Patents by Inventor Seok Beom Choi
Seok Beom Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8012779Abstract: A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: GrantFiled: July 24, 2007Date of Patent: September 6, 2011Assignee: Samsung LED Co., Ltd.Inventors: Seok Beom Choi, Bang Won Oh, Jong Gun Woo, Doo Go Baik
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Publication number: 20110053298Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: ApplicationFiled: October 21, 2010Publication date: March 3, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Sang Ho YOON, Su Yeol LEE, Doo Go BAIK, Seok Beom CHOI, Tae Sung JANG, Jong Gun WOO
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Publication number: 20110033965Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: ApplicationFiled: October 21, 2010Publication date: February 10, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Sang Ho YOON, Su Yeol LEE, Doo Go BAIK, Seok Beom CHOI, Tae Sung JANG, Jong Gun WOO
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Patent number: 7872276Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portionsType: GrantFiled: May 1, 2007Date of Patent: January 18, 2011Assignee: Samsung LED Co., Ltd.Inventors: Su Yeol Lee, Bang Won Oh, Doo Go Baik, Tae Sung Jang, Jong Gun Woo, Seok Beom Choi, Sang Ho Yoon, Dong Woo Kim, In Tae Yeo
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Patent number: 7838317Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: GrantFiled: August 20, 2009Date of Patent: November 23, 2010Assignee: Samsung LED Co., Ltd.Inventors: Sang Ho Yoon, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 7791100Abstract: A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.Type: GrantFiled: November 21, 2006Date of Patent: September 7, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Su Yeol Lee, Dong Woo Kim, Seok Beom Choi, Tae Jun Kim
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Patent number: 7695989Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.Type: GrantFiled: March 18, 2009Date of Patent: April 13, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Doo Go Baik, Bang Won Oh, Seok Beom Choi, Su Yeol Lee
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Patent number: 7687818Abstract: There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked.Type: GrantFiled: July 22, 2008Date of Patent: March 30, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Ho Yoon, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Publication number: 20090311817Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: ApplicationFiled: August 20, 2009Publication date: December 17, 2009Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sang Ho YOON, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Publication number: 20090221110Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: ApplicationFiled: May 14, 2009Publication date: September 3, 2009Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Su Yeol LEE, Sang Ho Yoon, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 7573076Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.Type: GrantFiled: December 6, 2006Date of Patent: August 11, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Doo Go Baik, Bang Won Oh, Seok Beom Choi, Su Yeol Lee
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Publication number: 20090181485Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.Type: ApplicationFiled: March 18, 2009Publication date: July 16, 2009Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Doo Go BAIK, Bang Won Oh, Seok Beom Choi, Su Yeo Lee
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Publication number: 20090026478Abstract: There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked.Type: ApplicationFiled: July 22, 2008Publication date: January 29, 2009Inventors: Sang Ho YOON, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 7436001Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.Type: GrantFiled: July 21, 2006Date of Patent: October 14, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jae Hoon Lee, Bang Won Oh, Hee Seok Choi, Jeong Tak Oh, Seok Beom Choi, Su Yeol Lee
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Patent number: 7393710Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.Type: GrantFiled: October 11, 2005Date of Patent: July 1, 2008Assignee: Samsung Electro-Mechanics Co., LtdInventors: Jin Chul Kim, Su Yeol Lee, Chang Zoo Kim, Sang Heon Han, Keun Man Song, Tae Jun Kim, Seok Beom Choi
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Patent number: 7372078Abstract: A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.Type: GrantFiled: October 16, 2006Date of Patent: May 13, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Sung Jang, Su Yeol Lee, Seok Beom Choi
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Publication number: 20080093618Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: ApplicationFiled: August 14, 2007Publication date: April 24, 2008Inventors: Su Yeol Lee, Sang Ho Yoon, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 7361521Abstract: The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.Type: GrantFiled: August 15, 2006Date of Patent: April 22, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jeong Tak Oh, Jae Hoon Lee, Seok Beom Choi
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Publication number: 20080048206Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portionsType: ApplicationFiled: May 1, 2007Publication date: February 28, 2008Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Su Yeol LEE, Bang Won OH, Doo Go BAIK, Tae Sung JANG, Jong Gun WOO, Seok Beom CHOI, Sang Ho YOON, Dong Woo KIM, In Tae YEO
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Publication number: 20080042149Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: ApplicationFiled: March 28, 2007Publication date: February 21, 2008Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sang Ho YOON, Su Yeol LEE, Doo Go BAIK, Seok Beom CHOI, Tae Sung JANG, Jong Gun WOO