Patents by Inventor Seoyeon IM
Seoyeon IM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240047582Abstract: Discussed is a thin film transistor and a display apparatus. The thin film transistor can include a light shielding layer disposed on the substrate and formed of, or include conductive materials, an active layer disposed on the light shielding layer and overlapping the light shielding layer, a source electrode connected to a first side of the active layer and the light shielding layer, a drain electrode connected to a second side of the active layer, a gate electrode overlapping the active layer, and a connection layer disposed between the light shielding layer and the active layer, and electrically connecting the light shielding layer with the active layer.Type: ApplicationFiled: July 25, 2023Publication date: February 8, 2024Applicant: LG Display Co., Ltd.Inventors: Sungju CHOI, Jaeyoon PARK, JungSeok SEO, Seoyeon IM, Jinwon JUNG
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Publication number: 20240049526Abstract: A display apparatus includes a substrate including a display area and a non-display area at a periphery of the display area and a subpixel in the display area, wherein the subpixel includes a light emitting device layer including a first electrode, an emission layer, and a second electrode, a driving thin film transistor (TFT) connected to the first electrode, a switching TFT connected between a gate electrode and a drain electrode of the driving TFT, and a degradation prevention layer overlapping the switching TFT.Type: ApplicationFiled: May 12, 2023Publication date: February 8, 2024Inventor: Seoyeon Im
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Publication number: 20230420572Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.Type: ApplicationFiled: September 12, 2023Publication date: December 28, 2023Inventors: SeungJin KIM, HeeSung LEE, Sohyung LEE, MinCheol KIM, JeongSuk YANG, JeeHo PARK, Seoyeon IM
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Patent number: 11791418Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.Type: GrantFiled: July 7, 2022Date of Patent: October 17, 2023Assignee: LG Display Co., Ltd.Inventors: SeungJin Kim, HeeSung Lee, Sohyung Lee, MinCheol Kim, JeongSuk Yang, JeeHo Park, Seoyeon Im
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Publication number: 20230215955Abstract: Embodiments of the disclosure relate to a thin film transistor array substrate and an electronic device including the same.Type: ApplicationFiled: November 11, 2022Publication date: July 6, 2023Inventors: Seoyeon IM, Sungju CHOI, JungSeok SEO, Jaeyoon PARK, Jinwon JUNG
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Publication number: 20230140193Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.Type: ApplicationFiled: October 31, 2022Publication date: May 4, 2023Inventors: Sungju CHOI, JungSeok SEO, Younghyun KO, Jaeyoon PARK, Seoyeon IM, Jinwon JUNG
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Publication number: 20220344512Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.Type: ApplicationFiled: July 7, 2022Publication date: October 27, 2022Inventors: SeungJin KIM, HeeSung LEE, Sohyung LEE, MinCheol KIM, JeongSuk YANG, JeeHo PARK, Seoyeon IM
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Patent number: 11417774Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.Type: GrantFiled: January 21, 2021Date of Patent: August 16, 2022Assignee: LG Display Co., Ltd.Inventors: SeungJin Kim, HeeSung Lee, Sohyung Lee, MinCheol Kim, JeongSuk Yang, JeeHo Park, Seoyeon Im
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Publication number: 20220069130Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.Type: ApplicationFiled: November 11, 2021Publication date: March 3, 2022Inventors: HeeSung Lee, SungKi Kim, MinCheol Kim, SeungJin Kim, JeeHo Park, Seoyeon Im
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Patent number: 11201248Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.Type: GrantFiled: February 13, 2020Date of Patent: December 14, 2021Assignee: LG Display Co., Ltd.Inventors: HeeSung Lee, SungKi Kim, MinCheol Kim, SeungJin Kim, JeeHo Park, Seoyeon Im
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Patent number: 11011650Abstract: A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.Type: GrantFiled: August 8, 2018Date of Patent: May 18, 2021Assignee: LG DISPLAY CO., LTD.Inventors: Seoyeon Im, HeeSung Lee, SeungJin Kim, SungKi Kim
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Publication number: 20210143279Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.Type: ApplicationFiled: January 21, 2021Publication date: May 13, 2021Inventors: SeungJin KIM, HeeSung LEE, Sohyung LEE, MinCheol KIM, JeongSuk YANG, JeeHo PARK, Seoyeon IM
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Patent number: 10930790Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.Type: GrantFiled: May 31, 2018Date of Patent: February 23, 2021Assignee: LG DISPLAY CO., LTD.Inventors: SeungJin Kim, HeeSung Lee, Sohyung Lee, MinCheol Kim, JeongSuk Yang, JeeHo Park, Seoyeon Im
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Publication number: 20200185531Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.Type: ApplicationFiled: February 13, 2020Publication date: June 11, 2020Inventors: HeeSung LEE, SungKi KIM, MinCheol KIM, SeungJin KIM, JeeHo PARK, Seoyeon IM
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Patent number: 10608117Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.Type: GrantFiled: June 26, 2018Date of Patent: March 31, 2020Assignee: LG Display Co., Ltd.Inventors: HeeSung Lee, SungKi Kim, MinCheol Kim, SeungJin Kim, JeeHo Park, Seoyeon Im
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Patent number: 10388739Abstract: The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.Type: GrantFiled: August 8, 2018Date of Patent: August 20, 2019Assignee: LG Display Co., Ltd.Inventors: HeeSung Lee, Seoyeon Im, Kwon-Shik Park, SungKi Kim
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Publication number: 20190140101Abstract: A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.Type: ApplicationFiled: August 8, 2018Publication date: May 9, 2019Applicant: LG Display Co., Ltd.Inventors: Seoyeon IM, HeeSung LEE, SeungJin KIM, SungKi KIM
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Publication number: 20190123149Abstract: The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.Type: ApplicationFiled: August 8, 2018Publication date: April 25, 2019Applicant: LG Display Co., Ltd.Inventors: HeeSung LEE, Seoyeon IM, Kwon-Shik PARK, SungKi KIM
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Publication number: 20180374956Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.Type: ApplicationFiled: June 26, 2018Publication date: December 27, 2018Inventors: HeeSung LEE, SungKi KIM, MinCheol KIM, SeungJin KIM, JeeHo PARK, Seoyeon IM
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Publication number: 20180350995Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.Type: ApplicationFiled: May 31, 2018Publication date: December 6, 2018Inventors: SeungJin KIM, HeeSung LEE, Sohyung LEE, MinCheol KIM, JeongSuk YANG, JeeHo PARK, Seoyeon IM