Abstract: The present invention relates to the stabilization of an effective ingredient by using a mineral material. In the present invention, the effective ingredient can be stably supported using the mineral material, and a microcapsule obtained by the manufacturing method according to the present invention, when discharged to nature, causes no environmental problems due to encapsulation ingredients thereof being the same as soil ingredients, and thus can avoid micro-plastic issues.

Abstract: A camera module includes a housing, a movable body configured to move in a direction of an optical axis of the housing; a reinforcing member formed integrally on one surface of the movable body, and configured to increase a rigidity of the movable body; and a first buffer member formed in the reinforcing member, and configured to reduce an impactive force between the housing and the movable body.

Abstract: The present disclosure includes cationic carrier units comprising (i) a water soluble polymer, (ii) a positively charged carrier, (iii) a hydrophobic moiety, and (iv) a crosslinking moeity, wherein when the cationic carrier unit is mixed with an anionic payload (e.g., an RNA and/or DNA) that electrostatically interacts with the cationic carrier unit, the resulting composition self-organizes into a micelle encapsulating the anionic payload in its core. The cationic carrier units can also comprise a tissue specific targeting moiety, which would be displayed on the surface of the micelle. The disclosure also includes micelles comprising the cationic carrier units of the disclosure, methods of manufacture of cationic carrier units and micelles, pharmaceutical compositions comprising the micelles, and also methods of treating diseases or conditions comprising administering the micelles to a subject in need thereof.

Abstract: A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.

Abstract: A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.

Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.

Abstract: A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.

Abstract: A system for foreign object detection (FOD) in wireless power transfer is proposed. The system may include a balanced coil which is disposed between a transmitter coil and a receiver coil and which includes a Maxwell bridge circuit. The system may also include a temperature sensor configured to measure a temperature of the transmitter coil. The system may further include a processor configured to determine whether an FO is present between the transmitter coil and the receiver coil on the basis of voltage values detected at both ends of the bridge circuit. The FOD system can recognize the FO by finding a maximum resonant frequency at which a metal reacts using resonant frequency sweeping in a bridge circuit.

Abstract: A method for selectively recovering a rare earth element (REE) from an alloy includes applying a potential of from -3.5 V to 0 V to an electrochemical cell comprising a anode, a cathode, and an electrolyte, wherein (i) the anode comprises an alloy comprising a REE, (ii) the cathode comprises a noble metal, and (iii) the electrolyte comprises an alkali metal or alkaline earth metal salt and a nonaqueous solvent. Under the applied potential, at least some of the REE is oxidatively dissolved from the anode and is electrodeposited onto the cathode to form an REE deposit.

Abstract: Provided are a plasma reaction device capable of cooling a reactor body and a magnetic core by circulating cooling water, and a cooling method thereof, the plasma reaction device including an annular loop space therein, and a body cooling channel therein, a magnetic core having a primary coil to generate plasma by exciting a gas in the annular loop space, a cooling block being in thermal contact with the reactor body or the magnetic core, and having a block cooling channel therein, a connecting block having a first water inlet pipe and a first water outlet pipe at a side thereof to supply cooling water at a first temperature, and having a second water inlet pipe and a second water outlet pipe at another side thereof to collect the cooling water at a second temperature higher than the first temperature, and a cooling water circulation line mounted between the connecting block, the cooling block, and the reactor body.

Abstract: Provided are a cooling block that can be easily manufactured by forming vertical or horizontal flow paths in an integrated single block body through drilling, and a plasma reaction device having same, and may include: an integrated block body; a first vertical flow path formed in a vertical shape by passing through the inside of the block body from one surface of the block body; a first horizontal flow path passing through one portion of the first vertical flow path; a second horizontal flow path passing through the other portion of the first vertical flow path; a second vertical flow path passing through the first horizontal flow path and the second horizontal flow path; a first sealing stopper provided at a first point so that a refrigerant, having passed through the first vertical flow path, can branch in two ways and then merge into the second vertical flow path; and a second sealing stopper provided at a second point.

Abstract: Provided is a plasma reaction apparatus capable of preventing edge cracks of a magnetic core by dividing the core, the plasma reaction apparatus including a reactor body having a gas inlet at a side thereof, a plasma outlet at another side thereof, and an annular loop space therein, and a magnetic core provided in a shape surrounding at least a part of the reactor body, and having a primary coil to generate plasma by exciting a gas in the annular loop space, wherein the magnetic core includes a middle core layer, an upper core layer mounted on the middle core layer, and a lower core layer mounted under the middle core layer, wherein the upper core layer is divided into a first core layer and a second core layer to prevent edge cracks of the upper core layer by reducing an upper thermal deviation, and wherein the lower core layer is divided into a third core layer and a fourth core layer to prevent edge cracks of the lower core layer by reducing a lower thermal deviation.

Abstract: Provided is a plasma reaction device which can reduce a heating value through installation of a dual-coil type inductor in a resonant network circuit part, and a cooling method thereof. The plasma reaction device may include: a reactor part for exciting an input gas to be in a plasma state by using transformer coupled plasma; a resonant network circuit part electrically connected to the reactor part and including at least one inductor and at least one condenser; and a power supply part for applying power to the resonant network circuit part, wherein the inductor may comprise: a first coil which is formed between a first terminal and a second terminal and at least a portion of which is spirally wound to form a first cylindrical reception space inward; and a second coil which is formed between the first terminal and the second terminal to be connected to the first coil in series, and spirally wound in the first cylindrical reception space.

Abstract: Provided are a systolic array structure and a device including the same. The systolic array structure includes a processing element (PE) array in which a plurality of PEs are connected. The systolic array structure performs a multiply and accumulate (MAC) operation by applying differential values as first and second inputs which are input to each of the PEs.

Abstract: A method of manufacturing a semiconductor device includes forming a stacked structure including trenches having different depths, forming an insulating layer on the stacked structure to fill the trenches, and forming a plurality of protrusions located corresponding to locations of the trenches by patterning the insulating layer. The method also includes forming insulating patterns filling the trenches, respectively, by planarizing the patterned insulating layer including the plurality of protrusions.

Abstract: The voltage monitoring circuit according to one embodiment of the present invention comprises: a clamping unit for clamping the voltage of input power supplied from a power source to base voltage, and outputting to an MCU; and a switch unit for cutting off the input power from the power source if an anomaly occurs with the base voltage of the clamping unit.

Abstract: The present invention relates to a pop count-based deep learning neural network computation method, a multiply accumulator, and a device thereof. The computation method according to an exemplary embodiment of the present invention is a computation method for a deep learning neural network, including a step of generating one-hot encoding codes according to the type of first multiplication result values for a multiplication (first multiplication) of weights (W) and input values (A); a step of performing a pop-count for each generated code; and a step of accumulating result values for a constant multiplication (second multiplication) between each type of the first multiplication result value and each count value of the pop-count which are different constant values.

Abstract: A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.