Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing for providing a treating space for treating a substrate within; a support unit for supporting the substrate in the treating space; a bottom supply port for supplying a process fluid to the treating space; and a filler member positioned below the substrate supported on the support unit in the treating space, and wherein the filler member forms a buffer space facing the bottom supply port, and a passage is formed between the filler member and an inner wall of the housing and flows the process fluid which is introduced to the buffer space in a direction of the substrate.

Abstract: Disclosed are a hybrid structure using a graphene-carbon nanotube and a perovskite solar cell using the same. The hybrid structure includes a graphene-carbon nanotube formed by laminating a second graphene coated with a polymer on an upper surface of a first graphene coated with a carbon nanotube. The perovskite solar cell includes: a substrate; a first electrode formed on the substrate and including a fluorine doped thin oxide (FTO); an electron transfer layer formed on the first electrode and including a compact-titanium oxide (c-TiO2); a mesoporous-titanium oxide (m-TiO2) formed on the electron transfer layer; a perovskite layer formed on the m-TiO2 and including a perovskite compound; and a graphene-carbon nanotube hybrid structure formed on the perovskite layer.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a body; a fluid supply unit for supplying a treating fluid to a treating space within the body; and a fluid exhaust line for exhausting the treating fluid from the treating space, and wherein the body includes: a first body; a second body relatively moving with respect to the first body; and an anti-friction member for preventing a friction between the first body and the second body, and wherein the anti-friction member is configured continuously cover at least two surfaces among surfaces of the first body and the second body.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a drying fluid to the inner space; and a fluid exhaust unit configured to exhaust the drying fluid from the inner space, and wherein the fluid exhaust unit includes an exhaust line connected to the chamber; a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space at a set pressure; and a heating member installed at the pressure adjusting member or a back end of the pressure adjusting member.

Abstract: A substrate processing method includes forming a high surface tension liquid film by supplying high surface tension liquid on a substrate surface, replacing the high surface tension liquid film with low surface tension liquid by supplying the low surface tension liquid to a center area of a substrate so that the low surface tension liquid impinges on the high surface tension liquid film formed on the center area of the substrate, and supplying high surface tension liquid for a predetermined period of time during the supplying the low surface tension liquid.

Abstract: A substrate processing apparatus includes a process chamber including a first body and a second body that are coupled to each other to form a processing space therein, a clamping member configured to clamp the first body and the second body, and an anti-friction member mounted in a groove formed in a contact region between the first body or the second body and the clamping member.

Abstract: An apparatus for treating the substrate includes a process chamber having a first body and a second body which are combined with each other to have a treating space in which a substrate is treated, and a friction prevention member placed on a contact surface between the first body and the second body. The friction prevention member may have a groove formed at a surface corresponding to the contact surface. An adhesive for adhering the friction prevention member to the first body or adhering the friction prevention member to the second body may be provided in the groove. The groove may form an open-end pattern in which a first end of the open-end pattern is adjacent to a second end of the open-end pattern.

Abstract: An apparatus for treating a substrate includes a vessel having a sealable process space formed therein in which the substrate is accommodated, a supply port that is provided inside a wall of the vessel and that supplies a process fluid into the process space, an exhaust port provided inside the wall of the vessel and spaced apart from the supply port, and a buffer member provided in the process space, the buffer member being provided in a position overlapping with the supply port and the exhaust port when viewed from above. The buffer member includes a sidewall portion that is located outward of the supply port and the exhaust port and that makes contact with the wall of the vessel and an upper wall portion having a through-hole formed therein to correspond to a center of the substrate, the through-hole forming a straight flow path in an up/down direction.

Abstract: An embodiment of the present invention provides a substrate processing method. The substrate processing method, which performs a liquid processing process by injecting a processing liquid on a substrate on a spin chuck disposed inside a plurality of recovery cups that are disposed in multiple layers, includes: in a transitional period of time in which height change of any one of the recovery cups occurs, adjusting rotational speed of the spin chuck, which is configured to support the substrate, in conjunction with the height change of the recovery cup.

Abstract: A sealing member for use in sealing a chamber for treating a substrate, the sealing member inserted in a groove formed in the chamber, includes a bottom part, a top part opposite the bottom part, an inner part connecting a first side of the bottom part to the top part, an outer part opposite the inner part and connecting a second side of the bottom part to the top part, and a recessed portion between the top part and the outer part.

Abstract: A unit for removing an adhesive layer formed in a processing chamber includes an ultrasonic generator, and a wiper soaked in a cleaning liquid. The wiper is provided to surround the ultrasonic generator.

Abstract: The inventive concept provides a support unit for supporting a substrate. The support unit includes a support plate that has an interior space and on which the substrate is placed, a heating member that is provided in the interior space and that heats the substrate placed on the support plate, a heat insulating plate provided in the interior space and disposed under the heating member, a reflective plate provided in the interior space and disposed under the heat insulating plate, and a heat dissipation plate provided in the interior space and disposed under the a reflective plate.

Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space for treating the substrate; a fluid supply unit for supplying fluid to the treatment space, wherein the fluid supply unit includes: a supply pipe connected to the treatment space to supply the fluid to the treatment space; a pump installed in the supply pipe to provide flow pressure to the fluid; a vent line installed between the pump and the process chamber to discharge pressure in the fluid to an outside; a relief valve installed in the vent line to open and close the vent line; and a reservoir installed between the pump and a branch point wherein the vent line branches from the supply pipe, wherein the reservoir has a cross-sectional area larger than a cross-sectional area of a portion of the supply pipe located between the pump and the branch point.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Abstract: An apparatus for supporting a substrate includes a rotatable spin head that supports the substrate, a hollow shaft that is connected with the spin head and that transmits torque to the spin head, a nozzle assembly that is disposed in an interior space of the spin head so as not to rotate and that supplies a treatment liquid to a backside of the substrate, and a sealing member that seals a gap between the spin head and the nozzle assembly using a magnetic fluid.

Abstract: A substrate treatment apparatus of The present disclosure includes: a tube connecting a storage tank in which a chemical liquid is stored and an outlet through which the chemical liquid is discharged; a venturi nozzle installed in the tube and including a chemical liquid discharge part configured to discharge to an object; and a first negative pressure control valve installed between the venturi nozzle and the outlet in the tube, wherein, when the first negative pressure control valve is opened, negative pressure is generated in the venturi nozzle to limit discharge of the chemical liquid from the chemical liquid discharge part.

Abstract: An embodiment of the present invention provides a substrate processing method. The substrate processing method, which performs a liquid processing process by injecting a processing liquid on a substrate on a spin chuck disposed inside a plurality of recovery cups that are disposed in multiple layers, includes: in a transitional period of time in which height change of any one of the recovery cups occurs, adjusting rotational speed of the spin chuck, which is configured to support the substrate, in conjunction with the height change of the recovery cup.

Abstract: A substrate processing method includes forming a high surface tension liquid film by supplying high surface tension liquid on a substrate surface, replacing the high surface tension liquid film with low surface tension liquid by supplying the low surface tension liquid to a center area of a substrate so that the low surface tension liquid impinges on the high surface tension liquid film formed on the center area of the substrate, and supplying high surface tension liquid for a predetermined period of time during the supplying the low surface tension liquid.

Abstract: This invention relates to a hydrogen spillover-based catalyst and use thereof, wherein a hydrogen activation metal cluster is dispersed in the form of being encapsulated in a crystalline or amorphous aluminosilicate matrix which is partially or fully structurally collapsed zeolite, thereby exhibiting high hydroprocessing or dehydrogenation activity and suppressed C—C hydrogenolysis activity.