Abstract: A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a plurality of gate electrodes that are stacked on a substrate and are spaced apart from each other in a vertical direction and a channel region extending through the plurality of gate electrodes in the vertical direction. Each of the plurality of gate electrodes may include a first conductive layer defining a recess recessed toward the channel region, and a second conductive layer in the recess defined by the first conductive layer. A first concentration of impurities in the second conductive layer may be higher than a second concentration of the impurities in the first conductive layer, and the impurities may include nitrogen (N).

Abstract: A semiconductor memory device may include a substrate, gate electrode structures stacked on the substrate, insulation patterns between the gate electrode structures, vertical channels penetrating through the gate electrode structures and the insulation patterns, and a data storage pattern. The vertical channels may be electrically connected to the substrate. The data storage pattern may be arranged between the gate electrode structures and the vertical channels. Each of the gate electrode structures may include a barrier film, a metal gate, and a crystal grain boundary plugging layer. The crystal grain boundary plugging layer may be between the barrier film and the metal gate.

Abstract: An electrode member according to an embodiment includes a first resin layer; and an electrode layer on the first resin layer, wherein the first resin layer has a thickness in the range of 1 ?m to 25 ?m.

Abstract: An air conditioner includes a cabinet, a particle sensing unit coupled to the cabinet and configured to measure a particle concentration of an outside, and an inlet provided at the cabinet and configured to communicate with the outside so that particles flow into the particle sensing unit, and the particle sensing unit includes a first particle sensor configured to sense particles flowing in through the inlet, and a second particle sensor coupled to form a connection path in which particles move between the first particle sensor and the second particle sensor to sense the particles passing through the first particle sensor. The air conditioner allows the sensing of fine particles and ultrafine particles due to a plurality of particle sensors.

Abstract: An air conditioner includes a cabinet forming an external appearance of the air conditioner and is provided with an opening, and a cover to open and close the opening. The cover includes a cover body to cover the opening and includes a first cover body and a second cover body that are spaced apart from each other, and a spacing rib provided between the first cover body and the second cover body such that the first cover is spaced apart from the second cover body.

Abstract: An electronic device is provided. The electronic device includes a housing, a touch screen display that includes a first edge and a second edge, a microphone, at least one speaker, a wireless communication circuit, a memory, and a processor operably connected with the touch screen display, the microphone, the at least one speaker, the wireless communication circuit, and the memory. The processor is configured to output a home screen including a plurality of application icons in a matrix pattern. The processor is configured receive an input from the first edge to the second edge. The processor is configured output a user interface on the touch screen display that includes a button that allows user to call a first operation and a plurality of cards. To call the first operation the processor is configured to receive a user input, transmit data and receive a response, and perform a task.

Abstract: A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.

Abstract: The present invention relates to a device for testing an angle of view of a camera. The present invention may comprise: a first light source which is arranged to face an image sensor, and has a first width and a second width longer than the first width; and a second light source and a third light source which are disposed on both sides of the image sensor in the direction of the first width, respectively. The present invention can prevent an interference of the light source or a bracket supporting the light source by reducing the number of light sources. In addition, since it is possible to measure the angle of view of a camera by reducing the light sources, the present invention can reduce the manufacturing costs of a device for testing an angle of view of a camera.

Abstract: Provided is a use of the prophylaxis, amelioration or therapy of intractable epilepsy, for example, Focal Cortical Dysplasia (FCD).

Abstract: A memory device may include a gate structure including a plurality of gate electrode layers and a plurality of insulating layers alternately stacked on a substrate, a plurality of etching stop layers, extending from the insulating layers respectively, being on respective lower portions of the gate electrode layers; and a plurality of contacts connected to the gate electrode layers above upper portions of the etching stop layers, respectively, wherein respective ones of the etching stop layers include an air gap therein.

Abstract: Disclosed is a touch window including a substrate, and a sensing electrode on the substrate. The sensing electrode comprises a plurality of sensing parts having directionalities different from each other.

Abstract: A deposition apparatus includes a chamber, a plate in the chamber and configured support a substrate, a deposition unit configured to perform a deposition process in-situ in the chamber, and a UV annealing unit configured to perform a first ultraviolet (UV) and a second ultraviolet (UV) annealing process in-situ in the chamber. The deposition process may include sequentially depositing a first sacrificial layer, a first oxide layer, a second sacrificial layer and a second oxide layer on the substrate. The first UV annealing process may be performed on the first oxide layer after the first oxide layer is deposited. The second UV annealing process may be different from the first UV annealing process and may be performed on the second oxide layer after the second oxide layer is deposited.

Abstract: An unmanned aerial vehicle (UAV) is provided. The UAV includes a first guard grill, a second guard grill configured to be removably combined with the first guard grill and form an external structure and an inner space of the UAV with the first guard grill, a housing configured to include a central portion located in the center of the inner space and embed a processor and a navigation system, one or more propelling elements configured to be located the inner space and be disposed around the central portion, and a plurality of motor assemblies configured to be located in the inner space and drive the propelling elements while being electrically connected with the processor. When viewed from the outside of the external structure, the propelling elements are partially covered by at least one of the first guard grill or the second guard grill.

Abstract: Disclosed are a body of an unmanned aerial vehicle and an unmanned aerial vehicle including the same. The body includes a housing arranged in a first direction and including at least four housing sidewalls and an opening defined by the housing sidewalls and configured to receive a battery pack, a propeller support extending a specific distance from each housing sidewall in a second direction away from the center of the housing and perpendicular to the first direction and having, on a distal end, a motor and a propeller connected to the motor, and a PCB disposed on at least one of the housing sidewalls and associated with operating the motor and the propeller.

Abstract: A deposition apparatus includes a chamber, a plate in the chamber and configured support a substrate, a deposition unit configured to perform a deposition process in-situ in the chamber, and a UV annealing unit configured to perform a first ultraviolet (UV) and a second ultraviolet (UV) annealing process in-situ in the chamber. The deposition process may include sequentially depositing a first sacrificial layer, a first oxide layer, a second sacrificial layer and a second oxide layer on the substrate. The first UV annealing process may be performed on the first oxide layer after the first oxide layer is deposited. The second UV annealing process may be different from the first UV annealing process and may be performed on the second oxide layer after the second oxide layer is deposited.

Abstract: A memory device may include a gate structure including a plurality of gate electrode layers and a plurality of insulating layers alternately stacked on a substrate, a plurality of etching stop layers, extending from the insulating layers respectively, being on respective lower portions of the gate electrode layers; and a plurality of contacts connected to the gate electrode layers above upper portions of the etching stop layers, respectively, wherein respective ones of the etching stop layers include an air gap therein.

Abstract: An air conditioner includes a main body, a fan configured to cause air to flow through the main body, and a water reservoir detachably disposed on an upper portion of the main body. A humidifying fabric member is disposed inside the main body and configured to receive water from the water reservoir. A water collecting tank is configured to collect water that flows down from the humidifying fabric member. In addition, a pump is configured to pump the water in the water collecting tank to the water reservoir through a suction hole. A bottom of the water collecting tank is formed to be downwardly inclined toward one portion of the bottom and the suction hole of the pump is disposed adjacent to the one portion.

Abstract: An air conditioner and a method for controlling the same are disclosed. The air conditioner is able to operate in an efficient cooling cycle while simultaneously guaranteeing superior cooling performance in a low-temperature operation region. In the air conditioner, an airflow directing apparatus, which is installed in an outdoor unit, suppresses not only natural convection of the air, but also heat exchange between the condenser and outdoor air by the blowing fan, such that the air conditioner forms a normal cooling cycle by guaranteeing condenser pressure. The air conditioner guarantees cooling performance of a low-temperature operation region by adjusting the amount of outdoor air flowing through blade control of the airflow directing apparatus, and operates in an efficient cooling cycle, resulting in acquisition of compressor reliability.

Abstract: A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.