Patents by Inventor Seung-bum Hong

Seung-bum Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070157479
    Abstract: An XY stage module, a storage system including the same and a method for fabricating the XY stage module are provided. The XY stage module includes: a base; an XY stage horizontally moving above the base in a first direction and a second direction that is orthogonal to the first direction; a supporting unit disposed at the base for elastically supporting the XY stage; a stiffener for preventing the XY stage from being rotated; and a position sensor having a movable comb-shaped structure disposed at one side of the stiffener and having at least one movable comb and a fixed comb-shaped structure fixed on the base and having at least one fixed comb meshed with the movable comb to be separated at a predetermined gap for measuring a movement of the XY stage in the first direction and the second direction.
    Type: Application
    Filed: October 12, 2006
    Publication date: July 12, 2007
    Inventors: Hong-sik Park, Ju-hwan Jung, Seung-bum Hong, Dong-ki Min
  • Publication number: 20070159193
    Abstract: An information reproducing apparatus and a method using a semiconductor probe are provided. The information reproducing apparatus includes a semiconductor probe including a semiconductor tip including a channel varying with an electric field generated by an information recording medium; a modulator applying a high frequency modulation signal to the semiconductor probe to form a modulation electric field so as to modulate an information signal induced by the electric field; a signal detector detecting a signal generated by the semiconductor probe; and a demodulator extracting the information signal modulated by the modulation electric field from the signal detected by the signal detector.
    Type: Application
    Filed: January 9, 2007
    Publication date: July 12, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-ki Min, Seung-bum Hong, Hong-sik Park
  • Publication number: 20070153430
    Abstract: A micro actuator having separated stages and a data storage apparatus employing the same are provided. The micro actuator includes: a supporting unit; stages that are elastically supported by the supporting unit, each stage having a mounting surface where a target driven body is mounted thereon, and arranged adjacent to each other; levers which are disposed between the stages, each lever having two ends respectively connected to adjacent stages, and which apply force to the adjacent stages so that when one of the stages is moved, an adjacent stage is moved in an opposite direction to a moving direction of the moved stage; and driving units which respectively provide a driving force to the stages.
    Type: Application
    Filed: December 4, 2006
    Publication date: July 5, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hong-sik Park, Seung-bum Hong, Dong-ki Min, Jong-youp Shim
  • Patent number: 7236327
    Abstract: An information storage medium and an apparatus adopting the information storage medium. The information storage medium includes: a substrate; a lower magnetic layer formed on the substrate; and an upper magnetic layer, the upper magnetic layer includes an alumina layer having cavities formed on the lower magnetic layer and a magnetic material that is formed in the cavities of the alumina layer, which magnetic material contacts the lower magnetic layer.
    Type: Grant
    Filed: December 29, 2004
    Date of Patent: June 26, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-dong Kim, Seung-bum Hong
  • Publication number: 20070137780
    Abstract: A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.
    Type: Application
    Filed: November 13, 2006
    Publication date: June 21, 2007
    Inventors: Hong-sik Park, Seung-bum Hong, Jong-youp Shim
  • Publication number: 20070119240
    Abstract: A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.
    Type: Application
    Filed: September 26, 2006
    Publication date: May 31, 2007
    Inventors: Hong-ski Park, Ju-hwan Jung, Hyoung-soo Ko, Seung-bum Hong
  • Publication number: 20070099309
    Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer.
    Type: Application
    Filed: December 18, 2006
    Publication date: May 3, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-bum Hong, In-kyeong Yoo, Ju-hwan Jung
  • Publication number: 20070051169
    Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
    Type: Application
    Filed: July 10, 2006
    Publication date: March 8, 2007
    Inventors: Ju-hwan Jung, Jun-soo Kim, Hyung-cheol Shin, Seung-bum Hong
  • Publication number: 20070047290
    Abstract: An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.
    Type: Application
    Filed: August 9, 2006
    Publication date: March 1, 2007
    Inventors: Seung-bum Hong, Jin-gyoo Yoo, Ju-hwan Jung, Simon Buehlmann
  • Publication number: 20070042522
    Abstract: A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
    Type: Application
    Filed: August 3, 2006
    Publication date: February 22, 2007
    Inventors: Hong-sik Park, Ju-hwan Jung, Hyoung-soo Ko, Seung-bum Hong
  • Publication number: 20070040116
    Abstract: A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
    Type: Application
    Filed: June 8, 2006
    Publication date: February 22, 2007
    Inventors: Hyoung-soo Ko, Ju-hwan Jung, Seung-bum Hong, Hong-sik Park
  • Patent number: 7170843
    Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer.
    Type: Grant
    Filed: July 2, 2003
    Date of Patent: January 30, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-bum Hong, In-kyeong Yoo, Ju-hwan Jung
  • Patent number: 7142077
    Abstract: A two-axis actuator having a large stage area and including includes a substrate, an anchor unit having sides approximately in a rectangular shape, fixed on the substrate, a plurality of first actuating parts actuating in a first direction and separated from the substrate within regions of both sides of the anchor unit, a plurality of second actuating parts actuating in a second direction between the first actuating parts, a rectangular shaped stage that actuates in the second direction, disposed above the second actuating parts, a third actuating part formed on the first actuating part, and elevated at a predetermined distance from the stage and the anchor unit, first direction deformable springs that support the first actuating part in inner parts of the anchor unit, and second direction deformable springs formed to fix the second actuating part in an inner part of the third actuating part.
    Type: Grant
    Filed: August 20, 2004
    Date of Patent: November 28, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-lock Baeck, Jong-up Jun, Ju-hwan Jung, Seung-bum Hong, Dong-ki Min, Hong-sik Park
  • Publication number: 20060263910
    Abstract: A data recording medium including a ferroelectric layer and a method of manufacturing the same are provided. In the data recording medium, a barrier layer, a conductive layer, and a seed layer are sequentially stacked on a substrate. A data recording layer is formed on the seed layer and has a vertical residual polarization.
    Type: Application
    Filed: February 17, 2006
    Publication date: November 23, 2006
    Inventors: Seung-bum Hong, Yun-seok Kim, Seung-hyun Kim, Kwang-soo No
  • Publication number: 20060252172
    Abstract: Provided is a method of fabricating a semiconductor probe with a resistive tip. The method includes steps of forming a mask layer on a substrate doped with first impurities and forming first and second semiconductor electrode regions heavily doped with the second impurities on the substrate uncovered by the mask layer, annealing the first and second semiconductor electrode regions and diffusing the second impurities of the first and second semiconductor electrode regions to portions facing each other to form resistive regions lightly doped with the second impurities at the outer boundaries of the first and second semiconductor electrode regions, and patterning the mask layer in a predetermined shape and etching a portion of a top surface of the substrate not covered by the patterned mask layer to form a resistive tip.
    Type: Application
    Filed: November 11, 2003
    Publication date: November 9, 2006
    Inventors: Hong-Sik Park, Ju-Hwan Jung, Seung-Bum Hong
  • Publication number: 20060226733
    Abstract: An electrostatic actuator and a method of driving the same are provided. The actuator controls the displacement of a target object by adjusting a voltage between fixed comb electrodes and a moving comb electrode. The actuator includes an actuator control signal generator generating an actuator control signal by pulse-width modulating an actuator driving signal and a carrier signal; and an actuator unit including the fixed comb electrodes and the moving comb electrode and adjusting the voltage according to the actuator control signal. Accordingly, the displacement can be easily controlled using the pulse-width-modulated actuator driving signal even when both the voltage of the actuator driving signal and the frequency of the carrier signal are high.
    Type: Application
    Filed: April 5, 2006
    Publication date: October 12, 2006
    Inventors: Dong-ki Min, Jin-ho Lee, Seung-bum Hong
  • Publication number: 20060211154
    Abstract: A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. Also disclosed is a method which includes forming on a substrate an electrode having wells and precursor features formed in the wells of the electrode, the precursor features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. The above first embodiment relates to non-embedded type media, and the above second embodiment relates to embedded type media.
    Type: Application
    Filed: March 21, 2006
    Publication date: September 21, 2006
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Simon Buehlmann, Seung-bum Hong
  • Publication number: 20060175644
    Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
    Type: Application
    Filed: February 7, 2006
    Publication date: August 10, 2006
    Inventors: Hyoung-soo Ko, Eun-sik Kim, Sung-dong Kim, Ju-hwan Jung, Hong-sik Park, Chul-min Park, Seung-bum Hong
  • Publication number: 20060157440
    Abstract: A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.
    Type: Application
    Filed: January 3, 2006
    Publication date: July 20, 2006
    Inventors: Ju-hwan Jung, Hyung-cheol Shin, Hyoung-soo Ko, Seung-bum Hong
  • Publication number: 20060145806
    Abstract: A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.
    Type: Application
    Filed: December 30, 2005
    Publication date: July 6, 2006
    Inventors: Sung-dong Kim, Eun-sik Kim, Ju-hwan Jung, Hyoung-soo Ko, Dong-ki Min, Hong-sik Park, Seung-bum Hong