Abstract: Disclosed herein are integrated circuit (IC) packages with solder thermal interface materials (STIMs) with embedded particles, as well as related methods and devices. For example, in some embodiments, an IC package may include a package substrate, a lid, a die between the package substrate and the lid and a STIM between the die and the lid. The STIM may include embedded particles, and at least some of the embedded particles may have a diameter equal to a distance between the die and the lid.

Abstract: Disclosed herein are integrated circuit (IC) packages with asymmetric adhesion material regions, as well as related methods and devices. For example, in some embodiments, an IC package may include a solder thermal interface material (STIM) between a die of the IC package and a lid of the IC package. The lid of the IC package may include an adhesion material region, in contact with the STIM, that is asymmetric with respect to the die.

Abstract: Disclosed herein are integrated circuit (IC) packages with thermal interface materials (TIMs) with different material compositions, as well as related methods and devices. For example, in some embodiments, an IC package may include a package substrate, a die, and TIM, wherein the die is between the TIM and the package substrate along a vertical axis. The TIM may include a first TIM having a first material composition and a second TIM having a second material composition; the first material composition may be different than the second material composition, and the first TIM and the second TIM may be in different locations along a lateral axis perpendicular to the vertical axis.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the second surface of the package substrate; a cooling apparatus thermally coupled to the second surface of the die; and a thermal interface material (TIM) between the second surface of the die and the cooling apparatus, wherein the TIM includes an indium alloy having a liquidus temperature equal to or greater than about 245 degrees Celsius.