Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Abstract: A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A memory cell includes: a substrate; an active layer spaced apart from a surface of the substrate and extending in a direction which is parallel to the surface of the substrate; a bit line coupled to one side of the active layer and extending in a direction perpendicular to the surface of the substrate; a capacitor coupled to another side of the active layer and spaced apart from the surface of the substrate; and a word line vertically spaced apart from the active layer and extending in a direction intersecting with the active layer, wherein the word line includes a first notch-shaped sidewall and a second notch-shaped sidewall that face each other.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A memory cell includes: a substrate; an active layer spaced apart from a surface of the substrate and extending in a direction which is parallel to the surface of the substrate; a bit line coupled to one side of the active layer and extending in a direction perpendicular to the surface of the substrate; a capacitor coupled to another side of the active layer and spaced apart from the surface of the substrate; and a word line vertically spaced apart from the active layer and extending in a direction intersecting with the active layer, wherein the word line includes a first notch-shaped sidewall and a second notch-shaped sidewall that face each other.

Abstract: A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Abstract: A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A memory cell includes: a substrate; an active layer spaced apart from a surface of the substrate and extending in a direction which is parallel to the surface of the substrate; a bit line coupled to one side of the active layer and extending in a direction perpendicular to the surface of the substrate; a capacitor coupled to another side of the active layer and spaced apart from the surface of the substrate; and a word line vertically spaced apart from the active layer and extending in a direction intersecting with the active layer, wherein the word line includes a first notch-shaped sidewall and a second notch-shaped sidewall that face each other.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Abstract: A vertical transistor and a method for forming the same. The vertical transistor includes a semiconductor substrate having pillar type active patterns formed on a surface thereof; first junction regions formed in the surface of the semiconductor substrate on both sides of the active patterns; screening layers formed on sidewalls of the first junction regions; second junction regions formed on upper surfaces of the active patterns; and gates formed on sidewalls of the active patterns including the second junction regions to overlap with at least portions of the first junction regions.

Abstract: A vertical transistor and a method for forming the same. The vertical transistor includes a semiconductor substrate having pillar type active patterns formed on a surface thereof; first junction regions formed in the surface of the semiconductor substrate on both sides of the active patterns; screening layers formed on sidewalls of the first junction regions; second junction regions formed on upper surfaces of the active patterns; and gates formed on sidewalls of the active patterns including the second junction regions to overlap with at least portions of the first junction regions.

Abstract: A vertical transistor and a method for forming the same. The vertical transistor includes a semiconductor substrate having pillar type active patterns formed on a surface thereof; first junction regions formed in the surface of the semiconductor substrate on both sides of the active patterns; screening layers formed on sidewalls of the first junction regions; second junction regions formed on upper surfaces of the active patterns; and gates formed on sidewalls of the active patterns including the second junction regions to overlap with at least portions of the first junction regions.

Abstract: A method for forming a semiconductor device having recess channel includes forming a hard mask film pattern for exposing first regions for forming the trenches on a semiconductor substrate; forming first trenches by a first etching process using the hard mask film pattern as a mask, and removing the hard mask film pattern; forming a barrier film on the semiconductor substrate including the first trenches; forming an ion implantation mask film for exposing the first trenches on the barrier film; forming an ion implantation region in the semiconductor substrate below the first trenches using the ion implantation mask film and the barrier film; forming bulb-shaped second trenches by a second etching process using the ion implantation mask film and the barrier film as a mask, so that bulb-type trenches for recess channels, each including the first trench and the second trench, are formed; and removing the ion implantation mask film and the barrier film.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device suitable for preventing a threshold voltage of a recess gate from decreasing due to a voltage of an adjacent storage node comprises a semiconductor substrate having an active region which includes a gate area and a storage node contact area and is recess in the gate area; a device isolation structure formed in the semiconductor substrate to define the active region and having a shield layer therein; a recess gate formed in the gate area of the semiconductor substrate; and a storage node formed to be connected with the storage node contact area of the active region.

Abstract: A vertical transistor and a method for forming the same. The vertical transistor includes a semiconductor substrate having pillar type active patterns formed on a surface thereof; first junction regions formed in the surface of the semiconductor substrate on both sides of the active patterns; screening layers formed on sidewalls of the first junction regions; second junction regions formed on upper surfaces of the active patterns; and gates formed on sidewalls of the active patterns including the second junction regions to overlap with at least portions of the first junction regions.