Abstract: An data driver for driving an LCD device includes a modulator that generates modulated data from input data; and a control circuit to selects between converting the modulated data to first analog data of a driving output and converting the input data to second analog data of the driving output, and to supply the driving output to the plurality of data lines. The driving output may provide a gray-to-gray response time of the LCD device substantially the same as one of a black-to-white and a white-to-black response time of the LCD device by reducing actual liquid crystal response time of the LCD device.

Abstract: A liquid crystal display includes an insulating substrate having a pixel portion divided into a thin film transistor region and a storage region, a first active layer formed on the substrate to cover at least the thin film transistor region, and a storage electrode formed on the first active layer to selectively cover the storage region.

Abstract: A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and source and drain electrodes spaced apart from each other with respect to the gate electrode and extending along the first direction, wherein each of the plurality of active layers includes a channel region overlapped with the gate electrode, a source region, a drain region, and lightly doped drain (LDD) regions, one between the channel region and the source region and another one between the channel region and the drain region, wherein the LDD regions of the adjacent active layers have different lengths from each other.

Abstract: A liquid crystal display and a method for fabricating the same are disclosed. The method for fabricating a liquid crystal display includes preparing an insulating substrate defining a pixel portion divided into a thin film transistor region and a storage region, sequentially forming a polycrystalline silicon film and a storage electrode film on an entire surface of the substrate, selectively patterning the storage electrode film and the polycrystalline silicon film to form a pixel pattern that covers the pixel portion, and selectively removing the storage electrode film in the thin film transistor region to simultaneously form a first active layer in the thin film transistor region and form a storage electrode in the storage region, wherein the active layer is formed of the polycrystalline silicon film and the storage electrode is formed of the storage electrode film.

Abstract: A thin film transistor including: an active layer on a substrate, the active layer having at least two unit channels; and source and drain electrodes on the active layer, wherein an interval D between each of the channels is larger than a unit channel width W.

Abstract: A backlight unit, in which an incident surface of a light-guiding plate is formed in a shape of a curve, or a curve-shaped structure is formed in a housing to improve the light efficiency. The backlight unit includes a light source emitting light; a housing surrounding the light source; a light-guiding plate guiding the light emitted from the light source to an LCD panel, wherein the light-guiding plate has an incident surface formed in a shape of a curve; and a reflective sheet formed under the light-guiding plate.

Abstract: An array substrate for an LCD device and a method of fabricating the same are disclosed. The array substrate includes: a substrate defining a display area and a non-display area; an n-type driving TFT and a p-type driving TFT in the non-display area; a switching TFT in the display region; a storage capacitor in the display region, the storage capacitor including first to third storage layers sequentially layered with intervening insulating layers, wherein the first storage layer contacts a first semiconductor layer under the first storage layer; and a pixel electrode in the display region, the pixel electrode connected to the switching TFT.

Abstract: An LCD device and a method of fabricating the same are provided. The LCD device comprises a first substrate divided into a pixel unit and a circuit unit. Active patterns are disposed in the pixel unit and the circuit unit of the first substrate. A first insulating film is disposed on the first substrate. Gate electrodes are disposed in the pixel unit and the circuit unit of the first substrate, and common lines are disposed in the pixel unit of the first substrate. First contact holes and second contact holes are disposed in regions of the first insulating film, the first interlayer insulating film and the second interlayer insulating film. Source electrodes and drain electrodes electrically connect to the source regions and the drain regions of the active patterns through the first contact holes and the second contact holes.

Abstract: An analog-to-digital converter (ADC) is provided to determine a digital output value according to whether electric current flows between a plurality of probes, to which an input voltage is applied, and a plurality of electrodes. Therefore, high resolution and high speed operation is possible, but with lower power consumption.

Abstract: An array substrate for a liquid crystal display (LCD) device includes a substrate including a display region and a non-display region, a driving circuit in the non-display region, at least a first thin film transistor (TFT) in the display region, a storage capacitor in the display region including a first storage electrode, a second storage electrode, and a third storage electrode, wherein the first storage electrode includes a first semiconductor layer and a counter electrode, and the third storage electrode includes a first transparent electrode pattern and a first metal pattern, a gate line and a data line crossing each other to define a pixel region in the display region, and a pixel electrode connected to the first TFT in the pixel region.

Abstract: A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and source and drain electrodes spaced apart from each other with respect to the gate electrode and extending along the first direction, wherein each of the plurality of active layers includes a channel region overlapped with the gate electrode, a source region, a drain region, and lightly doped drain (LDD) regions, one between the channel region and the source region and another one between the channel region and the drain region, wherein the LDD regions of the adjacent active layers have different lengths from each other.

Abstract: A thin film transistor including: an active layer on a substrate, the active layer having at least two unit channels; and source and drain electrodes on the active layer, wherein an interval D between each of the channels is larger than a unit channel width W.

Abstract: A liquid crystal display and a method for fabricating the same are disclosed.

Abstract: A method for fabricating a liquid crystal display (LCD) device includes providing a first substrate including a pixel portion and a circuit portion, the circuit portion having first and second regions; forming an active pattern and a first gate insulation film at the pixel portion and the circuit portion and forming a storage electrode on a portion of the active pattern of the pixel portion; forming a second gate insulation film on the first substrate; forming a gate electrode at the first region and forming p+ source and drain regions at portions of the active pattern of the first region; forming a gate electrode at the pixel portion and the second region, and forming a common line at the pixel portion; forming n+ source and drain regions at the pixel portion and at a portion of the active pattern of the second region; and joining the first and second substrates.

Abstract: Disclosed is a liquid crystal display (LCD) device having gate and data driving elements with improved heat dissipation properties. The driving elements each have the following: a source and a drain electrode, each with contact holes that provide electrical contact with an active area formed on the driving element's substrate; multiple separate channels between the source and the drain; and a gate electrode formed crossing the multiple channels. Also formed are dummy contact holes that allow the metal of the electrodes to penetrate to a layer below the active layer without contacting it. The dummy contact hole provides a thermally conductive channel whereby heat that would otherwise build up in the channels, and degrade the performance of the driving element, is conducted through the dummy contact hole and radiated away by the electrode metal.

Abstract: An analog-to-digital (AD) converter and a voltage detecting device thereof are provided. The AD converter includes at least one voltage detecting device which outputs a signal of a frequency determined based on a magnitude of an input voltage using a resonance frequency of a resonator. The AD converter determines a digital output value depending on the output signal from the voltage detecting device. Therefore, the AD converter can achieve a high resolution and a high speed with far less power consumption.

Abstract: A method for fabricating a liquid crystal display (LCD) device includes providing a first substrate including a pixel portion and a circuit portion, the circuit portion having first and second regions; forming an active pattern and a first gate insulation film at the pixel portion and the circuit portion and forming a storage electrode on a portion of the active pattern of the pixel portion; forming a second gate insulation film on the first substrate; forming a gate electrode at the first region and forming p+ source and drain regions at portions of the active pattern of the first region; forming a gate electrode at the pixel portion and the second region, and forming a common line at the pixel portion; forming n+ source and drain regions at the pixel portion and at a portion of the active pattern of the second region; and joining the first and second substrates.

Abstract: A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and source and drain electrodes spaced apart from each other with respect to the gate electrode and extending along the first direction, wherein each of the plurality of active layers includes a channel region overlapped with the gate electrode, a source region, a drain region, and lightly doped drain (LDD) regions, one between the channel region and the source region and another one between the channel region and the drain region, wherein the LDD regions of the adjacent active layers have different lengths from each other.

Abstract: A thin film transistor including: an active layer on a substrate, the active layer having at least two unit channels; and source and drain electrodes on the active layer, wherein an interval D between each of the channels is larger than a unit channel width W.

Abstract: A polysilicon liquid crystal display (LCD) device having a large width channel includes a buffer layer formed on a substrate, an active layer formed on the buffer layer and having a plurality of heat releasing parts, a gate line formed in a width direction of the active layer, at least one heat releasing path formed in each of the plurality of heat releasing parts, source and drain electrodes symmetrically formed at both sides of the active layer, and a contact hole connecting the source and drain electrodes and the active layer.