Abstract: A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.

Abstract: Provided is a semiconductor device for applying common source lines with individual bias voltages. The device includes a substrate, cell transistors arrayed in a cell matrix shape on the substrate and configured to have gate insulating patterns, gate electrodes, common source regions, drain regions and channel regions. Word lines are configured to electrically interconnect the gate electrodes with each other. Common source lines are shared between only a pair of the neighboring word lines and are configured to electrically interconnect the common source regions with each other. Drain metal contacts and source metal contacts are arranged in a straight line on the drain regions. Bit lines are electrically connected to the drain metal contacts. And impurity regions are configured to control the threshold voltage of the channel regions.

Abstract: The present invention provides an arm model apparatus for intravenous injection training, comprising: an arm model having an insertion grooved recess formed on a top thereof, the arm model being formed such that the arm model are twisted so as to allow the back of a hand part and a cubital fossa to be oriented upwardly; a skin pad detachably mounted into the insertion grooved recess and having a blood vessel-imitating tube formed therein; a pump drive unit connected to the a blood vessel-imitating tube by a pad connecting tube; and a liquid blood supply container connected to the pump drive unit by a container connecting tube and configured to supply blood stored therein to the blood vessel-imitating tube. The inventive arm model apparatus implements a realistic skin sensation as if a syringe needle penetrated through the blood vessel of the human body through the arm model.

Abstract: Disclosed is a photosensitive resin composition suitable for use in a transflective liquid crystal display (LCD). The photosensitive resin composition uses, as an alkali-soluble binder resin, a blend of two kinds of binder resins. The first binder resin has a weight average molecular weight greater than or equal to 1,000 but lower than 20,000 and contains no reactive group. The second binder resin has a weight average molecular weight greater than or equal to 20,000 but lower than 80,000 and contains reactive groups. The photosensitive resin composition has good adhesion to an underlying substrate while forming a high resolution fine pattern.

Abstract: A method of programming a nonvolatile semiconductor memory device using a negative bias voltage. The method includes turning ON the string selection transistors connected to selected bit lines and turning OFF the string selection transistors connected to unselected bit lines in the same memory block, in a program mode. This can be achieved by applying a negative bias voltage to a bulk substrate and applying a voltage having a voltage level higher than the threshold voltage of string selection transistors connected to selected bit lines and lower than the threshold voltage of string selection transistors connected to unselected bit lines. The method may reduce programming disturbance between a selected cell string and an unselected cell string.

Abstract: Disclosed herein is a battery module including at least one battery cell constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case such that electrode leads of the electrode assembly protrude outside, wherein, when external impacts are directly or indirectly applied to the battery cell, with the result that the electrode leads move toward the electrode assembly of the battery cell, the external impacts are absorbed by the deformation of the electrode leads or the deformation of predetermined regions (‘electrode lead facing parts’) of the module in direct contact with or adjacent to the electrode leads, whereby the occurrence of a short circuit due to the contact between the electrode assembly and the electrode leads is prevented.

Abstract: Disclosed herein is a secondary battery including an electrode assembly of a cathode/separator/anode structure mounted in a pouch-shaped battery case in a sealed state, wherein a residue portion, which is not sealed (non-sealing residue portion), is defined between a sealing portion of the battery case and the electrode assembly for collecting generated gas, and the non-sealing residue portion is formed by mounting the electrode assembly between upper and lower laminate sheets, at least one of which has a receiving part of a size approximately corresponding to the electrode assembly, sealing three sides of the upper and lower laminate sheets, including two sides where electrode terminals are disposed, among four sides of the upper and lower laminate sheets, injecting an electrolyte in the battery case through the non-sealing portion, and sealing the non-sealing portion such that the resultant sealing portion is spaced a predetermined width from the receiving part.

Abstract: Disclosed herein is a plate-shaped secondary battery constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case, and the battery case is sealed by thermal welding, wherein the secondary battery has at least one-way exhaust member, mounted at a sealed portion, formed at the outer circumference of an electrode assembly receiving part of the battery case, for allowing internal high-pressure gas to be exhausted out of a battery cell and preventing external gas from being introduced into the battery cell. The secondary battery according to the present invention has the effect of effectively exhausting internal high-pressure gas generated during the abnormal operation of the battery, such as overcharge, out of the battery case, while maintaining the sealability of the battery case, thereby simultaneously improving the efficiency and safety of the battery.

Abstract: A method of programming a nonvolatile memory device comprises applying positive pulses and negative pulses simultaneously to a memory cell array to program at least one memory cell included in the memory cell array.

Abstract: A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.

Abstract: Disclosed herein is a plate-shaped secondary battery constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case, and the battery case is sealed by thermal welding, wherein the secondary battery has at least one valve (one-way exhaust valve), having a small thickness, mounted at a sealed portion, formed at the outer circumference of an electrode assembly receiving part of the battery case, for allowing internal high-pressure gas to be exhausted out of a battery cell and preventing external gas from being introduced into the battery cell. The secondary battery according to the present invention has the effect of effectively exhausting internal high-pressure gas generated during the abnormal operation of the battery, such as overcharge, out of the battery case, while maintaining the sealability of the battery case, thereby simultaneously improving the efficiency and safety of the battery.

Abstract: A method of programming a nonvolatile semiconductor memory device using a negative bias voltage. The method includes turning ON the string selection transistors connected to selected bit lines and turning OFF the string selection transistors connected to unselected bit lines in the same memory block, in a program mode. This can be achieved by applying a negative bias voltage to a bulk substrate and applying a voltage having a voltage level higher than the threshold voltage of string selection transistors connected to selected bit lines and lower than the threshold voltage of string selection transistors connected to unselected bit lines. The method may reduce programming disturbance between a selected cell string and an unselected cell string.

Abstract: Provided is a semiconductor device for applying common source lines with individual bias voltages. The device includes a substrate, cell transistors arrayed in a cell matrix shape on the substrate and configured to have gate insulating patterns, gate electrodes, common source regions, drain regions and channel regions. Word lines are configured to electrically interconnect the gate electrodes with each other. Common source lines are shared between only a pair of the neighboring word lines and are configured to electrically interconnect the common source regions with each other. Drain metal contacts and source metal contacts are arranged in a straight line on the drain regions. Bit lines are electrically connected to the drain metal contacts. And impurity regions are configured to control the threshold voltage of the channel regions.

Abstract: A semiconductor device has a first semiconductor layer including a first circuit, a second semiconductor layer disposed on the first semiconductor layer and having a second circuit, and a via extending through portions of the first and second semiconductor layers and by which the first and second circuits are electrically connected. One of the circuits is a logic circuit and the other of the circuits is a memory circuit. The semiconductor device is manufactured by fabricating transistors of the logic and memory circuits on respective substrates, stacking the substrates, and electrically connecting the logic and memory circuits with a via.

Abstract: Disclosed herein are an electrode assembly including a plurality of unit cells folded by a continuous separation film wherein the unit cells are arranged on the separation film such that electrode taps of the unit cells face each other, the separation film has openings corresponding to the electrode taps of the unit cells, and the electrode assembly is manufactured by folding the unit cells in the longitudinal (lengthwise) direction of the separation film while the unit cells are disposed such that the electrode taps of the unit cells are inserted into the corresponding openings, and an electrochemical cell, such as a secondary battery, including the same. The electrode assembly according to the present invention is a hybrid type electrode assembly solving the problems of the jelly-roll type electrode assembly and the stacking type electrode assembly.

Abstract: According to one embodiment, a semiconductor memory device can be generally characterized as including a gate insulating layer on a semiconductor substrate, a floating gate on the gate insulating layer and a word line disposed on one side of the floating gate. A first side of the floating gate facing the word line may include a projecting portion projecting toward the word line. A tip of the projecting portion may include a corner that extends substantially perpendicularly with respect to a top surface of the semiconductor substrate.

Abstract: Disclosed are pairs of semiconductor flash memory cells including first and second source lines formed in a semiconductor substrate, semiconductor pillars extending from the substrate between the source lines, first and second charge storage structures formed on opposite side surfaces of the semiconductor pillar and separated by trench isolation structures. The x and y pitch separating adjacent semiconductor pillars in the memory cell array are selected whereby forming the trench isolation structures serves to separate both charge storage structures and conductive structures provided on opposite sides of a semiconductor pillars. Also disclosed are methods of fabricating such structures whereby the density of flash memory devices, particularly NOR flash memory devices, can be improved.

Abstract: Disclosed herein is a plate-shaped secondary battery constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case, and the battery case is sealed by thermal welding, wherein the secondary battery has at least one valve (one-way exhaust valve), having a small thickness, mounted at a sealed portion, formed at the outer circumference of an electrode assembly receiving part of the battery case, for allowing internal high-pressure gas to be exhausted out of a battery cell and preventing external gas from being introduced into the battery cell. The secondary battery according to the present invention has the effect of effectively exhausting internal high-pressure gas generated during the abnormal operation of the battery, such as overcharge, out of the battery case, while maintaining the sealability of the battery case, thereby simultaneously improving the efficiency and safety of the battery.

Abstract: Disclosed is a photosensitive resin composition suitable for use in a transflective liquid crystal display (LCD). The photosensitive resin composition uses, as an alkali-soluble binder resin, a blend of two kinds of binder resins. The first binder resin has a weight average molecular weight greater than or equal to 1,000 but lower than 20,000 and contains no reactive group. The second binder resin has a weight average molecular weight greater than or equal to 20,000 but lower than 80,000 and contains reactive groups. The photosensitive resin composition has good adhesion to an underlying substrate while forming a high resolution fine pattern.

Abstract: A mobile terminal including a wireless communication unit configured to access a web page, a display unit configured to display the accessed web page, a receiving unit configured to receive input voice information, and a controller configured to convert the input voice information into text information, to search the displayed web page for objects that include the converted text information, and to control the display unit to distinctively display found objects that include the converted text information from other information displayed on the web page.