Abstract: A method of fabricating a semiconductor device that includes dual spacers is provided. A nitrogen atmosphere may be created and maintained in a reaction chamber by supplying a nitrogen source gas. A silicon source gas and an oxygen source gas may then be supplied to the reaction chamber to deposit a silicon oxide layer on a semiconductor substrate, which may include a conductive material layer. A silicon nitride layer may then be formed on the silicon oxide layer by performing a general CVD process. Next, the silicon nitride layer may be etched until the silicon oxide layer is exposed. Because of the difference in etching selectivity between silicon nitride and silicon oxide, portions of the silicon nitride layer may remain on sidewalls of the conductive material layer. As a result, dual spacers formed of a silicon oxide layer and a silicon nitride layer may be formed on the sidewalls.

Abstract: A method of manufacturing a semiconductor device having a metal conducting layer is provided. A metal conducting layer pattern having the metal conducting layer is formed on a semiconductor substrate. A portion of the metal conducting layer is partially exposed on the semiconductor substrate. The semiconductor substrate having the metal conducting layer pattern is loaded into a reaction chamber. A first silicon source gas is flowed into the reaction chamber. A silicon oxide layer is formed on the semiconductor substrate having the metal conducting layer pattern by supplying a second silicon source gas and an oxygen source gas into the reaction chamber.

Abstract: The present invention includes a method of forming a metal gate electrode on which whiskers are not formed after performing a selective oxidation process and a subsequent heating process. The metal gate electrode is formed by forming a metal gate electrode pattern which is comprised of a polysilicon layer and a metal layer, and performing a selective oxidation process. After the selective oxidation process, the metal gate electrode undergoes a subsequent heating treatment. The selective oxidation process is carried out in a nitrogen containing gas ambient, so that a metal oxide layer is minimally formed on the metal layer. As a result, it is prevented from causing whiskers on the metal layer.

Abstract: In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.