Patents by Inventor Seok Beom Choi
Seok Beom Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9947835Abstract: A light emitting device includes a substrate; a plurality of light emitting cells disposed on the substrate to be spaced apart from one another, the light emitting cell having a via hole passing through the second conductive type semiconductor layer, the active layer and a part of the first conductive type semiconductor layer; a first electrode layer electrically connected to the first conductive type semiconductor layer at a bottom of the via hole; a second electrode layer disposed on the second conductive type semiconductor layer; and a first passivation layer, electrically separating the first electrode layer from the second electrode layer, wherein the first electrode layer of one light emitting cell is electrically connected to the second electrode layer of another light emitting cell adjacent to the one light emitting cell.Type: GrantFiled: June 15, 2015Date of Patent: April 17, 2018Assignee: LG INNOTEK CO., LTD.Inventors: Jae Won Seo, Seok Beom Choi
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Patent number: 9893235Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, under the transmissive substrate; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode. A transmissive resin layer is on the transmissive substrate and an insulating layer is between the insulating support member and the reflective electrode layer.Type: GrantFiled: February 10, 2015Date of Patent: February 13, 2018Assignee: LG INNOTEK CO., LTDInventors: Pil Geun Kang, Hee Seok Choi, Seok Beom Choi, Ju Won Lee, Deok Ki Hwang, Young Ju Han
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Publication number: 20170236979Abstract: An embodiment provides a light emitting device comprising: a substrate; a plurality of light emitting cells disposed on the substrate to be spaced apart from one another, each light emitting cell comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting cell having a via hole passing through the second conductive type semiconductor layer, the active layer and a part of the first conductive type semiconductor layer; a first electrode layer electrically connected to the first conductive type semiconductor layer at a bottom of the via hole; a second electrode layer disposed on the second conductive type semiconductor layer; and a first passivation layer electrically separating the first electrode layer from the second electrode layer, wherein the first electrode layer of one light emitting cell is electrically connected to the second electrode layer of another light emitting cell adjacent to the one light emitting cell, and due tType: ApplicationFiled: June 15, 2015Publication date: August 17, 2017Inventors: Jae Won SEO, Seok Beom CHOI
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Patent number: 9673366Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode on a part of the first semiconductor layer, an electrode layer on the second conductive semiconductor layer, an insulating layer on the electrode layer, a second electrode on the electrode layer, a support member on the insulating layer, a first connection electrode connected to the first electrode, and a second connection electrode connected to the second electrode. The insulating layer is disposed on a side surface of the light emitting structure and the part of the first semiconductor layer. The insulating layer includes a first layer and a second layer having a different material from the first layer. The first layer of the insulating layer has a refractive index different from the second layer of the insulating layer.Type: GrantFiled: October 28, 2015Date of Patent: June 6, 2017Assignee: LG Innotek Co., Ltd.Inventors: Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Ju Won Lee, Pil Geun Kang, Seok Beom Choi
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Patent number: 9595640Abstract: Disclosed are a light emitting device, a light emitting device package and a light emitting module. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a support member under the light emitting structure; a reflective electrode layer between the second conductive semiconductor layer and the support member; and first to third connection electrodes spaced apart from each other in the support member. The second connection electrode is disposed between the first and third connection electrodes, the first and third connection electrodes are electrically connected with each other, and the support member is disposed at a peripheral portion of the first to third connection electrodes.Type: GrantFiled: January 2, 2013Date of Patent: March 14, 2017Assignee: LG Innotek Co., Ltd.Inventors: Seok Hun Bae, Seok Beom Choi, Pil Geun Kang, Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Young Rok Park, Tae Don Lee, Hyun Sung Oh, Jee Hue Joo, Dong Woo Kang, Sung Sig Kim
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Patent number: 9577155Abstract: A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.Type: GrantFiled: December 4, 2015Date of Patent: February 21, 2017Assignee: LG Innotek Co., Ltd.Inventor: Seok Beom Choi
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Patent number: 9397261Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.Type: GrantFiled: November 15, 2012Date of Patent: July 19, 2016Assignee: LG Innotek Co., Ltd.Inventors: Pil Geun Kang, Hee Seok Choi, Seok Beom Choi, Ju Won Lee, Deok Ki Hwang, Young Ju Han
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Publication number: 20160087156Abstract: A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.Type: ApplicationFiled: December 4, 2015Publication date: March 24, 2016Inventor: Seok Beom CHOI
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Patent number: 9269878Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.Type: GrantFiled: November 10, 2011Date of Patent: February 23, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Ju Won Lee, Pil Geun Kang, Seok Beom Choi
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Publication number: 20160049546Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode on a part of the first semiconductor layer, an electrode layer on the second conductive semiconductor layer, an insulating layer on the electrode layer, a second electrode on the electrode layer, a support member on the insulating layer, a first connection electrode connected to the first electrode, and a second connection electrode connected to the second electrode. The insulating layer is disposed on a side surface of the light emitting structure and the part of the first semiconductor layer. The insulating layer includes a first layer and a second layer having a different material from the first layer. The first layer of the insulating layer has a refractive index different from the second layer of the insulating layer.Type: ApplicationFiled: October 28, 2015Publication date: February 18, 2016Inventors: Deok Ki HWANG, Young Ju HAN, Hee Seok CHOI, Ju Won LEE, Pil Geun KANG, Seok Beom CHOI
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Patent number: 9224922Abstract: A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.Type: GrantFiled: June 4, 2014Date of Patent: December 29, 2015Assignee: LG INNOTEK CO., LTD.Inventor: Seok Beom Choi
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Publication number: 20150179884Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, under the transmissive substrate; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode. A transmissive resin layer is on the transmissive substrate and an insulating layer is between the insulating support member and the reflective electrode layer.Type: ApplicationFiled: February 10, 2015Publication date: June 25, 2015Inventors: Pil Geun KANG, Hee Seok CHOI, Seok Beom CHOI, Ju Won LEE, Deok Ki HWANG, Young Ju HAN
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Publication number: 20140361243Abstract: A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.Type: ApplicationFiled: June 4, 2014Publication date: December 11, 2014Applicant: LG INNOTEK CO., LTD.Inventor: Seok Beom CHOI
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Publication number: 20130193464Abstract: Disclosed are a light emitting device, a light emitting device package and a light emitting module. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a support member under the light emitting structure; a reflective electrode layer between the second conductive semiconductor layer and the support member; and first to third connection electrodes spaced apart from each other in the support member. The second connection electrode is disposed between the first and third connection electrodes, the first and third connection electrodes are electrically connected with each other, and the support member is disposed at a peripheral portion of the first to third connection electrodes.Type: ApplicationFiled: January 2, 2013Publication date: August 1, 2013Inventors: Seok Hun BAE, Seok Beom CHOI, Pil Geun KANG, Deok Ki HWANG, Young Ju HAN, Hee Seok CHOI, Young Rok PARK, Tae Don LEE, Hyun Sung OH, Jee Hue JOO, Dong Woo KANG, Sung Sig KIM
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Publication number: 20130119424Abstract: A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure under the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode and including a ceramic-based thermal diffusion agent.Type: ApplicationFiled: November 15, 2012Publication date: May 16, 2013Inventors: Pil Geun KANG, Hee Seok CHOI, Seok Beom CHOI, Ju Won LEE, Deok Ki HWANG, Young Ju HAN
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Publication number: 20120299038Abstract: A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.Type: ApplicationFiled: November 10, 2011Publication date: November 29, 2012Inventors: Deok Ki Hwang, Young Ju Han, Hee Seok Choi, Ju Won Lee, Pil Geun Kang, Seok Beom Choi
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Patent number: 8198114Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: GrantFiled: October 21, 2010Date of Patent: June 12, 2012Assignee: Samsung LED Co., Ltd.Inventors: Sang Ho Yoon, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 8178378Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: GrantFiled: October 21, 2010Date of Patent: May 15, 2012Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Ho Yoon, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 8168454Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: GrantFiled: May 14, 2009Date of Patent: May 1, 2012Assignee: Samsung LED Co., Ltd.Inventors: Su Yeol Lee, Sang Ho Yoon, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 8115220Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: GrantFiled: August 14, 2007Date of Patent: February 14, 2012Assignee: Samsung LED Co., Ltd.Inventors: Su Yeol Lee, Sang Ho Yoon, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo