Abstract: A semiconductor package system includes: providing a semiconductor die with bonding pad on the semiconductor die; attaching the semiconductor die to an intermediate layer; attaching one end of a bonding wire to the bonding pad; forming a bonding ball at the other end of the bonding wire, the bonding ball being fully or partially embedded in the intermediate layer; encapsulating the semiconductor die, the bonding pad, the bonding wire, and a portion of the bonding ball with a mold compound; removing the intermediate layer, resulting in the bonding ball protruding from the exposed mold compound bottom surface; and conditioning the bonding ball.

Abstract: An integrated circuit package in package system includes: a base integrated circuit package with a base lead substantially coplanar with a base die paddle and having a portion with a substantially planar base surface; an extended-lead integrated circuit package with an extended lead having a portion with a substantially planar lead-end surface; a package-stacking layer over the base integrated circuit package; and the extended-lead integrated circuit package over the base integrated circuit package including: an end portion of the extended lead, directly on the package-stacking layer, and the extended lead exposed by and extending away from the bottom of the side of an extended-lead encapsulation and bending downwards toward the direction of the package stacking layer with the substantially planar lead-end surface coplanar with the substantially planar base surface.

Abstract: A semiconductor device has a stress relief buffer mounted to a temporary substrate in locations designated for bump formation. The stress relief buffer can be a multi-layer composite material such as a first compliant layer, a silicon layer formed over the first compliant layer, and a second compliant layer formed over the silicon layer. A semiconductor die is also mounted to the temporary substrate. The stress relief buffer can be thinner than the semiconductor die. An encapsulant is deposited between the semiconductor die and stress relief buffer. The temporary substrate is removed. An interconnect structure is formed over the semiconductor die, encapsulant, and stress relief buffer. The interconnect structure is electrically connected to the semiconductor die. A stiffener layer can be formed over the stress relief buffer and encapsulant. A circuit layer containing active devices, passive devices, conductive layers, and dielectric layers can be formed within the stress relief buffer.

Abstract: An integrated circuit package system includes: providing a flexible circuit substrate; mounting an integrated circuit or an integrated circuit package over the flexible circuit substrate and connected to the flexible circuit substrate with interconnects; and encapsulating the integrated circuit or integrated circuit package with a mounded encapsulation having a first level and a second level, the second level having the flexible circuit substrate folded thereover.

Abstract: A method for manufacturing an integrated circuit package system includes: providing a leadframe; forming a protruding pad on the leadframe; attaching a die to the leadframe; electrically connecting the die to the leadframe; and encapsulating at least portions of the leadframe, the protruding pad, and the die in an encapsulant.

Abstract: A semiconductor device includes conductive pillars disposed vertically over a seed layer, a conformal insulating layer formed over the conductive pillars, and a conformal conductive layer formed over the conformal insulating layer. A first conductive pillar, the conformal insulating layer, and the conformal conductive layer constitute a vertically oriented integrated capacitor. The semiconductor device further includes a semiconductor die or component mounted over the seed layer, an encapsulant deposited over the semiconductor die or component and around the conformal conductive layer, and a first interconnect structure formed over a first side of the encapsulant. The first interconnect structure is electrically connected to a second conductive pillar, and includes an integrated passive device. The semiconductor device further includes a second interconnect structure formed over a second side of the encapsulant opposite the first side of the encapsulant.

Abstract: A method for fabricating an encapsulant cavity integrated circuit package system includes: forming a first integrated circuit package with an inverted bottom terminal having an encapsulant cavity and an interposer, and attaching a component on the interposer in the encapsulant cavity.

Abstract: A method of manufacture of a circuit system includes: providing a carrier base; forming a cavity in the carrier base; forming a bridge lead over the cavity, the bridge lead exposing the cavity; and mounting a device having an anchor interconnect, the anchor interconnect is in the cavity and conformal to the bridge lead over the cavity.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; attaching a base integrated circuit on the base substrate; attaching a base barrier on the base substrate adjacent a base perimeter thereof; mounting a stack substrate over the base substrate, the stack substrate having a stack substrate aperture with the stack substrate having an inter-substrate connector thereon; and dispensing a connector underfill through the stack substrate aperture encapsulating the inter-substrate connector, overflow of the connector underfill prevented by the base barrier.

Abstract: A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

Abstract: A semiconductor package is made using a prefabricated post carrier including a base plate and plurality of conductive posts. A film encapsulant is disposed over the base plate of the post carrier and around the conductive posts. A semiconductor die is mounted to a temporary carrier. The post carrier and temporary carrier are pressed together to embed the semiconductor die in the film encapsulant. The semiconductor die is disposed between the conductive posts in the film encapsulant. The temporary carrier and base plate of the post carrier are removed. A first circuit build-up layer is formed over a first side of the film encapsulant. The first circuit build-up layer is electrically connected to the conductive posts. A second circuit build-up layer is formed over a second side of the film encapsulant opposite the first side. The second circuit build-up layer is electrically connected to the conductive posts.

Abstract: A semiconductor device is made by mounting a first semiconductor die to a first substrate, forming a first encapsulant over the first semiconductor die, and forming a second encapsulant over the first encapsulant. The second encapsulant is penetrable, thermally conductive material. A second semiconductor die is mounted to the second substrate. A bond wire electrically connects the second semiconductor die to the second substrate. A passive circuit element is mounted to the second substrate. Leading with the second encapsulant, the first substrate is pressed onto the second substrate so that the second encapsulant completely covers the second semiconductor die, bond wire, and passive circuit element. The second encapsulant is then cured. A third encapsulant is formed over the first and second substrates. A shield can be disposed over the second semiconductor die with openings for the second encapsulant to flow through when pressed onto the second substrate.

Abstract: A semiconductor device is made by forming a plurality of conductive pillars vertically over a temporary carrier. A conformal insulating layer is formed over the conductive pillars. A conformal conductive layer is formed over the conformal insulating layer. A first conductive pillar, conformal insulating layer, and conformal conductive layer constitute a vertically oriented integrated capacitor. A semiconductor die or component is mounted over the carrier. An encapsulant is deposited over the semiconductor die or component and around the conformal conductive layer. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure includes an integrated passive device. The first interconnect structure is electrically connected to the semiconductor die or component and vertically oriented integrated capacitor. The carrier is removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first side of the encapsulant.

Abstract: A method for manufacturing a multiple encapsulation integrated circuit package-in-package system includes: dicing a top integrated circuit wafer having a bottom encapsulant thereon to form a top integrated circuit die with the bottom encapsulant; positioning internal leadfingers adjacent and connected to a bottom integrated circuit die; pressing the bottom encapsulant on to the bottom integrated circuit die; connecting the top integrated circuit die to external leadfingers adjacent the internal leadfingers; and forming a top encapsulant over the top integrated circuit die.

Abstract: An integrated circuit package on package system including forming an interconnect integrated circuit package and attaching an extended-lead integrated circuit package on the interconnect integrated circuit package wherein a mold cap of the extended-lead integrated circuit package faces a mold cap of the interconnect integrated circuit package.

Abstract: A semiconductor package system is provided. A substrate having a die attach paddle is provided. A first plurality of leads is provided around the die attach paddle having a first plurality of lead tips. A second plurality of leads is provided around the die attach paddle interleaved with the first plurality of leads, at least some of the second plurality of leads having a plurality of depression lead tips. A first die is attached to the die attach paddle. The die is wire bonded to the first plurality of leads and the second plurality of leads. The die is encapsulated.

Abstract: An integrated circuit package system includes: mounting a device structure over a package carrier; connecting an internal interconnect between the device structure and the package carrier; forming an interconnect lock over the internal interconnect over the device structure with interconnect lock exposing the device structure; and forming a package encapsulation adjacent to the interconnect lock and over the package carrier.

Abstract: An integrated circuit package in package system including forming a base integrated circuit package with a base lead having a portion with a substantially planar base surface, forming an extended-lead integrated circuit package with an extended lead having a portion with a substantially planar lead-end surface, and stacking the extended-lead integrated circuit package over the base integrated circuit package with the substantially planar lead-end surface coplanar with the substantially planar base surface.

Abstract: An integrated circuit package system is provided. A protruding pad is formed on a leadframe. A die is attached to the leadframe. The die is electrically connected to the leadframe. At least portions of the leadframe, the protruding pad, and the die are encapsulated in an encapsulant.

Abstract: A semiconductor device includes a first semiconductor die or component having a plurality of bumps, and a plurality of first and second contact pads. In one embodiment, the first and second contact pads include wettable contact pads. The bumps are mounted directly to a first surface of the first contact pads to align the first semiconductor die or component. An encapsulant is deposited over the first semiconductor die or component. An interconnect structure is formed over the encapsulant and is connected to a second surface of the first and second contact pads opposite the first surface of the first contact pads. A plurality of vias is formed through the encapsulant and extends to a first surface of the second contact pads. A conductive material is deposited in the vias to form a plurality of conductive vias that are aligned by the second contact pads to reduce interconnect pitch.