Patents by Inventor Sergio Edelstein
Sergio Edelstein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9710903Abstract: Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided. One system is configured to detect design defects and process defects at locations on a wafer at which images are acquired by an electron beam review subsystem based on defects in a design, additional defects in the design, which are detected by comparing an image of a die in the design printed on the wafer acquired by the electron beam review subsystem to an image of the die stored in a database, and defects detected on the wafer by a wafer inspection system.Type: GrantFiled: June 5, 2009Date of Patent: July 18, 2017Assignee: KLA-Tencor Corp.Inventors: Christophe Fouquet, Zain Saidin, Sergio Edelstein, Savitha Nanjangud, Carl Hess
-
Publication number: 20130168232Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.Type: ApplicationFiled: February 25, 2013Publication date: July 4, 2013Inventors: Jaim NULMAN, Sergio EDELSTEIN, Mani SUBRAMANI, Zheng XU, Howard E. GRUNES, Avi TEPMAN, John C. FORSTER, Praburam GOPALRAJA
-
Patent number: 8398832Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.Type: GrantFiled: September 15, 2005Date of Patent: March 19, 2013Assignee: Applied Materials Inc.Inventors: Jaim Nulman, Sergio Edelstein, Mani Subramani, Zheng Xu, Howard E. Grunes, Avi Tepman, John C. Forster, Praburam Gopalraja
-
Publication number: 20110276935Abstract: Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided.Type: ApplicationFiled: June 5, 2009Publication date: November 10, 2011Applicant: KLA-TENCOR CORPORATIONInventors: Christophe Fouquet, Zain Saidin, Sergio Edelstein, Savitha Nanjangud, Carl Hess
-
Patent number: 7893703Abstract: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.Type: GrantFiled: August 21, 2006Date of Patent: February 22, 2011Assignee: KLA-Tencor Technologies Corp.Inventors: Jeffrey A. Rzepiela, Yiping Feng, Shiyou Pei, Alexander Kagan, Jianou Shi, Sergio Edelstein
-
Patent number: 7719294Abstract: Systems configured to perform a non-contact method for determining a property of a specimen are provided. One system configured to perform a non-contact method for determining a property of a specimen includes a focused biasing device configured to provide a stimulus to a focused spot on the specimen. The system also includes a sensor configured to measure a parameter of a measurement spot on the specimen. The measurement spot overlaps the focused spot. The system further includes a processor configured to determine the property of the specimen from the parameter.Type: GrantFiled: July 27, 2006Date of Patent: May 18, 2010Assignee: KLA-Tencor Technologies Corp.Inventors: Amin Samsavar, John M. Schmidt, Rainer Schierle, Gregory S. Horner, Thomas G. Miller, Zhiwei Xu, Xiaofeng Hu, Jianou Shi, Sergio Edelstein
-
Patent number: 7538333Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.Type: GrantFiled: July 27, 2006Date of Patent: May 26, 2009Assignee: KLA-Tencor Technologies CorporationInventors: Amin Samsavar, John M. Schmidt, Rainer Schierle, Gregory S. Horner, Thomas G. Miller, Zhiwei Xu, Xiaofeng Hu, Jianou Shi, Sergio Edelstein
-
Patent number: 7369233Abstract: In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.Type: GrantFiled: November 19, 2003Date of Patent: May 6, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Mehrdad Nikoonahad, Shing Lee, Hidong Kwak, Sergio Edelstein, Guoheng Zhao, Gary Janik
-
Patent number: 7345306Abstract: A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.Type: GrantFiled: June 2, 2006Date of Patent: March 18, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Sergio Edelstein, Eric F. Bouche, Jianou Shi, Shiyou Pei, Xiafang Zhang
-
Patent number: 7248062Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.Type: GrantFiled: November 4, 2003Date of Patent: July 24, 2007Assignee: KLA-Tencor Technologies Corp.Inventors: Amin Samsavar, John M. Schmidt, Rainer Schierle, Gregory S. Horner, Thomas G. Miller, Zhiwei Xu, Xiaofeng Hu, Jianou Shi, Sergio Edelstein
-
Publication number: 20070069759Abstract: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.Type: ApplicationFiled: August 21, 2006Publication date: March 29, 2007Applicant: KLA-TENCOR TECHNOLOGIES CORP.Inventors: Jeffrey Rzepiela, Yiping Feng, Shiyou Pei, Alexander Kagan, Jianou Shi, Sergio Edelstein
-
Patent number: 7098050Abstract: A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.Type: GrantFiled: October 27, 2004Date of Patent: August 29, 2006Assignee: KLA-Tencor Technologies CorporationInventors: Sergio Edelstein, Eric F. Bouche, Jianou Shi, Shiyou Pei, Xiafang Zhang
-
Publication number: 20060070875Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.Type: ApplicationFiled: September 15, 2005Publication date: April 6, 2006Inventors: Jaim Nulman, Sergio Edelstein, Mani Subramani, Zheng Xu, Howard Grunes, Avi Tepman, John Forster, Praburam Gopalraja
-
Publication number: 20040256217Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.Type: ApplicationFiled: July 20, 2004Publication date: December 23, 2004Inventors: Jaim Nulman, Sergio Edelstein, Mani Subramani, Zheng Xu, Howard Grunes, Avi Tepman, John Forster, Praburam Gopalraja
-
Patent number: 6783639Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.Type: GrantFiled: January 17, 2002Date of Patent: August 31, 2004Assignee: Applied MaterialsInventors: Jaim Nulman, Sergio Edelstein, Mani Subramani, Zheng Xu, Howard Grunes, Avi Tepman, John Forster, Praburam Gopalraja
-
Publication number: 20040150820Abstract: In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.Type: ApplicationFiled: November 19, 2003Publication date: August 5, 2004Inventors: Mehrdad Nikoonahad, Shing Lee, Hidong Kwak, Sergio Edelstein, Guoheng Zhao, Gary Janik
-
Publication number: 20040104119Abstract: A method and apparatus for plating a metal onto a substrate. The apparatus generally The apparatus generally includes a substrate support member configured to support a substrate during a plating process, a cathode clamp ring detachably positioned to circumscribe a perimeter of the substrate and a movable anode assembly disposed above the substrate, wherein the anode assembly is movable in a direction generally perpendicular the substrate. The apparatus generally further includes a fluid inlet formed through the anode assembly, the fluid inlet being configured to supply a plating solution to the processing area sufficient to electrically connect the anode assembly to the substrate.Type: ApplicationFiled: December 2, 2002Publication date: June 3, 2004Applicant: Applied Materials, Inc.Inventors: Sergio Edelstein, Peter Hey, Yezdi Dordi
-
Patent number: 6603269Abstract: An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.Type: GrantFiled: June 13, 2000Date of Patent: August 5, 2003Assignee: Applied Materials, Inc.Inventors: Be Van Vo, Salvador P. Umotoy, Son N. Trinh, Lawrence Chung-Lai Lei, Sergio Edelstein, Avi Tepman, Chien-Teh Kao, Kenneth Tsai
-
Publication number: 20020144901Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.Type: ApplicationFiled: January 17, 2002Publication date: October 10, 2002Inventors: Jaim Nulman, Sergio Edelstein, Mani Subramani, Zheng Xu, Howard Grunes, Avi Tepman, John Forster, Praburam Gopalraja
-
Publication number: 20020084181Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.Type: ApplicationFiled: November 7, 2001Publication date: July 4, 2002Applicant: Applied Materials, Inc.Inventors: Praburam Gopalraja, Sergio Edelstein, Avi Tepman, Peijun Ding, Debabrata Ghosh, Nirmalya Maity