Abstract: A data storage apparatus includes a nonvolatile memory device including a plurality of memory blocks in which a plurality of word lines to which one or more pages are coupled are arranged, a data buffer configured to buffer data to be stored in the one or more pages of the nonvolatile memory device, and a processor configured to detect, when a sudden power off (SPO) occurs, one or more first pages in which an interference has occurred in a memory block in use and store data corresponding to the one or more first pages in which the interference has occurred among the data buffered in the data buffer in a backup memory block of the nonvolatile memory device.

Abstract: A data storage apparatus includes a nonvolatile memory device including a plurality of memory blocks in which a plurality of word lines to which one or more pages are coupled are arranged, a data buffer configured to buffer data to be stored in the one or more pages of the nonvolatile memory device, and a processor configured to detect, when a sudden power off (SPO) occurs, one or more first pages in which an interference has occurred in a memory block in use and store data corresponding to the one or more first pages in which the interference has occurred among the data buffered in the data buffer in a backup memory block of the nonvolatile memory device.

Abstract: A method for arranging a plurality of message blocks in a lattice form and generating a message matrix includes deciding lengths of rows of the message matrix such that a length difference is equal to or less than a first critical point, deciding lengths of the message blocks such that a length difference is equal to or less than a second critical point, and arranging the message blocks in each row of the message matrix such that a length difference of columns of the message matrix is equal to or less than a third critical point.

Abstract: Semiconductor memory device and method of operating same includes reading data stored in memory cells of a page; performing an error correction loop (ECC loop) including performing an error checking and correcting operation (ECC) on the read data; determining a number of bit errors in the read data; and when the number of bit errors is greater than a maximum number of correctable bits, incrementing the number of ECC iterations (ECC count) and increasing the maximum number of correctable bits; storing the ECC count until the number of bit errors is less than the maximum number of correctable bits; and programming corrected data to the memory cells when the stored ECC count is more than preset number.

Abstract: A method of operating a data storage device includes setting program verify voltages for verifying whether memory cells of a nonvolatile memory device are programmed to desired program states; transmitting the set program verify voltages to the nonvolatile memory device; generating data patterns respectively corresponding to program states based on the program verify voltages; transmitting a data pattern corresponding to the program verify voltages to the nonvolatile memory device; and programming the memory cells with the transmitted data pattern.

Abstract: An encoding device includes a first encoder that generates a message matrix including a plurality of message blocks and a parity block having parity information of the plurality of message blocks, and a second encoder that adds row parity information and column parity information to the message matrix.

Abstract: A method for arranging a plurality of message blocks in a lattice form and generating a message matrix includes deciding lengths of rows of the message matrix such that a length difference is equal to or less than a first critical point, deciding lengths of the message blocks such that a length difference is equal to or less than a second critical point, and arranging the message blocks in each row of the message matrix such that a length difference of columns of the message matrix is equal to or less than a third critical point.

Abstract: A non-volatile memory device and a method for programming the same are disclosed. The non-volatile memory device includes first and second memory blocks, each of which includes a plurality of memory cells, each memory cell including a plurality of regions in which data is written, corresponding regions of the plurality of memory cells constituting a page; a data write unit, upon receiving a write signal and an address allocation signal, configured to write first data in a first page of the first memory block, and write second data in a first page of the second memory block; and a copy-back unit, upon receiving a chip idle signal and a copy-back control signal, configured to write the first data written in the first memory block into a second page of the second memory block.

Abstract: A program method of a semiconductor memory device includes performing a least significant bit (LSB) program operation for target LSB program cells of a selected page, increasing the threshold voltages of target most significant bit (MSB) program cells of the selected page before performing an MSB operation for the target MSB program cells, and performing the MSB program operation for the target MSB program cells after the increasing of the threshold voltages of the target MSB program cells.

Abstract: A method of programming a nonvolatile memory includes: applying a common program pulse to program cells within each page of a memory region including two or more pages; applying one or more different program pulses to the program cells within each page of the memory region, according to target threshold voltages of the program cells; and programming each page of the memory region such that the program cells have their own target threshold voltages.

Abstract: A semiconductor memory device includes a page buffer configured to store data read from a memory cell, a counter circuit configured to count the number of first data or second data in the read data for every read operation while the read operations are repeated a set number of times, and a control logic configured to determine the number of read operations and determine the read data of the memory cell based on the counted number.

Abstract: A method of operating a data storage device includes setting program verify voltages for verifying whether memory cells of a nonvolatile memory device are programmed to desired program states; transmitting the set program verify voltages to the nonvolatile memory device; generating data patterns respectively corresponding to program states based on the program verify voltages; transmitting a data pattern corresponding to the program verify voltages to the nonvolatile memory device; and programming the memory cells with the transmitted data pattern.

Abstract: A method of operating a data storage device including a nonvolatile memory device includes reading last programmed data from the nonvolatile memory device, detecting an error included in the data read in the reading, correcting the error of if the error is correctable, and reprogramming the corrected data to the nonvolatile memory device.

Abstract: Semiconductor memory device and method of operating same includes reading data stored in memory cells of a page; performing an error correction loop (ECC loop) including performing an error checking and correcting operation (ECC) on the read data; determining a number of bit errors in the read data; and when the number of bit errors is greater than a maximum number of correctable bits, incrementing the number of ECC iterations (ECC count) and increasing the maximum number of correctable bits; storing the ECC count until the number of bit errors is less than the maximum number of correctable bits; and programming corrected data to the memory cells when the stored ECC count is more than preset number.

Abstract: A method of operating a nonvolatile memory device comprises performing a read operation to read data stored in a first memory cell block including first unit groups; detecting a second unit group from among the first unit groups, the second unit group having a number of error bits included in the read data, which is greater than a set number of bits and equal to or smaller than a maximum allowable number of bits which can be corrected through an error checking and correction (ECC) processing; and after the second unit group is detected, performing a copyback operation for moving the data, that are stored in the first memory cell block, to a second memory cell block.

Abstract: A non-volatile memory device and a method for programming the same are disclosed. The non-volatile memory device includes first and second memory blocks, each of which includes a plurality of memory cells including a plurality of pages in which data is written; a data write unit, upon receiving a write signal and an address allocation signal, configured to write first data in a first page of the first memory block, and write second data in a first page of the second memory block; and a copy-back unit, upon receiving a chip idle signal and a copy-back control signal, configured to write the first data written in the first memory block into a second page of the second memory block.

Abstract: A method of programming a nonvolatile memory includes: applying a common program pulse to program cells within each page of a memory region including two or more pages; applying one or more different program pulses to the program cells within each page of the memory region, according to target threshold voltages of the program cells; and programming each page of the memory region such that the program cells have their own target threshold voltages.

Abstract: A semiconductor memory device includes a page buffer configured to store data read from a memory cell, a counter circuit configured to count the number of first data or second data in the read data for every read operation while the read operations are repeated a set number of times, and a control logic configured to determine the number of read operations and determine the read data of the memory cell based on the counted number.

Abstract: A program method of a semiconductor memory device includes performing a least significant bit (LSB) program operation for target LSB program cells of a selected page, increasing the threshold voltages of target most significant bit (MSB) program cells of the selected page before performing an MSB operation for the target MSB program cells, and performing the MSB program operation for the target MSB program cells after the increasing of the threshold voltages of the target MSB program cells.

Abstract: In a method of performing a read operation of a nonvolatile memory device, a selected bit line is precharged. A pass voltage is sequentially applied to all word lines. The pass voltage applied to a word line, selected from among all the word lines, is changed for a read voltage. The read voltage is applied to the selected word line. Data of a memory cell coupled to the selected word line is read.