Abstract: A shoe care device includes: an inner cabinet having an accommodation space configured to accommodate shoes; a connection path constituting a flow path, a blowing part disposed in the connection path and configured to blow the air; a dehumidifying part disposed in the connection path and configured to dehumidify the air; a door configured to open and close the front surface of the inner cabinet; and a control panel provided outside the door to allow a user to input a control signal for the shoe care device. The control panel includes: a fixed UI section, and in which a first control UI configured to change whether to perform display is disposed; and a variable UI section which is provided to have an inclination angle with the front surface of the door, and in which a second control UI configured to change whether to perform display and types is disposed.

Abstract: A shoe care apparatus includes an inner cabinet, a door, a nozzle duct, a nozzle, and a nozzle handle. The inner cabinet forms an accommodation space in which shoes are accommodated. The inner cabinet has a main opening. The door opens and closes the main opening. The nozzle duct is hinge-coupled to the inner cabinet. The nozzle duct forms a passage for air that is being forcibly blown. The nozzle is coupled to an end portion of the nozzle duct. The nozzle handle is formed on the nozzle so as to adjust the angle of the nozzle duct. The inner cabinet includes an inner upper plate that constitutes the ceiling of the accommodation space. The inner upper plate includes a first region and a second region. The second region extends from in front of the first region. The second region forms an upwardly inclined surface.

Abstract: A shoe care apparatus includes an inner cabinet, a door, a connecting flow path, a blower unit, a dehumidifying unit, a steam generator, and a steam inlet. The steam inlet forms an entrance through which the steam flows into an accommodation space of the inner cabinet. The door is located at the front portion of the inner cabinet, and the steam inlet is located at the center of the rear side of the accommodation space.

Abstract: A shoes care device includes an inner cabinet having an accommodation space configured to accommodate shoes; a shelf holder is provided on an inner side wall; an outlet provided in a bottom surface of the inner cabinet to allow air inside the inner cabinet is suctioned; a connection path constituting a flow path through which the air in the accommodation space is discharged from the inner cabinet through the suction port and then introduced back into the accommodation space; a blowing part disposed in the connection path to blow air; a dehumidifying part disposed in the connection path to dehumidify air; and an auxiliary shelf installed to be mounted on the shelf holder so that the shoes can be seated on an upper surface of the auxiliary shelf.

Abstract: A shoes care device includes an inner cabinet configured to accommodate shoes inside; a outlet configured to suck air inside the inner cabinet; a nozzle duct having one end hinge-coupled to the inner cabinet so as to protrude into the inner cabinet, and which forms a passage for air; a nozzle hinge-coupled to the other end of the nozzle duct so that the shoes can be inserted into the inner cabinet, and configured to inject air into the shoes; a nozzle connector, of which one end is hinge-coupled to the inner cabinet and of which the other end is hinge-coupled to the nozzle; a connection path from the suction to the nozzle; a blowing part in the connection path and configured to ventilate air from the outlet to the nozzle; and a dehumidifying part in the connection path and capable of dehumidifying the ventilated air.

Abstract: A shoes care device includes an inner cabinet having an accommodation space configured to accommodate shoes; a outlet formed on a bottom of the inner cabinet so as to suck air inside the inner cabinet; a connection path forming a flow path through which air in the accommodation space is discharged from the inner cabinet through the outlet and then introduced back into the accommodation space; a blowing part disposed in the connection path and configured to ventilate air; a dehumidifying part disposed in the connection path and configured to dehumidify air; and a main shelf installed to cover the bottom of the inner cabinet and having an upper surface on which the shoes can be settled.

Abstract: Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a vertical field-effect transistor (VFET) that includes a bottom source/drain region in a substrate, a channel region on the bottom source/drain region, a top source/drain region on the channel region, and a gate structure on a side of the channel region. The channel region may have a cross-shaped upper surface.

Abstract: A vertical field-effect transistor (VFET) includes: a fin structure on a substrate; a gate structure including a gate dielectric layer on an upper portion of a sidewall of the fin structure, and a conductor layer on a lower portion of the gate dielectric layer; a top source/drain (S/D) region above the fin structure and the gate structure; a bottom S/D region below the fin structure and the gate structure; a top spacer on an upper portion of the gate dielectric layer, and between the top S/D region and a top surface of the conductor layer; and a bottom spacer between the gate structure and the bottom S/D region. A top surface of the gate dielectric layer is positioned at the same or substantially same height as or positioned lower than a top surface of the top spacer, and higher than the top surface of the conductor layer.

Abstract: Integrated circuit devices including standard cells are provided. The standard cells may include a first vertical field effect transistor (VFET) including a first channel region and having a first conductivity type and a second VFET including a second channel region and having a second conductivity type that is different from the first conductivity type. Each of the first channel region and the second channel region may extend longitudinally in a first horizontal direction, and the first channel region may be spaced apart from the second channel region in a second horizontal direction that is perpendicular to the first horizontal direction.

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

Abstract: A device inserted into a living body to generate an anticancer material is disclosed. The disclosed device comprises: an electric energy converter which receives an external signal to convert the external signal into electric energy; at least one electrode pair for causing electrolysis in a body fluid inside the living body by using the electric energy converted by the electric energy converter; and a light emitter for emitting light at a by-product produced by means of electrolysis by using the electric energy converted by the electric energy converter.

Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

Abstract: A cell architecture and a method for placing a plurality of cells to form the cell architecture are provided. The cell architecture includes at least a 1st cell and a 2nd cell placed next to each other in a cell width direction, wherein the 1st cell includes a one-fin connector which is formed around a fin among a plurality of fins of the 1st cell, and connects a vertical field-effect transistor (VFET) of the 1st cell to a power rail of the 1st cell, wherein a 2nd cell includes a connector connected to a power rail of the 2nd cell, wherein the fin of the 1st cell and the connector of the 2nd cell are placed next to each other in the cell width direction in the cell architecture, and wherein the one-fin connector of the 1st cell and the connector of the 2nd cell are merged.

Abstract: A cell architecture and a method for placing a plurality of cells to form the cell architecture are provided. The cell architecture includes at least a 1st cell and a 2nd cell placed next to each other in a cell width direction, wherein the 1st cell includes a one-fin connector which is formed around a fin among a plurality of fins of the 1st cell, and connects a vertical field-effect transistor (VFET) of the 1st cell to a power rail of the 1st cell, wherein a 2nd cell includes a connector connected to a power rail of the 2nd cell, wherein the fin of the 1st cell and the connector of the 2nd cell are placed next to each other in the cell width direction in the cell architecture, and wherein the one-fin connector of the 1st cell and the connector of the 2nd cell are merged.

Abstract: An image of a space in which a mobile robot travels may be captured, and, in the case in which personal information is included in the captured image, the image including the personal information may be covered with a specific color such that the personal information is not visible, and the image may be replaced with an image including no personal information. As a result, it is possible to prevent the personal information from being exposed. In order to determine whether personal information is included in an image and to replace the image including the personal information with an image including no personal information, an object detection neural network and a frame prediction neural network may be used. In addition, input and output of an image may be performed in an Internet of Things (IoT) environment using a 5G network.

Abstract: A vertical field-effect transistor (VFET) device and a method of manufacturing the same are provided. The VFET device includes: a fin structure formed on a substrate; a gate structure including a gate dielectric layer formed on an upper portion of a sidewall of the fin structure, and a conductor layer formed on a lower portion of the gate dielectric layer; a top source/drain (S/D) region formed above the fin structure and the gate structure; a bottom S/D region formed below the fin structure and the gate structure; a top spacer formed on an upper portion of the gate dielectric layer, and between the top S/D region and a top surface of the conductor layer; and a bottom spacer formed between the gate structure and the bottom S/D region. A top surface of the gate dielectric layer is positioned at the same or substantially same height as or positioned lower than a top surface of the top spacer, and higher than the top surface of the conductor layer.

Abstract: A method for manufacturing a fin structure of a vertical field effect transistor (VFET) includes: (a) patterning a lower layer and an upper layer, deposited on the lower layer, to form two patterns extended in two perpendicular directions, respectively; (b) forming a first spacer and a second spacer side by side in the two patterns along sidewalls of the lower layer and the upper layer exposed through the patterning; (c) removing the first spacer, the second spacer and the upper layer above a level of a top surface of the lower layer, and the first spacer below the level of the top surface of the lower layer and exposed through the two patterns in the plan view; (d) removing the lower layer, the upper layer, and the second spacer remaining on the substrate after operation (c); and (e) etching the substrate downward except a portion thereof below the first spacer remaining on the substrate after operation (d), and removing the remaining first spacer, thereby to obtain the fin structure.

Abstract: A method for manufacturing a fin structure for a vertical field effect transistor (VFET) includes: forming on a substrate mandrels having at least one first gap therebetween; forming first spacers on side surfaces of the mandrels such that at least one second gap, smaller than the first gap, is formed between the first spacers; forming a second spacer on side surfaces of the first spacers; removing the mandrels and the first spacers to leave the second spacer on the side surfaces of the first spacers; removing the second spacer, on the side surfaces of the first spacers, at a predetermined portion so that the remaining second spacer has a same two-dimensional (2D) shape as the fin structure; and removing a portion of the substrate, except below the remaining second spacer, and the remaining second spacer so that the substrate below the remaining second spacer forms the fin structure.

Abstract: Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a vertical field-effect transistor (VFET) that includes a bottom source/drain region in a substrate, a channel region on the bottom source/drain region, a top source/drain region on the channel region, and a gate structure on a side of the channel region. The channel region may have a cross-shaped upper surface.