Abstract: A gas flow in a load-lock type preliminary chamber is improved.

Abstract: An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.

Abstract: In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.

Abstract: A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface.

Abstract: A substrate processing apparatus is equipped with a processing furnace for processing wafers, a loading port which is used for carrying a pod containing substrates into and out of a case, a pod transport mechanism for transporting the container at least from the entrance and exit place, and a top storage which is disposed above the processing furnace in such a manner that at least part of the top storage overlaps with the processing furnace in the direction of gravity.

Abstract: A substrate processing apparatus that affords improved uniformity to in-plane wafer and interwafer film thickness of a large number of wafers on which a film is simultaneously formed, having: a reaction tube having in an interior thereof a processing chamber in which a plurality of substrates disposed in a direction perpendicular to a substrate processing surface can be processed; and a heating device provided to surround an outer circumference of the reaction tube, a gas inlet tube being provided on a side face of the reaction tube in a region for processing a substrate inside the reaction tube, so as to reach at least an outside of the heating device; and a gas spouting port being disposed in this gas inlet tube in a slit form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface, for spouting gas from the gas inlet tube into the processing chamber.

Abstract: A gas flow in a load-lock type preliminary chamber is improved.

Abstract: A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.

Abstract: A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.