Abstract: Provided is a phase change RAM. The phase change RAM includes an electrode, a first layer located on the electrode, and a second layer located on the first layer. The first layer includes a locally formed phase change material region. In addition, a method of manufacturing a phase change RAM is provided. The method includes forming an electrode, forming a first layer on the electrode, forming a second layer on the first layer, and forming a phase change material region locally in the first layer due to a voltage applied to the second layer.

Abstract: A semiconductor device may include first row lines each extending in a first direction, column lines each extending in a second direction crossing the first direction, second row lines each extending in the first direction, a plurality of first memory cells respectively coupled between the first row lines and the column lines, each of the plurality of first memory cells including a first variable resistance layer and a first dielectric layer positioned between the first variable resistance layer and a corresponding one of the first row lines, and a plurality of second memory cells respectively coupled between the second row lines and the column lines, each of the plurality of second memory cells including a second variable resistance layer and a second dielectric layer positioned between the second variable resistance layer and a corresponding one of the second row lines.

Abstract: A semiconductor device may include: a substrate including a peripheral circuit region and a cell region having a first cell region and a second cell region, the second cell region being farther from the peripheral circuit region than the first cell region; a plurality of memory cells disposed at intersection regions between first conductive lines and second conductive lines, respectively, the memory cells including a first memory cell disposed in the first cell region and a second memory cell disposed in the second cell region, wherein a first electrode layer of the first memory cell and a second electrode layer of the second memory cell include a conductive material, and wherein the first electrode layer further includes a first dopant that increases a resistivity of the conductive material.

Abstract: A cleaning system is provided. The cleaning system includes a robot cleaner and a station. The robot cleaner includes a pad fixing part on which a cleaning pad is detachably mounted, a lifter to lift a part of the robot cleaner at which the pad fixing part is positioned, and a pad detacher to detach the cleaning pad mounted on the pad fixing part. The station includes a pad storage box in which a cleaning pad that is to be provided to the robot cleaner is stored, a pad coupling part on which a cleaning pad that is to be coupled to the robot cleaner is rested, and a pad supplier to supply the cleaning pad stored in the pad storage box to the pad coupling part.

Abstract: A cleaning system is provided. The cleaning system includes a robot cleaner and a station. The robot cleaner includes a pad fixing part on which a cleaning pad is detachably mounted, a lifter to lift a part of the robot cleaner at which the pad fixing part is positioned, and a pad detacher to detach the cleaning pad mounted on the pad fixing part. The station includes a pad storage box in which a cleaning pad that is to be provided to the robot cleaner is stored, a pad coupling part on which a cleaning pad that is to be coupled to the robot cleaner is rested, and a pad supplier to supply the cleaning pad stored in the pad storage box to the pad coupling part.

Abstract: A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.

Abstract: A semiconductor device may include first row lines each extending in a first direction, column lines each extending in a second direction crossing the first direction, second row lines each extending in the first direction, a plurality of first memory cells respectively coupled between the first row lines and the column lines, each of the plurality of first memory cells including a first variable resistance layer and a first dielectric layer positioned between the first variable resistance layer and a corresponding one of the first row lines, and a plurality of second memory cells respectively coupled between the second row lines and the column lines, each of the plurality of second memory cells including a second variable resistance layer and a second dielectric layer positioned between the second variable resistance layer and a corresponding one of the second row lines.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a write circuit and a memory cell. The write circuit is suitable for generating a first write current having a lower level than a melting current and a second write current having a higher level than the melting current during a set program operation. The memory cell is suitable for storing a data value corresponding to a write data signal, based on the first and second write currents.

Abstract: The present disclosure relates to a cleaner including a main body, a brush head connected to the main body by a connection pipe and having a suction port, and a brush drum rotatably mounted to the brush head, wherein the brush drum includes a shaft unit rotatably mounted to the brush head, a cylindrical elastic member provided to surround an outer circumferential surface of the shaft unit, a brush provided in a cylindrical shape to surround an outer circumferential surface of the elastic member and formed of soft bristles, a pair of brackets assembled at both ends of the shaft unit and allowing the shaft unit to be rotatably mounted to the brush head, a handle unit detachably mounted on the brush head and detachably mounted to one of the pair of brackets.

Abstract: A robot cleaner including: a main body, a driving unit configured to move the main body, and a suction device provided in the main body and configured to suction outside foreign substances, and the suction device may include a first suction member having a suction port provided at a bottom surface of the main body and configured to suction the foreign substances, and at least one second suction member formed to move relative to the first suction member and having a suction port configured to suction the foreign substances.

Abstract: A cleaner includes a case which includes an inlet for suctioning in rubbish on a surface to be cleaned, a driver which is provided inside the case and includes a motor which generates power, a drum body which is provided in the inlet and configured to receive the power from the driver and rotate, and a drum blade arranged in an outer circumferential direction of the drum body and formed with a blade air current hole through which air suctioned in through the inlet passes.

Abstract: A semiconductor memory includes: a first line; a second line spaced apart from the first line and extending in a first direction; a third line spaced apart from the second line and extending in a second direction; a first memory cell disposed between the first and second lines at an intersection region of the first and second lines, the first memory cell including a first selection element layer, a first electrode, and a first insert electrode interposed between the first selection element layer and the first electrode; and a second memory cell disposed between the second and third lines at an intersection region of the second and third lines, the second memory cell including a second selection element layer, a second electrode, and a second insert electrode interposed between the second selection element layer and the second electrode.

Abstract: A grease filter, which includes a first channel having an inlet portion through which oil particles flow in, and a first guide unit configured to guide the oil particles flowing in through the inlet portion, and a second channel having an outlet portion through which the oil particles and air current flowing in through the inlet portion is discharged into the outside, and at least one second guide unit configured to guide the oil particles and air current to be discharged through the outlet portion. Here, the first channel and the second channel are detachably provided. The grease filter can be easily repaired and maintained, and collection efficiency can be improved due to such a configuration.

Abstract: A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.

Abstract: An operating method of an electronic device including a semiconductor memory, the operating method includes selecting one of a plurality of memory cells during a set operation, applying a write current having a slow quenching pattern to the selected memory cell, monitoring a cell current flowing through the selected memory cell, generating a discharge control signal corresponding to a result of the monitoring, and discharging the write current in response to the discharge control signal.

Abstract: By improving a structure of a discharge flow path of a robot cleaner, it may be possible to minimize a loss of a suction force, thereby reducing a noise without deteriorating cleaning efficiency. The robot cleaner includes a fan motor configured to generate a suction force, a first housing in which the fan motor is accommodated, a second housing in which the first housing is accommodated, and a chamber positioned between the first housing and the second housing, wherein a plurality of slits are formed in the chamber.

Abstract: A suction nozzle, and a vacuum cleaner, and a robot cleaner includes a housing having a suction port formed on a bottom surface thereof and a suction flow path formed on an inside thereof to communicate with the suction port, and a vibration cleaning unit arranged on the suction flow path to pass therethrough air including pollutants that flows in through the suction port, wherein the vibration cleaning unit includes a vibration source, a vibration transfer frame configured to accommodate the vibration source, and a vibration bar configured to receive vibration transferred from the vibration transfer frame to resonate.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a write circuit and a memory cell. The write circuit is suitable for generating a first write current having a lower level than a melting current and a second write current having a higher level than the melting current during a set program operation. The memory cell is suitable for storing a data value corresponding to a write data signal, based on the first and second write currents.

Abstract: A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.

Abstract: A semiconductor memory includes: a first line; a second line spaced apart from the first line and extending in a first direction; a third line spaced apart from the second line and extending in a second direction; a first memory cell disposed between the first and second lines at an intersection region of the first and second lines, the first memory cell including a first selection element layer, a first electrode, and a first insert electrode interposed between the first selection element layer and the first electrode; and a second memory cell disposed between the second and third lines at an intersection region of the second and third lines, the second memory cell including a second selection element layer, a second electrode, and a second insert electrode interposed between the second selection element layer and the second electrode.