Abstract: Example embodiments relate to a method and apparatus for pump fault prediction. A method of predicting a pump fault according to example embodiments may include collecting data in real time for qualitative variables associated with a pump and a corresponding semiconductor fabricating process, wherein the pump is configured to create a vacuum in a chamber during the semiconductor fabricating process. Principal components may be identified based on the collected data. Principal components exerting a primary influence on the operation of the pump may be selected from the identified principal components. A management variable may be generated to represent variations of the selected principal components. The management-variable may be monitored in real time to predict a pump fault.

Abstract: Provided is a vacuum pump having a rotation body cleaning unit. The vacuum pump includes a case provided with rotation guide holes at opposite end parts. The case includes a rotation body placed inside the case and including a rotation shaft having opposite ends rotatably supported by the rotation guide holes and a number of lobes provided in the rotation shaft at predetermined intervals. Further, a cleaning part is supported by the case and placed in a space between the lobes and cleans the rotation body.

Abstract: Provided are methods and apparatus for exposing multiple substrates within a single exposing apparatus using only a single light source wherein a first substrate is exposed in a series of steps or shots during which light transmitted along a primary optical path is directed onto a primary surface of the substrate with the substrate being repositioned between sequential shots. A second substrate is exposed during the period of time while the first substrate is being repositioned by altering the optical path to divert the light from the light source into a secondary optical path that will expose a region on the second substrate. When the first substrate has been repositioned, the diversion of the light is terminated so that the light will again be transmitted along the primary optical path in order to expose the next sequential shot on the primary surface of the first substrate.

Abstract: Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Abstract: A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be processed with the use of plasma. The plasma is produced by introducing a first gas into the chamber and applying a source power to the first gas. The plasma is extinguished after the object is processed with the use of the plasma. Then, a second gas is introduced into the chamber and a source power is applied to the second gas to generate the electrical force of attraction. At this time, the parameters are controlled so that particle contaminants are readily removed without any influence on the object. Also, the same electrode can be used to apply source power to both the first and second gas. Thus, the operation of removing the particle contaminants is relatively simple.

Abstract: A composition for cleaning a probe card that may be a part of a semiconductor probe system and a method of cleaning the probe card using the composition is provided. In one embodiment, the composition includes a basic compound, an alcohol compound, and water. The composition for cleaning the probe card may prevent the probe card from being worn away or corroded, and may effectively remove impurities such as aluminum, aluminum oxide, or organic impurities from the probe card.

Abstract: A method of exposing a wafer to a light comprises transferring an image onto a plurality of shot areas by irradiating a projection light, each of the plurality of shot areas including at least one die area defined on the wafer on which a photoresist film is formed, and scanning the at least one die area adjacent to an edge portion of the wafer by irradiating a scanning light.

Abstract: The apparatus for decomposing PFCs includes an external electrode unit which is coupled to a reference voltage and which defines a flow space for the flow of the PFCs, and an internal electrode unit which is located within the flow space of the external electrode unit so as to define a reaction space between the internal electrode unit and the external electrode unit. The apparatus is also equipped with a voltage supply unit which applies an alternating voltage to the internal electrode unit which is of sufficient voltage and frequency to generate an electron beam within the reaction space which is capable of decomposing the PFCs.

Abstract: A method of exposing a wafer to a light comprises transferring an image onto a plurality of shot areas by irradiating a projection light, each of the plurality of shot areas including at least one die area defined on the wafer on which a photoresist film is formed, and scanning the at least one die area adjacent to an edge portion of the wafer by irradiating a scanning light.

Abstract: Disclosed is an embodiment of an apparatus and method for manufacturing semiconductor devices. A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.

Abstract: The apparatus for decomposing PFCs includes an external electrode unit which is coupled to a reference voltage and which defines a flow space for the flow of the PFCs, and an internal electrode unit which is located within the flow space of the external electrode unit so as to define a reaction space between the internal electrode unit and the external electrode unit. The apparatus is also equipped with a voltage supply unit which applies an alternating voltage to the internal electrode unit which is of sufficient voltage and frequency to generate an electron beam within the reaction space which is capable of decomposing the PFCs.

Abstract: An apparatus and method for removing silicate from a phosphoric acid solution, including a treating unit, a regeneration line coupled to the treating unit, an additive solution supply member in communication with the regeneration line to decrease the temperature of the phosphoric acid solution and the concentration of the phosphoric acid therein, a filter in communication with the regeneration line to remove precipitated silicate particles, and a heating member having a heater and a vaporizing chamber to remove the additive.

Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Abstract: A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract: In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Abstract: In a method and an apparatus for forming layers on substrates, a plurality of substrates is supported by a boat in a processing chamber, and a processing gas is supplied into the processing chamber through a nozzle pipe. The processing gas supplied into processing chamber is excited in plasma state by microwave energy applied through a microwave antenna, and thus layers having uniform thickness may be formed on the substrates by the excited processing gas in the plasma state.

Abstract: In a gas supplying apparatus used to form a layer on a substrate, a liquid reactant is introduced into an atomizer through a liquid mass flow controller and an on-off valve. An aerosol mist formed by the atomizer is introduced into a vaporizer and then vaporized. The on-off valve is coupled with the atomizer and controlled by a valve controller of the liquid mass flow controller. The on-off valve is opened to form the layer and closed during downtime of a layer formation apparatus to prevent leakage of the remaining liquid reactant in a connecting conduit between the liquid mass flow controller and the on-off valve.

Abstract: A method includes providing a first distance between an inlet of a line and a chuck for supporting a substrate. A first material is applied to the substrate on the chuck through the line to process the substrate. A second distance is provided between the inlet of the line and the chuck. Byproducts generated during processing of the substrate are then removed using a second material. Here, the second material has reactivity with respect to the chuck having the second distance from the inlet smaller than that of the second material with respect to the chuck having the first distance from the inlet. A distance between the chuck and the inlet of the line is adequately adjusted in the process using the plasma gas so that the substrate on the chuck may not be moved.