Abstract: Nanowire-based gate all-around transistor devices having one or more active nanowires and one or more inactive nanowires are described herein. Methods to fabricate such devices are also described. One or more embodiments of the present invention are directed at approaches for varying the gate width of a transistor structure comprising a nanowire stack having a distinct number of nanowires. The approaches include rendering a certain number of nanowires inactive (i.e. so that current does not flow through the nanowire), by severing the channel region, burying the source and drain regions, or both. Overall, the gate width of nanowire-based structures having a plurality of nanowires may be varied by rendering a certain number of nanowires inactive, while maintaining other nanowires as active.

Abstract: A microplasma device includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel. At least one of the electrodes is encapsulated within the thick metal oxide layer. A method of fabricating a microcavity or microchannel plasma device includes anodizing a flat or gently curved or gently sloped metal substrate to form a thick layer of metal oxide consisting essentially of nanopores that are perpendicular to the surface of the metal substrate. Material removal is conducted to remove metal oxide material to form a microcavity or microchannel in the thick layer of metal oxide.

Abstract: The invention provides microcavity plasma devices and arrays that are formed in layers that also seal the plasma medium, i.e., gas(es) and/or vapors. No separate packaging layers are required and additional packaging can be omitted if it is desirable to do so. A preferred microcavity plasma device includes first and second thin layers that are joined together. A half ellipsoid microcavity or plurality of half ellipsoid microcavities is defined in one or both of the first and second thin layers, and electrodes are arranged with respect to the microcavity to excite a plasma within said microcavities upon application of a predetermined voltage to the electrodes. A method for forming a microcavity plasma device having a plurality of half or full ellipsoid microcavities in one or both of first and second thin layers is also provided by a preferred embodiment. The method includes defining a pattern of protective polymer on the first thin layer.

Abstract: The invention provides microcavity plasma devices and arrays that are formed in layers that also seal the plasma medium, i.e., gas(es) and/or vapors. No separate packaging layers are required and additional packaging can be omitted if it is desirable to do so. A preferred microcavity plasma device includes first and second thin layers that are joined together. A half ellipsoid microcavity or plurality of half ellipsoid microcavities is defined in one or both of the first and second thin layers, and electrodes are arranged with respect to the microcavity to excite a plasma within said microcavities upon application of a predetermined voltage to the electrodes. A method for forming a microcavity plasma device having a plurality of half or full ellipsoid microcavities in one or both of first and second thin layers is also provided by a preferred embodiment. The method includes defining a pattern of protective polymer on the first thin layer.

Abstract: Microcavity plasma devices and arrays of microcavity plasma devices are provided that have a reduced excitation voltage. A trigger electrode disposed proximate to a microcavity reduce the excitation voltage required between first and second electrodes to ignite a plasma in the microcavity when gas(es) or vapor(s) (or combinations thereof) are contained within the microcavity. The invention also provides symmetrical microplasma devices and arrays of microcavity plasma devices for which current waveforms are the same for each half-cycle of the voltage driving waveform. Additionally, the invention also provides devices that have standoff portions and voids that can reduce cross talk. The devices are preferably also used with a trigger electrode.

Abstract: Microcavity plasma devices and arrays of microcavity plasma devices are provided that have a reduced excitation voltage. A trigger electrode disposed proximate to a microcavity reduce the excitation voltage required between first and second electrodes to ignite a plasma in the microcavity when gas(es) or vapor(s) (or combinations thereof) are contained within the microcavity. The invention also provides symmetrical microplasma devices and arrays of microcavity plasma devices for which current waveforms are the same for each half-cycle of the voltage driving waveform. Additionally, the invention also provides devices that have standoff portions and voids that can reduce cross talk. The devices are preferably also used with a trigger electrode.

Abstract: An apparatus and method for high-resolution reflectometry that operates simultaneously in both the time and frequency domains, utilizing time-frequency signal analysis and a chirp signal multiplied by a Gaussian time envelope. The Gaussian envelope provides time localization, while the chirp allows one to excite the system under test with a swept sinewave covering a frequency band of interest. High resolution in detection of the reflected signal is provided by a time-frequency cross correlation function. The high-accuracy localization of faults in a wire/cable can be achieved by measurement of time delay offset obtained from the frequency offset of the reflected signal. The apparatus enables one to execute an automated diagnostic procedure of a wire/cable under test by control of peripheral devices.

Abstract: An apparatus and method for high-resolution reflectometry that operates simultaneously in both the time and frequency domains, utilizing time-frequency signal analysis and a chirp signal multiplied by a Gaussian time envelope. The Gaussian envelope provides time localization, while the chirp allows one to excite the system under test with a swept sinewave covering a frequency band of interest. High resolution in detection of the reflected signal is provided by a time-frequency cross correlation function. The high-accuracy localization of faults in a wire/cable can be achieved by measurement of time delay offset obtained from the frequency offset of the reflected signal. The apparatus enables one to execute an automated diagnostic procedure of a wire/cable under test by control of peripheral devices.