Abstract: An etchant composition may include: a peroxosulfate; a cyclic amine compound; a first amphoteric compound including a carboxyl group; and a second amphoteric compound including a sulfone group, wherein the second amphoteric compound may be different from the first amphoteric compound.

Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.

Abstract: An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.

Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

Abstract: A display device includes: a first substrate including a display area and a non-display area disposed; a first semiconductor disposed in the display area; a second semiconductor disposed in the non-display area; a first data conductor overlapping the first semiconductor; a second data conductor overlapping the second semiconductor; a first shielding part overlapping the first semiconductor and disposed on the first data conductor; a second shielding part overlapping the second semiconductor and disposed on the second data conductor; an insulating layer disposed on the first shielding part and the second shielding part, wherein a second thickness of the second shielding part is larger than a first thickness of the first shielding part, and a fourth thickness of a second part of the insulating layer corresponding to the second shielding part is smaller than a third thickness of a first part of the insulating layer corresponding to the first shielding part.

Abstract: A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Abstract: An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.

Abstract: A photosensitive resin composition includes: a) an acryl-based copolymer obtained by copolymerizing i) a hydroxyl group-containing unsaturated compound; ii) an unsaturated carboxylic acid, an unsaturated carboxylic anhydride, or a mixture thereof; iii) an epoxy group-containing unsaturated compound; and iv) an olefin-based unsaturated compound, b) a 1,2-quinonediazide 5-sulfonic ester compound having a phenol compound including a compound represented by the above Chemical Formula A as ballast, c) a silane coupling agent, and d) a solvent.

Abstract: An etchant composition may include: a peroxosulfate; a cyclic amine compound; a first amphoteric compound including a carboxyl group; and a second amphoteric compound including a sulfone group, wherein the second amphoteric compound may be different from the first amphoteric compound.

Abstract: An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.

Abstract: A display device includes: a first substrate including a display area and a non-display area disposed; a first semiconductor disposed in the display area; a second semiconductor disposed in the non-display area; a first data conductor overlapping the first semiconductor; a second data conductor overlapping the second semiconductor; a first shielding part overlapping the first semiconductor and disposed on the first data conductor; a second shielding part overlapping the second semiconductor and disposed on the second data conductor; an insulating layer disposed on the first shielding part and the second shielding part, wherein a second thickness of the second shielding part is larger than a first thickness of the first shielding part, and a fourth thickness of a second part of the insulating layer corresponding to the second shielding part is smaller than a third thickness of a first part of the insulating layer corresponding to the first shielding part.

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Abstract: A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.

Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.

Abstract: A color filter array panel and a display device including the same are provided. The color filter array panel includes a substrate; a first pixel and a second pixel disposed adjacent to each other; a data line disposed on the substrate and between the first pixel and the second pixel; a first color filter disposed in the first pixel; a second color filter disposed in the second pixel, the first color filter and the second color filter overlap each other to form a color filter overlapped portion overlapping the data line; an inorganic layer disposed on the color filter overlapped portion; an organic layer disposed on the inorganic layer, the first color filter, and the second color filter; and a first pixel electrode disposed in the first pixel; and a second pixel electrode disposed in the second pixel The inorganic layer is disposed between the first pixel electrode and the second pixel electrode.

Abstract: An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.

Abstract: A plasma processing apparatus and a method for fabricating a semiconductor device using the same are provided. The plasma processing apparatus includes: a chuck stage configured to support a wafer thereon; a dielectric ring configured to surround a periphery of the chuck stage, the dielectric ring including a paraelectric material; and a dielectric constant controller configured to control a dielectric constant of the dielectric ring.

Abstract: A photomask is provided. A photomask, comprising: a transparent substrate; and a plurality of filter layers disposed on the transparent substrate, wherein the filter layers include a first filter layer, which selectively transmits first-wavelength light therethrough, and a second filter layer, which selectively transmits second-wavelength light therethrough.

Abstract: An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.