Abstract: A semiconductor structure and method of forming the same are provided. The semiconductor structure has a conductive structure. The semiconductor structure includes a first conductive line, a second conductive line, a third conductive line and a conductive via. The first conductive line and the second conductive line are located in a first dielectric layer and extend along a first direction. The first conductive line and the second conductive line are spaced from each other by the first dielectric layer therebetween. The third conductive line is located in a second dielectric layer and extends along a second direction. The conductive via is vertically between the first conductive line and the third conductive line, and between the second conductive line and the third conductive line. The conductive via, in a vertical direction, is overlapped with a portion of the first dielectric layer that is laterally between the first conductive line and the second conductive line.

Abstract: The present invention relates to a compound of formula (I) capable of inhibiting plasmin activity and having blood coagulation and hemostasis activity, and a pharmaceutically acceptable salt, hydrate, isomer, prodrug and mixture thereof, wherein R1 to R3 are as defined in the description.

Abstract: Embodiments of the present disclosure provide a progress adjustment method and apparatus, an electronic device and a storage medium. The method comprises: receiving a progress adjustment operation that acts on a progress bar of a target content; in response to the progress adjustment operation, expanding a size of the progress bar, and adjusting the progress of the target content according to the progress adjustment operation; and in response to determining that the progress adjustment operation ends, stopping adjusting, according to the progress adjustment operation, the progress of the target content.

Abstract: A thin film transistor (TFT) structure includes a gate electrode, a gate dielectric layer on the gate electrode, a channel layer including a semiconductor material with a first polarity on the gate dielectric layer. The TFT structure also includes a multi-layer material stack on the channel layer, opposite the gate dielectric layer, an interlayer dielectric (ILD) material over the multi-layer material stack and beyond a sidewall of the channel layer. The TFT structure further includes source and drain contacts through the interlayer dielectric material, and in contact with the channel layer, where the multi-layer material stack includes a barrier layer including oxygen and a metal in contact with the channel layer, where the barrier layer has a second polarity. A sealant layer is in contact with the barrier layer, where the sealant layer and the ILD have a different composition.

Abstract: Aspects of the invention include systems and methods configured to prevent masquerading service attacks. A non-limiting example computer-implemented method includes sending, from a first server in a cloud environment, a communication request comprising an application programming interface (API) key and a first server identifier to an identity and access management (IAM) server of the cloud environment. The API key can be uniquely assigned by the IAM server to a first component of the first server. The first server receives a credential that includes a token for the first component and sends the credential to a second server. The second server sends the credential, a second server identifier, and an identifier for a second component of the second server to the IAM server. The second server receives an acknowledgment from the IAM server and sends the acknowledgment to the first server.

Abstract: An imaging system lens assembly includes, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof. The second lens element with positive refractive power has an image-side surface being convex in a paraxial region thereof. The third lens element has an object-side surface being concave in a paraxial region thereof and an image-side surface being convex in a paraxial region thereof. The fifth lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof and having at least one inflection point.

Abstract: The present invention discloses a refrigerator, including a cabinet and a door for opening or closing the cabinet, a dedicated region module being provided on an inner side of the door facing the cabinet, and the dedicated region module having a receiving space for storing articles, the refrigerator further includes a wireless charging unit, the wireless charging unit includes a receiving terminal provided on the dedicated region module and a transmitting terminal provided on the cabinet, the transmitting terminal is matched with the receiving terminal and configured to transmit generated energy, and the dedicated region module further includes an electric component electrically connected with the receiving terminal.

Abstract: A method includes identifying an image of a substrate processing equipment part that forms a plurality of holes. The method further includes determining, by a processing device based on the image, a corresponding neighboring angular distance of each of the plurality of holes and a corresponding area of each of the plurality of holes. The method further includes identifying, by the processing device, a first subset of the plurality of holes that are at least partially clogged based on at least one of the corresponding neighboring angular distance or the corresponding area of each of the plurality of holes. A corrective action associated with the substrate processing equipment part is to be performed based on the first subset of the plurality of holes that are at least partially clogged.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed.

Abstract: Disclosed is a massive data-driven method for automatically locating a mine microseismic source, including: constructing a microseismic wave calibration data set by using a large-scale seismic data set containing seismic signals and non-seismic signals; constructing a pre-training calibration model based on a full convolution neural network through deep learning of a seismic wave calibration data set; using microseismic data of mine sites for transfer learning of an initial arrival time calibration model to construct an arrival time automatic calibration model suitable for mine microseismic signals; and automatically as well as accurately locating mine microseismic events based on an isokinetic homogeneous isotropic velocity model by using an optimization algorithm to deduce arrival time errors and through repeated iteration and fine-tuning.

Abstract: Provided are a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes a flexible substrate, a driving structure layer disposed on the flexible substrate, a light-emitting element disposed on the driving structure layer, and an encapsulation layer disposed on the light-emitting element. The flexible substrate includes a first flexible substrate layer, a first connection layer disposed on the first flexible substrate layer, and a second flexible substrate layer disposed on the first connection layer, wherein, the first connection layer includes at least one first via, and the first flexible substrate layer includes at least one first groove provided corresponding to the first via; the first via and the first groove are mutually communicated, and an orthographic projection of the first groove on the first flexible substrate layer includes an orthographic projection of the first via on the first flexible substrate layer.

Abstract: Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first metal line extending along a first direction, a second metal line lengthwise aligned with and spaced apart from the first metal line, and a third metal line extending along the first direction. The third metal line includes a branch extending along a second direction perpendicular to the first direction and the branch partially extends between the first metal line and the second metal line.

Abstract: An approach for protecting container image and runtime data from host access may be presented. Container systems have allowed for more efficient utilization of computing resources, removing the requirement of a hypervisor, and packaging all necessary dependencies within an application. Preventing host access to container image and runtime data can be advantageous for a multitude of reasons. The approach herein may include, flattening a plurality of root file system of a one or more container images into a single layer. The approach may also include generating a container base image for each of the one or more flattened root file system. The approach may include encrypting each of the generated container base images with the flattened root file system.

Abstract: Disclosed in embodiments of the present invention are a method for processing scrambling information, a terminal, and a network apparatus. The method comprises: a network apparatus determining first information, wherein the first information is associated with at least one piece of the following information: a transmission point, a multiple-input multiple-output (MIMO) data layer of the transmission point, a code block transmitted from the transmission point, and a data channel and a preamble transmitted from the transmission point; and the network apparatus determining, at least on the basis of the first information, initialization information for scrambling.