Abstract: An in-plane switching mode liquid crystal display device comprises first and second substrates, a plurality of gate and data bus lines defining pixel regions and arranged on the first substrate, a plurality of data electrodes on same plane of the data bus lines these some parts are overlapped with adjacent gate bus line, a passivation layer on the data electrodes, a plurality of common electrodes on the passivation layer these some parts are overlapped with adjacent data electrodes, and a liquid crystal layer between the first and second substrates.

Abstract: A multi-domain liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. A plurality of gate bus lines are arranged in a first direction on the first substrate and a plurality of data bus lines are arranged in a second direction on the first substrate to define a pixel region. A pixel electrode is electrically charged through the data bus line in the pixel region. A common-auxiliary electrode surrounds the pixel electrode on a same layer whereon the gate bus line is formed.

Abstract: An in-plane switching mode liquid crystal display device includes first and second substrates. A plurality of gate and data bus lines define pixel regions and arranged on the first substrate. A plurality of thin film transistors are adjacent respective cross points of the gate and data bus lines. A plurality of gate electrodes are connected to said gate bus lines. A gate insulator is on the gate electrodes and a first metal layer includes a plurality of first electrodes on the gate insulator. A passivation layer is on the first metal layer. A transparent second metal layer includes a plurality of second electrodes on the passivation layer, the first and second electrodes applying plane electric fields.

Abstract: A flat panel display device having a high capacitance and a high aperture ratio. A thin film transistor and a capacitor are formed on an insulating substrate. The thin film transistor includes a semiconductor layer, a gate electrode and source and drain electrodes. The capacitor has first and second capacitor electrodes and a dielectric layer. An insulating layer is formed over the transistor to insulate the gate electrode from the source and drain electrodes, and a portion of the insulating layer is formed as the dielectric layer between the first and second capacitor electrodes. A non-planar shape of the first capacitor electrode and a conforming shape of the dielectric layer and a second capacitor electrode increase a capacitance of the capacitor. The portion of the insulating layer serving as the capacitor dielectric is formed to be thinner than the portion of the insulating layer formed over the gate electrode.

Abstract: An in-plane switching mode liquid crystal display device includes first and second opposed substrates having inner surfaces in which a liquid crystal layer formed therebetween, a data bus line and a gate bus line arranged perpendicularly and/or horizontally in a matrix on the first substrate thereby defining a unit pixel region, and a pair of data electrode and common electrode applying a plane electric field in the liquid crystal layer, the electrodes being inclined with respect to the data bus line and parallel to each other.

Abstract: An in-plane switching mode liquid crystal display device comprises first and second substrates, a plurality of gate and data bus lines defining pixel regions and arranged on the first substrate, a plurality of data electrodes on same plane of the data bus lines these some parts are overlapped with adjacent gate bus line, a passivation layer on the data electrodes, a plurality of common electrodes on the passivation layer these some parts are overlapped with adjacent data electrodes, and a liquid crystal layer between the first and second substrates.

Abstract: The present invention discloses a method of manufacturing a polycrystalline silicon thin film transistor including forming a buffer layer on a substrate; depositing an impurity-doped amorphous silicon layer on the buffer layer and patterning the impurity-doped amorphous silicon layer into source and drain regions, where the source and drain regions are spaced apart from each other; forming a metal layer over the entire substrate while covering the source and drain regions; depositing an intrinsic amorphous silicon layer on the metal layer; applying a voltage to the intrinsic amorphous silicon layer to simultaneously crystallize the intrinsic amorphous silicon layer and the source and drain regions so that the intrinsic amorphous silicon layer is converted into a polycrystalline silicon layer; and patterning the polycrystalline silicon layer to form an active layer so that part of the polycrystalline silicon layer overlaps the source and drain regions.

Abstract: An in-plane switching mode liquid crystal display device comprises first and second substrates, a plurality of gate and data bus lines defining pixel regions and arranged on the first substrate, a plurality of data electrodes on same plane of the data bus lines these some parts are overlapped with adjacent gate bus line, a passivation layer on the data electrodes, a plurality of common electrodes on the passivation layer these some parts are overlapped with adjacent data electrodes, and a liquid crystal layer between the first and second substrates.

Abstract: Provided is a method for fabricating a liquid crystal display device integrated with a driver circuit on a substrate, a surface of the substrate being divided into a P-channel region, an N-channel region, and a pixel region.

Abstract: The present invention discloses a method of manufacturing a thin film transistor, including: depositing an amorphous silicon layer, an insulating layer, and a gate metal layer on a substrate sequentially; patterning the insulating layer and the gate metal layer to form a gate insulating layer and a gate electrode; treating an impurity and a catalyst metal on the amorphous silicon layer using the gate electrode as a mask; and applying a DC voltage to both terminals of the amorphous silicon layer to form a polysilicon layer, the polysilicon layer having source and drain regions and an active area.

Abstract: An in-plane switching mode liquid crystal display device includes first and second opposed substrates having inner surfaces in which a liquid crystal layer formed therebetween, a data bus line and a gate bus line arranged perpendicularly and/or horizontally in a matrix on the first substrate thereby defining a unit pixel region, and a pair of data electrode and common electrode applying a plane electric field in the liquid crystal layer, the electrodes being inclined with respect to the data bus line and parallel to each other.

Abstract: A method for fabricating a thin film transistor of a liquid crystal display device comprising the steps of introducing a dopant into an indium tin oxide layer or gate insulating layer with an ion shower doping process, forming an amorphous silicon layer thereon, exposing the amorphous silicon layer with a laser beam to diffuse the dopant into the amorphous layer and activate the dopant. As a result of the laser annealing, an n or p-type ohmic polysilicon layer and an intrinsic polysilicon channel layer can be formed. A gate electrode can also be formed on a gate insulating layer using a gate mask.

Abstract: A thin film transistor substrate integrated with a driver circuit is provided for use in a liquid crystal display. The thin film transistor substrate includes a substrate having a pixel region and a driver region, a plurality of pixel driving thin film transistors formed in the pixel region, and a CMOS thin film transistor circuit formed in the driver region. Each of the plurality of pixel driving thin film transistors includes a channel region formed of an amorphous semiconductor, source and drain regions in contact with the channel region and formed of a polycrystalline semiconductor, and first and second transparent electrodes in contact with the source and drain regions, respectively. The CMOS thin transistor circuit includes a P-type thin film transistor and an N-type thin film transistor.

Abstract: A method for fabricating a thin film transistor of a liquid crystal display device comprising the steps of introducing a dopant into an indium tin oxide layer or gate insulating layer with an ion shower doping process, forming an amorphous silicon layer thereon, exposing the amorphous silicon layer with a laser beam to diffuse the dopant into the amorphous layer and activate the dopant. As a result of the laser annealing, an n or p-type ohmic polysilicon layer and an intrinsic polysilicon channel layer can be formed. A gate electrode can also be formed on a gate insulating layer using a gate mask.

Abstract: Provided is a method for fabricating a liquid crystal display device integrated with a driver circuit on a substrate, a surface of the substrate being divided into a P-channel region, an N-channel region, and a pixel region.

Abstract: A thin film transistor is fabricated by introducing a dopant into an indium tin oxide layer or a gate insulating layer by an ion shower doping technique. An a-Si semiconductor layer is then deposited on the surface of the substrate and subjected to a single exposure of laser light. The laser exposure or annealing diffuses dopant into the semiconductor layer and activates the dopant to form an ohmic layer of n-type or p-type conductivity polysilicon, and an intrinsic polysilicon layer. A metal layer and an indium tin oxide layer are formed to the side of a gate electrode to maintain an electrical connection even if a break is formed in the data bus line.