximum diameter of the inner circumferential surface of the outer circumferential ceramic member, and larger than a minimum diameter of the inner circumferential surface of the outer circumferential ceramic member, and the central ceramic member is insulating ceramics.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface, an electrostatic electrode embedded in the ceramic plate, an electrode lead-out portion embedded in the ceramic plate and extending downward from the electrostatic electrode, a terminal hole extending from a lower surface of the ceramic plate to the electrode lead-out portion, a terminal in the terminal hole, a conductive bonding portion located between the terminal and the electrode lead-out portion and bonding the terminal and the electrode lead-out portion together. The terminal hole has a terminal hole tapering surface that tapers toward a bottom of the hole, and the terminal hole tapering surface intersects a lateral surface of the electrode lead-out portion.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate including a horizontal and circular wafer placement surface, and a horizontal and annular focus ring placement surface provided on an outer circumference of the wafer placement surface at a position lower than the wafer placement surface by one step, and a connection part that connects the wafer placement surface and the focus ring placement surface; and a cooling plate provided on a lower surface of the ceramic plate, wherein the connection part has a lateral surface of a circular truncated cone with a diameter that increases from the wafer placement surface to the focus ring placement surface, and the diameter of the upper surface of the circular truncated cone matches the outer diameter of the wafer placement surface, and the diameter of the lower surface of the circular truncated cone matches the inner diameter of the focus ring placement surface.

Abstract: A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

Abstract: A machining processing apparatus or the like is provided, which is suitable for reducing a burden on a user in adjusting machining conditions using machining results. The machining processing apparatus 1 machines a workpiece according to machining conditions. The machining conditions include multiple items and setting values for each item. The machining processing apparatus 1 includes an individual input processing unit 13, a support input processing unit 15, and an input/output unit 3. The individual input processing unit 13 allows the user to input setting values for each machining conditions item. The support input processing unit 15 calculates a change amount for one or multiple machining conditions items according to a modification of the machining shape of the workpiece input by the user, and instructs the input/output unit 3 to display the one or multiple items to be modified as change details together with the change amount for each item.

Abstract: A member for a semiconductor manufacturing apparatus includes: a ceramic plate that has a wafer placement surface at an upper surface thereof; a plug disposition hole that extends through the ceramic plate in an up-down direction and that has a truncated conical space whose upper opening is larger than a lower opening thereof; a truncated conical plug that is disposed in the plug disposition hole, that allows gas to flow in the up-down direction, and whose upper surface is larger than a lower surface thereof; an adhesive layer that is provided between the plug disposition hole and the truncated conical plug; an electrically conductive baseplate that is joined to a lower surface of the ceramic plate through a joint layer; and a gas supply path that is provided in the baseplate and the joint layer and that supplies gas to the truncated conical plug.

Abstract: A member for a semiconductor manufacturing apparatus, includes: a ceramic plate that has a ceramic plate through hole; an electroconductive base plate that has a base plate through hole and that is disposed on a lower surface side of the ceramic plate; an insulating sleeve which is inserted into the base plate through hole and of which an outer peripheral surface is adhered to an inner peripheral surface of the base plate through hole via an adhesion layer; and a sleeve through hole that passes through the insulating sleeve in the up-down direction and that communicates with the ceramic plate through hole. The insulating sleeve has a tool engaging portion that is engageable with an external tool, and upon being engaged with the external tool, the tool engaging portion transmits rotation torque of the external tool to the insulating sleeve.

Abstract: A wafer placement table includes: a ceramic substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a cooling substrate which is bonded to a lower surface of the ceramic substrate, and in which a refrigerant flow path is formed; a power supply terminal connected to the electrode; and a power supply terminal hole vertically penetrating the cooling substrate and storing the power supply terminal. The power supply terminal hole intersects with the refrigerant flow path.

Abstract: A dental restorative curable compositions may have a high mechanical strength and excellent water resistance and polishability in the form of a cured product. A dental composite resin may include such compositions. A dental mill blank may include the cured product of such compositions. A dental restorative curable composition may include: a (meth)acrylic acid ester compound (A) having two or more (meth)acryloyloxy groups per molecule; a mono(meth)acrylic acid ester compound (B); an inorganic filler (C) having an average primary particle diameter of 0.01 to 5 ?m; and a polymerization initiator (D).

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate in which an electrode is embedded; a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode; a power feeder inserted in the power feeder receiving hole; a recess extending from a bottom surface of the power feeder receiving hole to the electrode or an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder; a first brazing material layer filling the recess; and a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole.

Abstract: A wafer placement table includes a ceramic base including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding the ceramic base and the cooling base, a stepped hole penetrating the bonding layer and the cooling base and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and a connection terminal bonded to the electrode and inserted through the stepped insulating pipe.

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.

Abstract: A wafer placement table includes a ceramic plate, an electrode embedded in the ceramic plate, a hollow ceramic shaft attached to a surface of the ceramic plate, a power-supplying member running inside the ceramic shaft and connected to a terminal of the electrode, a plate-side attaching site defined on the ceramic plate and to which the power-supplying member is attached, a power-source-side attaching site defined at a free end of the ceramic shaft and to which the power-supplying member is attached, and a redirecting member provided inside the ceramic shaft. The power-source-side attaching site is defined in correspondence with the plate-side attaching site and in such a manner as to be shifted from the plate-side attaching site in plan view. The redirecting member holds the power-supplying member such that the power-supplying member extending from the power-source-side attaching site is forcibly redirected toward the plate-side attaching site.

Abstract: A feeder member is used to supply electricity to an electrode embedded in a ceramic base. The feeder member includes an electrode-side terminal that is made of a high-melting-point metal containing material and joined to the electrode, an intermediate member that is made of a Cu containing material and directly joined to the electrode-side terminal without using a brazing material, a cable support member that is made of a Cu containing material and joined to the intermediate member, and a cable that is made of a Cu containing material and that has one end whose end surface is welded to the cable support member.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.

Abstract: A wafer placement table includes a ceramic plate, an electrode embedded in the ceramic plate, a hollow ceramic shaft attached to a surface of the ceramic plate, a power-supplying member running inside the ceramic shaft and connected to a terminal of the electrode, a plate-side attaching site defined on the ceramic plate and to which the power-supplying member is attached, and a power-source-side attaching site defined at a free end of the ceramic shaft and to which the power-supplying member is attached. The power-source-side attaching site is defined in correspondence with the plate-side attaching site and in such a manner as to be shifted from the plate-side attaching site in plan view. The power-supplying member includes a redirecting portion where the power-supplying member extending from the power-source-side attaching site is forcibly redirected toward the plate-side attaching site.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and that contains an electrode; a plug insertion hole that is formed as at least a portion of a through-hole extending through the ceramic plate in an up-down direction, an internal thread portion being on an inner circumferential surface around the plug insertion hole; and an insulating plug that includes an external thread portion screwed on the internal thread portion on an outer circumferential surface and that allows gas to pass therethrough.

Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its top surface and incorporating an electrode; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided in the ceramic plate penetrating part and that allows gas to pass inside; a gas introduction passage provided at least inside the electrically conductive plate and communicating with the ceramic plate penetrating part; and an electrically conductive gas passage part provided in the gas introduction passage, being in contact with a bottom surface of the electrically insulating gas passage plug, being electrically continuous with the electrically conductive plate, and that allows gas to pass inside.