Abstract: An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal silicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.

Abstract: Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

Abstract: Provided is a data storage apparatus using current switching in a metal oxide layer. The data storage apparatus includes a substrate; a lower electrode layer disposed on the substrate; a metal oxide layer disposed on the lower electrode layer; a probe tip disposed on the metal oxide layer opposite the lower electrode layer and for scanning a local region of the metal oxide layer in units of nanometer, wherein the probe tip applies a write voltage to the local region of the metal oxide layer so that the resistance of the local region is sharply changed until a resistive state of the local region is switched from a first state to a second state or measures current flowing through the local region according to the resistive state and reads data stored in the local region; a driver for transferring the position of the probe tip to the local region of the metal oxide layer; and a controller for controlling the probe tip and the driver.

Abstract: Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.

Abstract: Embodies of peripheral a wireless relay system apparatus and method for a multi-path interference removing using by same channel frequency is shown and described, which purpose of the present invention is to overcome extension of service coverage and a dead spot with amplifying same channel frequency, a problem in doing the relay, system wireless relay system was a same frequency interference of RF (Radio Frequency) output is become feedback radiating from tx antenna to rx antenna of the relay system, the wireless relay system apparatus and method effectively eliminates the same frequency interference so that it can ensure an additional system gain and easy to set up relatively to general same frequency relay system.

Abstract: Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode.

Abstract: Provided are a high density semiconductor memory device capable of precisely reading data by suppressing the occurrence of a leakage current due to the high-integration of the semiconductor memory device, and a method for manufacturing the semiconductor memory device. The high density semiconductor memory device includes: source and drain electrodes disposed over a substrate, and forming a Schottky junction with a channel region; and a floating gate disposed over the substrate of the channel region, and configured with a plurality of nanodots. The nanodots may be formed of a silicon compound or any material that can be charged.

Abstract: Provided is a method for fabricating a Schottky barrier tunnel transistor (SBTT) that can fundamentally prevent the generation of a gate leakage current caused by damage of spacers formed on both sidewalls of a gate electrode. The method for fabricating a Schottky barrier tunnel transistor, which includes: a) forming a silicon pattern and a sacrificial pattern on a buried oxide layer supported by a support substrate; b) forming a source/drain region on the buried oxide layer exposed on both sides of the silicon pattern, the source/drain region being formed of a metal layer and being in contact with both sidewalls of the silicon pattern; c) removing the sacrificial pattern to expose the top surface of the silicon pattern; and d) forming a gate insulating layer and a gate electrode on the exposed silicon pattern.

Abstract: The present invention relates to a Radio Frequency Repeater to prevent oscillation with canceling a feedback interference signal between transmitting and receiving antenna with built-in transmitting and receiving antenna in wireless mobile communication repeater. A radio frequency repeater for canceling a feedback interference signal has a downlink path from a base station to a terminal and an uplink path from a terminal to a base station, and said downlink path and said uplink path is separated and combination by a duplexer.

Abstract: A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.

Abstract: A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, forming a conductive compound containing layer over the gate insulation layer, etching the conductive compound containing layer and the gate insulation layer to form a gate structure, forming a metal layer over the resultant structure obtained after the etching, and letting the metal layer to react with silicon from the substrate to form source and drain regions comprising a metal silicide layer over the substrate exposed on both sides of the gate structure, wherein the conductive compound containing layer does not react with the metal layer.

Abstract: A system and method to detect angular rotation, linear displacement and/or surface deformations is presented. The method is based on the ability of a linear polarized light to interact with magnetic materials and to change its polarization angle due to Faraday effect. A basic structure of the system consists of a magneto-optic (MO) film with a two-domain structure and a single domain wall which are generated by gradient magnetic field produced by opposite polarity permanent magnets placed near the film. An AC magnetic field applied perpendicular to the MO film surface causes the magnetic domain wall in the MO film to oscillate at the same frequency. This leads to a detected output AC modulated signal. By measuring the temporal changes in this signal, information on angular rotation, linear displacement and/or surface deformation can be obtained.

Abstract: A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on the channel region, with a gate dielectric layer interposed therebetween. Positive (+), 0 or negative (?) gate voltage is selectively applied to the gate, the channel becomes off-state when the gate voltage between a negative threshold voltage and a positive threshold voltage is applied, and the channel becomes a first on-state and a second on-state when the gate voltage is lower than the negative threshold voltage or higher than the positive threshold voltage. Accordingly, it is possible to implement three current states, that is, hole current, electron current, and no current. The SB-MOSFET can be applied to a multi-bit memory and/or multi-bit logic device.

Abstract: Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

Abstract: A magnetic array having a collar with a plurality of magnets mounted to the inner surface of the collar. The magnets are positioned in a spaced alignment around the collar with all having the same polarity facing toward the center of the collar. Shielding is used to control and/or contain the direction of the magnetic force and the array is covered with a plastic coating.

Abstract: Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.

Abstract: Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.

Abstract: A system and method to detect angular rotation, linear displacement and/or surface deformations is presented. The method is based on the ability of a linear polarized light to interact with magnetic materials and to change its polarization angle due to Faraday effect. A basic structure of the system consists of a magneto-optic (MO) film with a two-domain structure and a single domain wall which are generated by gradient magnetic field produced by opposite polarity permanent magnets placed near the film. An AC magnetic field applied perpendicular to the MO film surface causes the magnetic domain wall in the MO film to oscillate at the same frequency. This leads to a detected output AC modulated signal. By measuring the temporal changes in this signal, information on angular rotation, linear displacement and/or surface deformation can be obtained.

Abstract: A method for assigning a channel in multi-FA CDMA mobile communication system according to the received power prevents communication quality of a FA from being inferior to that of the others by managing the interference level of the FA. The method comprises the steps of: comparing a first threshold value with received power when the base station receives a new call request; assigning a traffic channel in a first FA of the request, if the received power is less than the first threshold value, and searching a second FA of which received power is least, if not; comparing a second threshold value with the received power of the second FA; and assigning a traffic channel in the second FA if the received power is less than the second threshold value, and rejecting the request, if not.

Abstract: A structure for mixing different materials includes a main body having a lip portion with an upper opening portion, the main body coupled to an opening of a container containing a first material; a spouting guide member movably inserted in the lip portion by a predetermined distance; a cap ascending and descending together with the spouting guide member, the cap being coupled to the main body; and a seal closer separately formed on a lower portion of the spouting guide member.