Abstract: Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered.

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.

Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract: A substrate carrier is described that uses a proportional thermal fluid delivery system In one example the apparatus includes a heat exchanger to provide a thermal fluid to a fluid channel of a substrate carrier and to receive the thermal fluid from the fluid channel, the thermal fluid in the fluid channel to control the temperature of the carrier during substrate processing. A proportional valve controls the rate of flow of thermal fluid from the heat exchanger to the fluid channel, A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve in response to the measured temperature to adjust the rate of flow.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract: Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

Abstract: Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract: Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered.

Abstract: The disclosure concerns a plasma-enhanced etch process in which chamber pressure and/or RF power level is ramped throughout the etch process.

Abstract: Methods and systems for adapting and/or tuning feedforward control parameters in a plasma processing chamber. In embodiments, a dependent process parameter, such as a chamber component temperature, is controlled with a feedforward control algorithm based on one or more independent process parameters, such as RF power. A control algorithm may calculate steady-state deviation of the dependent parameter from a process recipe setpoint, estimate an amount by which an existing control gain coefficient is to be changed to better achieve the setpoint, associate the new control gain coefficient with the particular recipe operation, and store the new control gain coefficient for subsequent execution of the recipe operation. In embodiments, the amount by which a gain coefficient is to be changed is based on a model function derived from a lookup table associating gain coefficients with setpoints of the dependent process parameter and values of the independent process parameter.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract: A method and apparatus for a mixed-mode operation of an electrostatic chuck in a semiconductor substrate processing system. The chuck is operated in a voltage mode before and after a processing and is operated in a current mode during the processing to suppress arcing during the processing of a substrate.

Abstract: A method of detecting arcing in a semiconductor substrate processing system. In one embodiment, the method includes monitoring a signal, identifying an indicia of arcing in the signal, and performing an action in response to the indicia of arcing when the indicia of arcing is identified.

Abstract: A method and apparatus for a mixed-mode operation of an electrostatic chuck in a semiconductor substrate processing system. The chuck is operated in a voltage mode before and after a processing and is operated in a current mode during the processing to suppress arcing during the processing of a substrate.