Patents by Inventor Serguei Okhonin

Serguei Okhonin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10964837
    Abstract: According to embodiments of the present disclosure, a dynamic photodiode may include a substrate including a major surface; a hedge formation extruding perpendicularly from the major surface; a first resettable region disposed on a top surface the hedge formation; a second resettable region disposed on the top surface of the hedge formation; a first doped region disposed on the top surface of the hedge formation between the first resettable region and the second resettable region, the first doped region including a first contact configured to receive a first voltage; and a second doped region disposed on a top surface of the hedge formation, the second doped region including a second contact configured to receive a second voltage. Exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: March 30, 2021
    Assignee: ACTLIGHT SA
    Inventors: Denis Sallin, Maxim Gureev, Serguei Okhonin
  • Publication number: 20210074748
    Abstract: A photodetector device comprising n-type and p-type light absorbing regions arranged to form a pn-junction and n+and p+ contact regions connected to respective contacts. The light absorbing regions and the contact regions are arranged in a sequence n+ p n p+ so that, after a voltage applied between the n+ and p+ contacts is switched from a reverse bias to a forward bias, electrons and holes which are generated in the light absorbing regions in response to photon absorption drift towards the p+ and n+ contact regions respectively, which causes current to start to flow between the contacts after a time delay which is inversely proportional to the incident light intensity.
    Type: Application
    Filed: November 20, 2020
    Publication date: March 11, 2021
    Applicant: ActLight SA
    Inventors: Serguei OKHONIN, Maxim GUREEV, Denis SALLIN
  • Publication number: 20200373338
    Abstract: A photodetector device comprising n-type and p-type light absorbing regions arranged to form a pn-junction and n+ and p+ contact regions connected to respective contacts. The light absorbing regions and the contact regions are arranged in a sequence n+ p n p+ so that, after a voltage applied between the n+ and p+ contacts is switched from a reverse bias to a forward bias, electrons and holes which are generated in the light absorbing regions in response to photon absorption drift towards the p+ and n+ contact regions respectively, which causes current to start to flow between the contacts after a time delay which is inversely proportional to the incident light intensity.
    Type: Application
    Filed: June 3, 2019
    Publication date: November 26, 2020
    Inventors: Serguei OKHONIN, Maxim GUREEV, Denis SALLIN
  • Publication number: 20200373346
    Abstract: A photodetector sensor array device as usable for camera chips comprises upper and lower contact layers of n+ and p+ semiconductor material either side of a light absorbing region made of either one layer, or two oppositely doped layers, of semiconductor material. Insulating trenches of dielectric material extending through the layers to form the individual pixels. Respective contacts are connected to the upper and lower contact layers so that each pixel can be reverse biased or forward biased. In operation, the device is reset with a reverse bias, and then switched to forward bias for sensing. After switching, carriers generated in response to photon absorption accumulate in potential wells in the light absorbing region and so reduce the potential barriers to the contact layers, which causes current to start to flow between the contacts after a time delay which is inversely proportional to the incident light intensity.
    Type: Application
    Filed: January 30, 2020
    Publication date: November 26, 2020
    Inventors: Serguei OKHONIN, Maxim GUREEV, Denis SALLIN
  • Publication number: 20200005854
    Abstract: Techniques are disclosed for writing, programming, holding, maintaining, sampling, sensing, reading and/or determining a data state of a memory cell of a memory cell array, such as a memory cell array having a plurality of memory cells each comprising an electrically floating body transistor. In one aspect, the techniques are directed to controlling and/or operating a semiconductor memory cell having an electrically floating body transistor in which an electrical charge is stored in the body region of the electrically floating body transistor. The techniques may employ bipolar transistor currents to control, write and/or read a data state in such a memory cell. In this regard, the techniques may employ a bipolar transistor current to control, write and/or read a data state in/of the electrically floating body transistor of the memory cell.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 2, 2020
    Applicant: OVONYX MEMORY TECHNOLOGY, LLC
    Inventors: Serguei OKHONIN, Mikhail NAGOGA
  • Patent number: 10509113
    Abstract: In some embodiments, a measurement system may include a time to digital converter (TDC) configured to determine a first digitized time at which it receives a command signal and a second digitized time at which it receives an alert signal. The first digitized time and the second digitized time may be determined for N number of iterations. The command signal may be delayed by a delay time, and the delay time may be varied for each of the N number of iterations. The measurement system may include a first dynamic photodiode (DPD) configured to switch from a reverse bias mode to an active mode based on the command signal. The TDC may calculate a difference between the first digitized time and the second digitized time for each of the N number of iterations, and the difference may vary as the delay time is varied.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: December 17, 2019
    Assignee: ACTLIGHT SA
    Inventors: Denis Sallin, Maxim Gureev, Alexander Kvasov, Serguei Okhonin
  • Patent number: 10418091
    Abstract: Techniques are disclosed for writing, programming, holding, maintaining, sampling, sensing, reading and/or determining a data state of a memory cell of a memory cell array, such as a memory cell array having a plurality of memory cells each comprising an electrically floating body transistor. In one aspect, the techniques are directed to controlling and/or operating a semiconductor memory cell having an electrically floating body transistor in which an electrical charge is stored in the body region of the electrically floating body transistor. The techniques may employ bipolar transistor currents to control, write and/or read a data state in such a memory cell. In this regard, the techniques may employ a bipolar transistor current to control, write and/or read a data state in/of the electrically floating body transistor of the memory cell.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: September 17, 2019
    Assignee: OVONYX MEMORY TECHNOLOGY, LLC
    Inventors: Serguei Okhonin, Mikhail Nagoga
  • Publication number: 20190252570
    Abstract: According to embodiments of the present disclosure, a dynamic photodiode may include a substrate including a major surface; a hedge formation extruding perpendicularly from the major surface; a first resettable region disposed on a top surface the hedge formation; a second resettable region disposed on the top surface of the hedge formation; a first doped region disposed on the top surface of the hedge formation between the first resettable region and the second resettable region, the first doped region including a first contact configured to receive a first voltage; and a second doped region disposed on a top surface of the hedge formation, the second doped region including a second contact configured to receive a second voltage. Exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.
    Type: Application
    Filed: April 17, 2019
    Publication date: August 15, 2019
    Applicant: ActLight SA
    Inventors: Denis SALLIN, Maxim GUREEV, Serguei OKHONIN
  • Patent number: 10269855
    Abstract: According to embodiments of the present disclosure, a dynamic photodiode may include a substrate, a first doped region, a second doped region, a first resettable doped region between the first doped region and the second doped region, and a first light absorbing region between the first doped region and the second doped region. The first doped region may include a first contact that receives a first voltage. The second doped region may include a second contact that receives a second voltage. The first resettable doped region may include a first resettable contact that receives a reset voltage or is set as an open circuit. The first light absorbing region may generate first electron-hole pairs in the substrate when the first resettable contact is set as an open circuit, and the first electron-hole pairs may be removed from the substrate when the first resettable contact receives the reset voltage.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: April 23, 2019
    Assignee: ACTLIGHT SA
    Inventors: Denis Sallin, Maxim Gureev, Alexander Kvasov, Serguei Okhonin
  • Publication number: 20180292517
    Abstract: In some embodiments, a measurement system may include a time to digital converter (TDC) configured to determine a first digitized time at which it receives a command signal and a second digitized time at which it receives an alert signal. The first digitized time and the second digitized time may be determined for N number of iterations. The command signal may be delayed by a delay time, and the delay time may be varied for each of the N number of iterations. The measurement system may include a first dynamic photodiode (DPD) configured to switch from a reverse bias mode to an active mode based on the command signal. The TDC may calculate a difference between the first digitized time and the second digitized time for each of the N number of iterations, and the difference may vary as the delay time is varied.
    Type: Application
    Filed: April 7, 2017
    Publication date: October 11, 2018
    Applicant: ActLight SA
    Inventors: Denis SALLIN, Maxim GUREEV, Alexander KVASOV, Serguei OKHONIN
  • Publication number: 20180175095
    Abstract: According to embodiments of the present disclosure, a dynamic photodiode may include a substrate, a first doped region, a second doped region, a first resettable doped region between the first doped region and the second doped region, and a first light absorbing region between the first doped region and the second doped region. The first doped region may include a first contact that receives a first voltage. The second doped region may include a second contact that receives a second voltage. The first resettable doped region may include a first resettable contact that receives a reset voltage or is set as an open circuit. The first light absorbing region may generate first electron-hole pairs in the substrate when the first resettable contact is set as an open circuit, and the first electron-hole pairs may be removed from the substrate when the first resettable contact receives the reset voltage.
    Type: Application
    Filed: March 17, 2017
    Publication date: June 21, 2018
    Applicant: ActLight SA
    Inventors: Denis SALLIN, Maxim GUREEV, Alexander KVASOV, Serguei OKHONIN
  • Patent number: 9735304
    Abstract: A monolithic photo detector device disposed on a bulk substrate, comprising a photo detector disposed integrated in the bulk substrate including: (1) a p-type doped impurity region extending along a first direction in the major surface of the substrate and receiving a first voltage, (2) first and second gates being spaced apart from each other and extending in the first direction over the major surface of the substrate, wherein the gates receives a second voltage, (3) an n-type doped impurity region, extending along the first direction in the major surface of the substrate and receiving a third voltage; and (4) a light absorbing region, disposed between the second doped impurity region and the first gate. The device also includes control circuitry, integrated in the substrate to generate the first, second and third voltages that control an operating state of the detector.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: August 15, 2017
    Assignee: ACTLIGHT, S.A.
    Inventors: Serguei Okhonin, Maxim Gureev
  • Patent number: 9431566
    Abstract: A photo detector comprising a first doped impurity region (adapted to receive a first voltage) disposed in or on a substrate; a body region, juxtaposed the first doped impurity region; a gate (adapted to receive a second voltage) spaced from a first portion of the body region; a light absorbing region, juxtaposed a second portion of the body region, includes a material which, in response to light incident thereon, generates carrier pairs including a first and second type carriers; a contact region (adapted to receive a third voltage) juxtaposed the light absorbing region; wherein, in response to incident light, the gate attracts first type carriers of the carrier pairs to the first portion of the body region which causes second carriers from the first doped impurity region to flow to the contact region, and the contact region attracts second type carriers.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: August 30, 2016
    Assignee: ActLight S.A.
    Inventor: Serguei Okhonin
  • Patent number: 9425190
    Abstract: Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for biasing a direct injection semiconductor memory device. The method may comprise applying a first voltage potential to a first N-doped region via a bit line and applying a second voltage potential to a second N-doped region via a source line. The method may also comprise applying a third voltage potential to a word line, wherein the word line is spaced apart from and capacitively coupled to a body region that is electrically floating and disposed between the first N-doped region and the second N-doped region. The method may further comprise applying a fourth voltage potential to a P-type substrate via a carrier injection line.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: August 23, 2016
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Yogesh Luthra, Serguei Okhonin, Mikhail Nagoga
  • Patent number: 9331083
    Abstract: Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first region and a second region. The apparatus may also include a body region disposed between the first region and the second region and capacitively coupled to a plurality of word lines, wherein each of the plurality of word lines is capacitively coupled to different portions of the body region.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: May 3, 2016
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Serguei Okhonin, Viktor Koldiaev, Mikhail Nagoga, Yogesh Luthra
  • Patent number: 9240496
    Abstract: Techniques for providing floating body memory devices are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor device comprising a floating gate, a control gate disposed over the floating gate, a body region that is electrically floating, wherein the body region is configured so that material forming the body region is contained under at least one lateral boundary of the floating gate, and a source region and a drain region adjacent the body region.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: January 19, 2016
    Assignee: MICRON TECHNOLOGY, INC.
    Inventor: Serguei Okhonin
  • Patent number: 9236520
    Abstract: Techniques for using photo detectors as tunable proximity sensors for detection of target objects and ascertaining their distance from the proximity sensors are disclosed. In one embodiment, the techniques may be realized as a proximity sensor system including a photo detector having a first doped region, a gate, a second doped region and a light absorbing region, a control circuitry for generating a plurality of control signals to be applied to the photo detector, and a signal detector to detect an output signal from the photo detector.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: January 12, 2016
    Assignee: ACTLIGHT S.A.
    Inventors: Serguei Okhonin, Maxim Gureev
  • Publication number: 20150221806
    Abstract: A photo detector comprising a first doped impurity region (adapted to receive a first voltage) disposed in or on a substrate; a body region, juxtaposed the first doped impurity region; a gate (adapted to receive a second voltage) spaced from a first portion of the body region; a light absorbing region, juxtaposed a second portion of the body region, includes a material which, in response to light incident thereon, generates carrier pairs including a first and second type carriers; a contact region (adapted to receive a third voltage) juxtaposed the light absorbing region; wherein, in response to incident light, the gate attracts first type carriers of the carrier pairs to the first portion of the body region which causes second carriers from the first doped impurity region to flow to the contact region, and the contact region attracts second type carriers.
    Type: Application
    Filed: April 17, 2015
    Publication date: August 6, 2015
    Inventor: Serguei OKHONIN
  • Patent number: 9012960
    Abstract: A photo detector comprising a first doped impurity region (adapted to receive a first voltage) disposed in or on a substrate; a body region, juxtaposed the first doped impurity region; a gate (adapted to receive a second voltage) spaced from a first portion of the body region; a light absorbing region, juxtaposed a second portion of the body region, includes a material which, in response to light incident thereon, generates carrier pairs including a first and second type carriers; a contact region (adapted to receive a third voltage) juxtaposed the light absorbing region; wherein, in response to incident light, the gate attracts first type carriers of the carrier pairs to the first portion of the body region which causes second carriers from the first doped impurity region to flow to the contact region, and the contact region attracts second type carriers.
    Type: Grant
    Filed: May 28, 2012
    Date of Patent: April 21, 2015
    Assignee: Actlight, S.A.
    Inventor: Serguei Okhonin
  • Publication number: 20150054133
    Abstract: Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for biasing a direct injection semiconductor memory device. The method may comprise applying a first voltage potential to a first N-doped region via a bit line and applying a second voltage potential to a second N-doped region via a source line. The method may also comprise applying a third voltage potential to a word line, wherein the word line is spaced apart from and capacitively coupled to a body region that is electrically floating and disposed between the first N-doped region and the second N-doped region. The method may further comprise applying a fourth voltage potential to a P-type substrate via a carrier injection line.
    Type: Application
    Filed: October 1, 2014
    Publication date: February 26, 2015
    Applicant: Micron Technology, Inc.
    Inventors: Yogesh LUTHRA, Serguei OKHONIN, Mikhail NAGOGA