Abstract: There are provided a substrate holder that holds a plurality of substrates, a reaction tube that houses the substrate holder, a gas supplier that has a plurality of supply holes corresponding one-to-one to the plurality of substrates and supplies gas to the plurality of substrates, and a plurality of plates provided in substantially parallel to the plurality of substrates, in which at least part of each of the plurality of plates is disposed between the gas supplier and the substrate holder.

Abstract: A technique for connecting a nozzle to a reaction tube while preventing the nozzle from collapsing includes a substrate processing apparatus including: a gas introduction structure comprising a non-metallic material penetrating a side wall of a process vessel and integrated with the side wall as a single structure, wherein a front end thereof protrudes into the process vessel; a nozzle made of a non-metallic material and including: a first straight portion inserted into the gas introduction structure and fluidically communicating with the gas introduction structure; and a second straight portion fluidically communicating with the first straight portion and extending along an inner wall of the process vessel; and a fixing block provided at an inner side of the process vessel and above the gas introduction structure, wherein the fixing block has a groove where the nozzle can be moved in a radial direction of the process vessel.

Abstract: There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening structure including: an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.

Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.

Abstract: There is provided a technique that includes: a substrate transfer chamber; a pod transfer chamber; a plurality of reinforcement structures installed along a wall of a housing constituting the substrate transfer chamber and forming a plurality of first confinement spaces between the reinforcement structures and the wall; a communication hole installed at each of the plurality of reinforcement structures so that a space in the housing and each of the plurality of first confinement spaces communicate with each other; a collecting pipe having the plurality of reinforcement structures connected in the housing and including a second confinement space communicating with the plurality of first confinement spaces; and a pressure regulator connected to the collecting pipe, and configured to perform a regulation so that a relationship of pressure is satisfied.

Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Abstract: A substrate processing apparatus includes a holder configured to hold a substrate and carry the substrate into a process chamber, a waiting station located outside the process chamber in which the holder waits prior to carrying the substrate into the process chamber, a circulation path configured to circulate a gas throughout the waiting station, and an exhaust path formed in the circulation path and configured to exhaust the gas from the waiting station.

Abstract: The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part.

Abstract: The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part.

Abstract: A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface.

Abstract: In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.

Abstract: A substrate processing apparatus is equipped with a processing furnace for processing wafers, a loading port which is used for carrying a pod containing substrates into and out of a case, a pod transport mechanism for transporting the container at least from the entrance and exit place, and a top storage which is disposed above the processing furnace in such a manner that at least part of the top storage overlaps with the processing furnace in the direction of gravity.

Abstract: A substrate processing apparatus includes a holder configured to hold a substrate and carry the substrate into a process chamber, a waiting station located outside the process chamber in which the holder waits prior to carrying the substrate into the process chamber, a circulation path configured to circulate a gas throughout the waiting station, and an exhaust path formed in the circulation path and configured to exhaust the gas from the waiting station.

Abstract: Provided is a substrate processing apparatus that can decrease the time necessary for cooling a processed wafer for improving the throughput. The substrate processing apparatus comprises: a process chamber configured to process a substrate; a substrate supporter configured to support the substrate and load the substrate into the process chamber; a transfer mechanism configured to carry the substrate to the substrate supporter; and a non-sealing type shield part installed between the substrate supporter and the transfer mechanism.