Abstract: A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.

Abstract: Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

Abstract: A method and apparatus for calibrating a position of an image sensor, and a method of detecting the position of an image sensor are provided. The method of calibrating the position of an image sensor includes: obtaining first image information corresponding to a first position of the image sensor and obtaining second image information corresponding to a second position of the image sensor, calculating cross-correlation values between the obtained first image information and second image information; determining whether or not the calculated cross-correlation values are symmetrical; setting a driving power value of the image sensor for moving the image sensor the distance between the first position to the second position as a reference driving power value for moving the image sensor one-pixel distance, if it is determined that the cross-correlation values are not symmetrical; and calibrating the position of the image sensor by using the set driving power value.

Abstract: Provided are a ferroelectric thin film having good crystallinity, improved surface roughness, and high density data storage capability, and a method of manufacturing a ferroelectric recording medium including the ferroelectric thin film. The method of manufacturing the ferroelectric thin film includes: forming an amorphous TiO2 layer on a substrate; forming a PbO(g) atmosphere on the amorphous TiO2 layer; and reacting the TiO2 layer with PbO(g) at a temperature of 400 to 650° C. to form a PbTiO3 ferroelectric thin film having a nanograin structure of 1 to 20 nm on the substrate.

Abstract: Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.

Abstract: A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided.

Abstract: A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip.

Abstract: Provided is a method of fabricating a semiconductor probe with a resistive tip. The method includes steps of forming a mask layer on a substrate doped with first impurities and forming first and second semiconductor electrode regions heavily doped with the second impurities on the substrate uncovered by the mask layer, annealing the first and second semiconductor electrode regions and diffusing the second impurities of the first and second semiconductor electrode regions to portions facing each other to form resistive regions lightly doped with the second impurities at the outer boundaries of the first and second semiconductor electrode regions, and patterning the mask layer in a predetermined shape and etching a portion of a top surface of the substrate not covered by the patterned mask layer to form a resistive tip.

Abstract: A high density data storage device and a data recording or reproduction method using the same, which can record or reproduce high density data without contact, thereby preventing data errors due to contact are provided. The high density data storage device uses a recording medium and a probe. The recording medium is a thin film made from phase change material or oxide resistance change material, and the probe has a tip formed in a lower portion thereof, which moves with a spacing from the top of the recording medium. Further, recording or reproduction of data is performed through electric field or heat emission, which is generated in the tip of the probe, without direct contact between the recording medium and the probe, so that it is possible to remove instability caused by contact between the recording medium and the probe and to stably record or reproduce data in or from the recording medium without errors.

Abstract: Provided are an image sensor for improving image quality and an image sensing method using the same, which can improve the quality of a sensed image without changing resolution of a color filter array and a photoelectric conversion semiconductor device for sensing an image. The image sensor for improving image quality includes: a scanner unit movable on a plane; a color filter array fixed on the scanner unit; and a photoelectric conversion semiconductor device including a plurality of pixels aligned beneath the color filter array.

Abstract: An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

Abstract: Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe.

Abstract: Disclosed is an image sensor capable of improving the resolution of images without modifying the resolution of a photoelectric conversion semiconductor device for sensing images and an image sensing method using the same. The image sensor is adapted to sense images through photoelectric conversion and includes a scanner unit adapted to move on a plane; a photoelectric conversion semiconductor device fixedly mounted on the scanner unit and having a number of pixels being arranged on a front surface; and an array of color filters arranged on the photoelectric conversion semiconductor device so as to correspond to the pixels. The image sensor improves the resolution of sensed images by sensing data of images, which cannot be sensed according to the related art, while using a conventional photoelectric conversion semiconductor device without modification, and without incurring further cost or degrading the performance.

Abstract: An XY stage module, a storage system including the same and a method for facating the XY stage module are provided. The XY stage module includes: a base; an XY stage horizontally moving above the base in a first direction and a second direction that is orthogonal to the first direction; a supporting unit disposed at the base for elastically supporting the XY stage; a stiffener for preventing the XY stage from being rotated; and a position sensor having a movable comb-shaped structure disposed at one side of the stiffener and having at least one movable comb and a fixed comb-shaped structure fixed on the base and having at least one fixed comb meshed with the movable comb to be separated at a predetermined gap for measuring a movement of the XY stage in the first direction and the second direction.

Abstract: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

Abstract: A multi-probe for writing data to and/or reading data from a recording medium. The multi-probe includes a plurality of probes. All of the probes are working probes for writing the data to and/or reading the data from the recording medium.

Abstract: An X-Y stage driver having a locking device and a data storage system having the X-Y stage driver. The X-Y stage driver includes an X-Y stage; a supporting unit that supports the X-Y stage and has elastic beams that support corners of the X-Y stage; a driving unit that drives the X-Y stage in a first direction and a second direction which is perpendicular to the first direction; a stiffener that prevents the X-Y stage from rotating; and a locking device that fixes the stiffener by an electrostatic force.

Abstract: A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.