Abstract: A display panel including a circuit board having pads thereon, and a plurality of pixel regions arranged on the circuit board, each of the pixel regions including a first LED stack disposed on the circuit board, a first bonding layer disposed between the first LED stack and the circuit board, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, first through-vias passing through the first LED stack and the first bonding layer, second through-vias passing through the second LED stack, and third through-vias passing through the third LED stack, in which the first through-vias pass through the first LED stack and the first bonding layer, and are connected to the pads of the circuit board.

Abstract: A light emitting device for a display including a first LED stack, a second LED stack disposed thereunder, a third LED stack disposed thereunder and including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, an insulation layer between the second bonding layer and the second LED stack, lower buried layers passing through the second LED stack and the insulation layer and electrically connected to the first and second conductivity type semiconductor layers of the third LED stack, respectively, upper buried layers passing through the first LED stack and the second bonding layer and electrically connected to the lower buried layers, and upper connectors disposed on the first LED stack and including upper connectors covering and electrically connected to the upper buried layers, respectively.

Abstract: A light emitting device including a substrate, a first semiconductor layer disposed on the substrate, a mesa including a second semiconductor layer and an active layer disposed on the first semiconductor layer, a first contact electrode contacting the first semiconductor layer, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode, and including a first opening disposed on the first contact electrode and a second opening disposed on the second contact electrode, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, and the first contact electrode includes an alloy layer.

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board, and a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices

Abstract: A light emitting device for a display including first, second, and third LED stacks, and bump pads disposed on the first LED stack, in which each LED stack includes a first semiconductor layer and a second semiconductor layer exposing a portion of the first semiconductor layer, the first LED stack includes upper through-holes and the second LED stack includes lower through-holes, the bump pads include a first bump pad electrically connected to the second semiconductor layer of the first LED stack, a second bump pad electrically connected to the second semiconductor layer of the second LED stack through the upper through-hole, a third bump pad electrically connected to the second semiconductor layer of the third LED stack through the upper through-hole and the lower through-hole, and a common bump pad electrically connected to the first semiconductor layers of each LED stack in common.

Abstract: A light emitting device including a substrate, a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, a first contact electrode contacting the first semiconductor layer exposed around the mesa, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed on the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings, respectively, in which the mesa has indentations in plan view, the first contact electrode is spaced apart from the mesa by a predetermined distance, surrounds the mesa, and contacts the first semiconductor layer in the indentations, and each of the first and second bump electrodes covers one of the openings of the passivation layer and a portion thereof.

Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first semiconductor layer, an active layer, and a second semiconductor layer, first, second, and third transparent electrodes in ohmic contact with a lower surface of the first LED stack, an upper surface of the second LED stack, and an upper surface of the third LED stack, respectively, a first electrode pad disposed on the first semiconductor layer of the third LED stack, a lower second electrode pad disposed on the third transparent electrode, and first, second, and third bump pads disposed on the first LED stack and electrically connected to the LED stacks, respectively, and a common bump pad disposed electrically connected to each LED stack, in which an upper surface of the first electrode pad is located at substantially the same elevation as that of the lower second electrode pad.

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material. The Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.

Abstract: A light emitting device including a substrate, a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, a first contact electrode contacting the first semiconductor layer exposed around the mesa, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed on the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings, respectively, in which the mesa has indentations in plan view, the first contact electrode is spaced apart from the mesa by a predetermined distance, surrounds the mesa, and contacts the first semiconductor layer in the indentations, and each of the first and second bump electrodes covers one of the openings of the passivation layer and a portion thereof.

Abstract: A light emitting device including a first light emitting part having a first area, a second light emitting part having a second area, and a third light emitting part having a third area, in which the first light emitting part is disposed on the same plane as the second light emitting part, the third light emitting part is disposed over the first and second light emitting parts, and the third area is larger than each of the first and second areas.

Abstract: An ultraviolet light-emitting device including a substrate, a first conductive type semiconductor layer disposed on the substrate, a mesa disposed on the first conductive type semiconductor layer and including a second conductive type semiconductor layer and an active layer disposed between the semiconductor layers, a first contact electrode contacting the exposed first conductive type semiconductor layer around the mesa, a second contact electrode contacting the second conductive type semiconductor layer on the mesa, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed above the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings of the passivation layer, in which the mesa has depressions in plan view, and the first and second bump electrodes cover the openings and a portion of the passivation layer.

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.

Abstract: An ultraviolet light-emitting device including a substrate, a first conductive type semiconductor layer disposed on the substrate, a mesa disposed on the first conductive type semiconductor layer and including a second conductive type semiconductor layer and an active layer disposed between the semiconductor layers, a first contact electrode contacting the exposed first conductive type semiconductor layer around the mesa, a second contact electrode contacting the second conductive type semiconductor layer on the mesa, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed above the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings of the passivation layer, in which the mesa has depressions in plan view, and the first and second bump electrodes cover the openings and a portion of the passivation layer.

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.

Abstract: An ultraviolet light emitting device is disclosed. An ultraviolet light emitting device according to a first embodiment of the disclosed technology comprises: a substrate having a first surface and a second surface facing the first surface; and a light emitting diode comprising a first type semiconductor layer, an active layer which emits ultraviolet light, and a second type semiconductor layer, the light emitting diode being formed on the first surface of the substrate, wherein the surface area of the substrate divided by the light emitting area of the light emitting diode may be ?6.5.

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material, wherein the Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.