Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board and a second surface opposite to the first surface, a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, and a cover layer covering the second surface of the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices and has grooves in a region between adjacent light emitting devices, a portion of a top surface of the buffer material layer is disposed between adjacent light emitting devices, and the cover layer fills the grooves of the buffer material layer.

Abstract: A display panel including a circuit board having pads thereon, and a plurality of pixel regions arranged on the circuit board, each of the pixel regions including a first LED stack disposed on the circuit board, a first bonding layer disposed between the first LED stack and the circuit board, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, first through-vias passing through the first LED stack and the first bonding layer, second through-vias passing through the second LED stack, and third through-vias passing through the third LED stack, in which the first through-vias pass through the first LED stack and the first bonding layer, and are connected to the pads of the circuit board.

Abstract: A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

Abstract: A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

Abstract: A light emitting device for a display including a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a surface protection layer at least partially covering side surfaces of the first LED stack, the second LED stack, or the third LED stack, a first bonding layer interposed between the second LED stack and the third LED stack, a second bonding layer interposed between the first LED stack and the second LED stack, lower buried vias passing through the second LED stack and the first bonding layer, and electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the third LED stack, respectively, and upper buried vias passing through the first LED stack.

Abstract: A display panel including a circuit board having pads thereon, and a plurality of pixel regions arranged on the circuit board, each of the pixel regions including a first LED stack disposed on the circuit board, a first bonding layer disposed between the first LED stack and the circuit board, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, first through-vias passing through the first LED stack and the first bonding layer, second through-vias passing through the second LED stack, and third through-vias passing through the third LED stack, in which the first through-vias pass through the first LED stack and the first bonding layer, and are connected to the pads of the circuit board.

Abstract: A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

Abstract: A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.

Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and a plurality of pads disposed over the first LED stack. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region. The plurality of pads is disposed on the peripheral region of the first LED stack.

Abstract: A light emitting device for a display including a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a surface protection layer at least partially covering side surfaces of the first LED stack, the second LED stack, or the third LED stack, a first bonding layer interposed between the second LED stack and the third LED stack, a second bonding layer interposed between the first LED stack and the second LED stack, lower buried vias passing through the second LED stack and the first bonding layer, and electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the third LED stack, respectively, and upper buried vias passing through the first LED stack.

Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, a third-1 connector and a third-2 connector disposed between the second LED stack and the third LED stack, and a plurality of pads disposed over the first LED stack, and electrically connected to the first, second, and third LED stacks. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region.

Abstract: A light emitting device for a display according to an exemplary embodiment includes a first LED stack, a second LED stack located under the first LED stack, and a third LED stack located under the second LED stack. The light emitting device further includes a first bonding layer, a second bonding layer, a first planarization layer, a second planarization layer, lower buried vias, and upper buried vias. The first planarization layer is recessed inwardly to expose an edge of the second LED stack.

Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.

Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and a plurality of pads disposed over the first LED stack. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region. The plurality of pads is disposed on the peripheral region of the first LED stack.

Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, a third-1 connector and a third-2 connector disposed between the second LED stack and the third LED stack, and a plurality of pads disposed over the first LED stack, and electrically connected to the first, second, and third LED stacks. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region.