Abstract: A hydroponic system (1) using seawater, wherein seawater (W1) is used for hydroponic cultivation of salt-tolerant plants, including a water supply pump (21) that pumps up, from the sea (S), seawater (W1) having a salinity, a bacteria content and an unwanted matter content are less than or equal to predetermined threshold values; a water tub (30) that stores seawater (W1) pumped up by the water supply pump (21) and accommodates salt-tolerant plants (P) to be cultivated; and a filter (27) that removes bacteria and unwanted matter from the seawater (W1) obtained from the sea (S); wherein the seawater (W1) from which the bacteria and the unwanted matter have been removed by the filter (27) is fed to the water tub (30).

Abstract: The present invention provides a plant cultivation method, which enables plant cultivation under high salinity environment for a long time. A method for hydroponic plant cultivation under high salinity environment, comprising a cultivation step of hydroponically growing a plant with a cultivation solution having a sodium chloride concentration of 1% by mass or more, during which a salt resistance imparting treatment is performed at least once by bringing a salt tolerance imparting agent into contact with at least a part of a root of the plant, thereby maintaining salt tolerance of the plant.

Abstract: A second resin-impregnated fiber sheet (12) contains fibers extending in a first direction. A third resin-impregnated fiber sheet (13) contains fibers extending in a second direction that is different from the first direction. A first main surface (1a) is provided with a plurality of first linear protruding portions (1a1) extending in the first direction. A second main surface (1b) is provided with a plurality of second linear protruding portions (1b1) extending in the second direction.

Abstract: The present invention provides a plant cultivation method, which enables plant cultivation under high salinity environment for a long time. A method for hydroponic plant cultivation under high salinity environment, comprising a cultivation step of hydroponically growing a plant with a cultivation solution having a sodium chloride concentration of 1% by mass or more, during which a salt resistance imparting treatment is performed at least once by bringing a salt tolerance imparting agent into contact with at least a part of a root of the plant, thereby maintaining salt tolerance of the plant.

Abstract: A sheet 1 of the present invention is a sheet including a first main surface 1a and a second main surface 2a having a plurality of protruding portions 2. The sheet 1 includes a first resin-impregnated fiber sheet 11, a second resin-impregnated fiber sheet 12, and a resin composition layer 13. The first resin-impregnated fiber sheet 11 forms the first main surface 1a. The second resin-impregnated fiber sheet 12 forms the second main surface 1b. The resin composition layer 13 fills space between the first resin-impregnated fiber sheet 11 and the second resin-impregnated fiber sheet 12. The melting viscosity of resin contained in the first and second resin-impregnated fiber sheets 11 and 12 at a temperature of 250° C. and a shear rate of 100 s?1 is lower than the melting viscosity of resin contained in the resin composition layer 13 under the same conditions.

Abstract: A hydroponic system (1) using seawater, wherein seawater (W1) is used for hydroponic cultivation of salt-tolerant plants, including a water supply pump (21) that pumps up, from the sea (S), seawater (W1) having a salinity, a bacteria content and an unwanted matter content are less than or equal to predetermined threshold values; a water tub (30) that stores seawater (W1) pumped up by the water supply pump (21) and accommodates salt-tolerant plants (P) to be cultivated; and a filter (27) that removes bacteria and unwanted matter from the seawater (W1) obtained from the sea (S); wherein the seawater (W1) from which the bacteria and the unwanted matter have been removed by the filter (27) is fed to the water tub (30).

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Abstract: The present invention is a method for forming a porous film of an inorganic substance on a base material by spraying fine particles of an inorganic substance on the base material such that the fine particles are bonded to the base material and bonded to one another, in which the fine particles include at least two kinds of fine particles which are small-size particles and large-size particles having different average particle sizes. According to the present invention, it is possible to provide a film forming method for forming a porous film formed of an inorganic substance without requiring a baking step, a body having a film formed thereon that is produced by the film forming method, and a dye-sensitized solar cell including the body having a film formed thereon.

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Abstract: A method for producing a semiconductor film, comprising spraying raw material particles to a substrate to form a semiconductor film on the substrate, wherein the raw material particles comprise semiconductor particles each having adsorbed on its surface an aggregation-suppressive substance which suppresses aggregation of the semiconductor particles.

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Abstract: A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Abstract: In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate. Spacers are provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.

Abstract: A driver circuit for use with a passive matrix or active matrix electro-optical display device such as a liquid crystal display is fabricated to occupy a reduced area. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. The driver circuit can be formed on a large-area substrate such as a glass substrate, while the display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate.

Abstract: A purpose of the invention is to provide a method for leveling a semiconductor layer without increasing the number and the complication of manufacturing processes as well as without deteriorating a crystal characteristic, and a method for leveling a surface of a semiconductor layer to stabilize an interface between the surface of the semiconductor layer and a gate insulating film, in order to achieve a TFT having a good characteristic. In an atmosphere of one kind or a plural kinds of gas selected from hydrogen or inert gas (nitrogen, argon, helium, neon, krypton and xenon), radiation with a laser beam in the first, second and third conditions is carried out in order, wherein the first condition laser beam is radiated for crystallizing a semiconductor film or improving a crystal characteristic; the second condition laser beam is radiated for eliminating an oxide film; and the third condition laser beam is radiated for leveling a surface of the crystallized semiconductor film.

Abstract: A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.

Abstract: A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.