Abstract: A thin film transistor includes a substrate with a trench having first and second sides and a bottom, and a gate electrode at one of the first and second sides of the trench. The thin film transistor further includes a gate insulating layer on the entire surface of the substrate including the gate electrode, and an active layer on the gate insulating layer along the trench, the active layer having source and drain regions substantially outside the trench.

Abstract: A thin film transistor and a method for fabricating the same are disclosed, in which an offset region is affected or biased by a gate voltage to increase on-current, thereby improving on/off characteristic of a device. A first semiconductor layer is formed on a substrate, and insulating layer patterns are formed at both ends of the first semiconductor layer. A second semiconductor layer is formed on the first semiconductor layer and the insulating layer patterns. A gate insulating film is formed on the first and second semiconductor layers and the insulating layer patterns, and an active layer formed on the gate insulating film.

Abstract: A CMOS device includes a first conductivity type semiconductor substrate having an active region, the active region including two second conductivity type of impurity regions and a first channel region between the two second conductivity type impurity regions, a field insulation region on the semiconductor substrate for electrical isolation of the active region from other adjacent active regions, a second conductivity type semiconductor layer on the field insulation layer, the semiconductor layer including two first conductivity type impurity regions and a second channel region between the two first conductivity type impurity regions, and a gate electrode over the first channel region in the active region and the second channel region in the semiconductor layer.

Abstract: A thin film transistor includes a substrate with a trench having first and second sides and a bottom, and a gate electrode at one of the first and second sides of the trench. The thin film transistor further includes a gate insulating layer on the entire surface of the substrate including the gate electrode, and an active layer on the gate insulating layer along the trench, the active layer having source and drain regions substantially outside the trench.

Abstract: A thin film transistor that can have a greater on/off current ratio is disclosed. The thin film transistor includes a substrate, a first gate electrode section formed on a predetermined region of the substrate, a second gate electrode section formed on a predetermined portion of the first gate electrode section, a third gate electrode section formed on the second gate electrode section parallel to, and spaced from the first gate electrode section. A gate electrode is formed by the first, second and third gate electrode sections. A gate insulating film is formed on exposed surfaces of the first, second and third gate electrode sections and a semiconductor layer is formed on the gate insulating film and the substrate. A first impurity region is formed in the semiconductor layer on one side of the first gate electrode section and a second impurity region is formed in the semiconductor layer on the second and third gate electrode sections on the other side of the first gate electrode section.

Abstract: A thin film transistor and a fabricating method for a thin film transistor is disclosed which may be suitable for memory cells of a static random access memory (SRAM) or other devices. A thin film transistor according to this invention may include an insulation substrate, a gate electrode formed to have a negative slope at one side thereof on the insulation substrate, an insulation film side wall formed at the other side of the gate electrode, a gate insulation film formed on the insulation substrate, gate electrode and side wall, a semiconductor layer formed on the gate insulation film, impurity diffusion regions selectively formed within the semiconductor layer over the gate electrode, the side wall and the insulation substrate on the other side of the gate electrode, and a channel region formed within the semiconductor layer at the side of the gate electrode having the negative slope.

Abstract: A thin film transistor and a method which forms a channel region (c), a lightly doped drain region (LDD) region and, optionally, an offset region (o), in a portion of a semiconductor layer which is adjacent a sidewall of the gate electrode without the use of photo masks, thereby increasing the permissible degree of miniaturization and improving production yield.