Abstract: a memory module test system for testing a plurality of memory modules includes a plurality buffers in one-to-one correspondence the plurality of memory modules, each of the buffers including a self-test engine for testing a corresponding memory module. The test system further includes an interface configured to receive a test program for testing the memory module, and a gate array configured to transmit the test program to the buffers using a Joint Test Action Group (JTAG) protocol and to read test results of the test program from the buffers using the JTAG protocol.

Abstract: A memory module, a memory unit, and a hub with a non-periodic clock and methods for using the same. An example memory module may include a phased locked loop, receiving an external, periodic clock and generating one or more internal periodic clocks and a plurality of memory units, receiving one of the internal periodic clocks or a non-periodic clock from an external source.

Abstract: A memory module test system including at least one memory module. The at least one memory module includes a first hub and a plurality of semiconductor memory devices. The system includes a tester for testing the at least one memory module. A second hub is located between the first hub and the tester. The second hub is for converting a memory command and memory data output from the tester into packet data and transmits the packet data to the first hub. The second hub converts the packet data output from the first hub into memory data and transmits the memory data to the tester.

Abstract: A memory module includes a plurality of data ports configured to receive/transmit associated data and a plurality of memory devices. The plurality of memory devices include a first set of the memory devices in at least one rank, each memory device of the first set being coupled to each of the associated data ports, and a second set of the memory devices in at least one other rank, each memory device of the second set being configured to receive/transmit the associated data for the memory device through at least each associated memory device of the first set.

Abstract: Methods and apparatuses for entering at least one memory into a test mode are provided. At least one test MRS bit may be stored in a first register for controlling the memory. At least one test MRS code may be programmed into a second register. Each of the at least one bits stored in the first register may correspond one of the at least one test MRS codes stored in the second register.

Abstract: A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of a memory, providing first expected data to the hub of the memory module, outputting second data stored at the first address of the memory to the hub of the memory module, and comparing the second data with the first expected data.

Abstract: A memory module testing apparatus and method include a test slot adapted to receive a target memory module, wherein the target memory module includes a first memory unit to store information related to the target memory module. The memory module testing apparatus further includes a second memory unit adapted to store information related to a memory module, and a first switching unit adapted to selectively provide a driving signal to at least one of the first memory unit and the second memory unit.

Abstract: A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of a memory, providing first expected data to the hub of the memory module, outputting second data stored at the first address of the memory to the hub of the memory module, and comparing the second data with the first expected data.

Abstract: A memory module and related method are disclosed. The memory module comprises a clock generator configured to generate first and second internal clock signals in relation to an external clock signal, and a register configured to receive the first and second internal clock signals. The register stores an external control/address signal in response to the first internal clock signal and transmits an internal control/address signal derived from the external control/address in response to the second internal control/address signal.

Abstract: Methods and apparatuses for entering at least one memory into a test mode are provided. At least one test MRS bit may be stored in a first register for controlling the memory. At least one test MRS code may be programmed into a second register. Each of the at least one bits stored in the first register may correspond one of the at least one test MRS codes stored in the second register.

Abstract: A memory module and related method are disclosed. The memory module comprises a clock generator configured to generate first and second internal clock signals in relation to an external clock signal, and a register configured to receive the first and second internal clock signals. The register stores an external control/address signal in response to the first internal clock signal and transmits an internal control/address signal derived from the external control/address in response to the second internal control/address signal.

Abstract: A memory module testing apparatus that comprises a test slot adapted to receive a target memory module, wherein the target memory module comprises a first memory unit adapted to store information related to the target memory module, is disclosed. The memory module testing apparatus further comprises a second memory unit adapted to store information related to a memory module, and a first switching unit adapted to selectively provide a driving signal to at least one of the first memory unit and the second memory unit. A memory module testing method for the memory module testing apparatus is also disclosed.

Abstract: A semiconductor memory device capable of determining an operation mode by using states of data pins, and an operation mode determining method for the same are disclosed. The semiconductor memory device includes at least one MRS input pad, at least one data input pad, and an operation mode determining circuit. The operation mode determining circuit generates an operation mode determining signal, when an MRS command input through the MRS input pad corresponds to a predetermined MRS command and data signals input through the data input pad or pads include a predetermined combination. Accordingly, the efficiency in the manufacturing and producing processes may be improved by determining the operation mode of the semiconductor memory device in a module assembly process.

Abstract: A method of testing an integrated circuit includes providing a bank access sequence received to a register in the integrated circuit, generating a test pattern sequence based on the bank access sequence, and performing a Built-In Self Test (BIST) operation on the integrated circuit based on the generated test pattern sequence.

Abstract: A memory module, a memory unit, and a hub with a non-periodic clock and methods for using the same. An example memory module may include a phased locked loop, receiving an external, periodic clock and generating one or more internal periodic clocks and a plurality of memory units, receiving one of the internal periodic clocks or a non-periodic clock from an external source.

Abstract: A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of a memory, providing first expected data to the hub of the memory module, outputting second data stored at the first address of the memory to the hub of the memory module, and comparing the second data with the first expected data.

Abstract: A method of entering memory module mounted on a memory system or a plurality of memories mounted on the memory module into a test mode, and a first register and a second register for performing the method are introduced. Each of the memory manufacturers provides a different MRS code for entering the memory into the test mode and a different method of entering the memory into the test mode from one another. As a result, the number of the test MRS is stored in the first register for controlling the memory, and the test MRS codes are programmed into the second register. Additionally, each of the bits stored in the first register used for determining the number of the test MRS corresponds to each of the second registers that store a corresponding test MRS code, respectively.

Abstract: A memory module test system including at least one memory module. The at least one memory module includes a first hub and a plurality of semiconductor memory devices. The system includes a tester for testing the at least one memory module. A second hub is located between the first hub and the tester. The second hub is for converting a memory command and memory data output from the tester into packet data and transmits the packet data to the first hub. The second hub converts the packet data output from the first hub into memory data and transmits the memory data to the tester.

Abstract: An integrated circuit device includes a delay circuit that is configured to delay a clock signal and is further configured to generate an output data signal in response to the delayed clock signal and an input data signal. Multiple devices are configured to respectively receive the output data signal in response to the clock signal.

Abstract: An integrated circuit device includes a delay circuit that is configured to delay a clock signal and is further configured to generate an output data signal in response to the delayed clock signal and an input data signal. Multiple devices are configured to respectively receive the output data signal in response to the clock signal.