Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.

Abstract: The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.

Abstract: A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

Abstract: A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

Abstract: A combination coil and shield for a plasma chamber in a semiconductor fabrication system is provided. The coil-shield has a plurality of turns to couple energy efficiently into a plasma and also substantially blocks deposition material from reaching a second shield positioned behind the first shield.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.

Abstract: In accordance with the present invention, two types of polymeric dielectric systems useful in construction of a high-temperature electrostatic chuck are disclosed. Further, a high temperature power connection for transmitting power from a supply source to a conductive extension from the electrostatic chuck conductive layer is described. The first polymeric dielectric system provides for the use of polyimide films which do not require an adhesive to adhere to an underlying substrate support platen. The self-adhering polyimide film comprises from one to three layers of polyimide material, wherein at least one outer layer of polyimide material is thermoplastic in nature, for the purpose of adhesion and/or encapsulation. When the film comprises two layers, one of the layers is a non-thermoplastic polyimide having an increased glass transition temperature of about 350.degree. C. or greater.

Abstract: A wafer heater assembly (8) for a deposition/etch chamber (2) includes a base (32) and a wafer support or chuck (36), having a wafer-chucking surface (76), spaced apart from the base by a circumferential barrier support (38). A heater sub-assembly (54) is mounted to the wafer support. Bolts (48) are used to secure the wafer support to the base with the barrier support therebetween to press the barrier support against an elastomeric O-ring, a metal V-seal or other fluid seal (46) positioned between the base and base end (42) of the barrier support. This eliminates the need to discard the entire heater assembly if the dielectric wafer-chucking surface becomes damaged. The temperature of the fluid seal is about 50.degree.-70.degree. C. lower than the temperature of the wafer-chucking surface when the wafer-chucking surface is about 200.degree.-300.degree. C.

Abstract: In accordance with the present invention, two types of polymeric dielectric systems useful in construction of a high-temperature electrostatic chuck are disclosed. Further, a high temperature power connection for transmitting power from a supply source to a conductive extension from the electrostatic chuck conductive layer is described. The first polymeric dielectric system provides for the use of polyimide films which do not require an adhesive to adhere to an underlying substrate support platen. The self-adhering polyimide film comprises from one to three layers of polyimide material, wherein at least one outer layer of polyimide material is thermoplastic in nature, for the purpose of adhesion and/or encapsulation. When the film comprises two layers, one of the layers is a non-thermoplastic polyimide having an increased glass transition temperature of about 350.degree. C. or greater.

Abstract: Sputtering apparatus and method suitable for forming a step coating on a workpiece. A workpiece is supported in a chamber, particles are emitted from a sputtering source, and the particles are passed through a collimating filter having a plurality of transmissive cells positioned between the sputtering source and the workpiece to limit the angles at which the particles can be deposited onto the workpiece. The collimating filter varies in height from a center portion to an outer portion while preferably maintaining a constant cell aspect ratio.