Abstract: Chemical vapor deposition (CVD) processing equipment for use in fabricating a semiconductor device requiring deposition of an insulation layer or a metal layer includes a chamber having an exhaust line in a lower central portion thereof, a heater block for supporting a wafer to be supplied in an interior of the chamber, the heater block having a heating plate in an interior thereof, a support shaft for supporting the heater block, and an electrical wire for providing an electrical connection to the heating plate. The support shaft extends through a bottom of the chamber. The electrical wire extends through the bottom of the chamber within the support shaft.

Abstract: A method of cleaning a deposition chamber includes applying an RF power to a first region of a deposition chamber where a metal oxide layer is attached. The metal oxide layer in the first region is thicker than the metal oxide layer existing at a second region of the deposition chamber. The RF power increases a plasma sheath potential in the first region to a value that is greater than that of a plasma sheath potential in the second region. An etching gas is introduced into the deposition chamber to remove the metal oxide layer. The metal oxide layer attached to the deposition chamber may be rapidly removed by the in-situ process without opening of the deposition chamber.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: A gas delivery system for providing a gas to manufacturing equipment includes a gas supply unit for providing the gas to the manufacturing equipment including devices to regulate the supply of gas from the gas supply unit to the manufacturing equipment. The system includes a main control unit for regulating the supply of the gas to the manufacturing equipment. The gas delivery system includes a supplemental control unit which receives an emergency shutdown signal from the main control unit for closing off the supply of gas in response to a malfunction of the main control unit and generates a signal for maintaining a gas flow to operate the manufacturing equipment until the cause of the malfunction has been determined. With the system, an unnecessary emergency shutdown of gas supply to semiconductor manufacturing equipment in response to a malfunction of a main controller can be prevented.

Abstract: The apparatus for decomposing PFCs includes an external electrode unit which is coupled to a reference voltage and which defines a flow space for the flow of the PFCs, and an internal electrode unit which is located within the flow space of the external electrode unit so as to define a reaction space between the internal electrode unit and the external electrode unit. The apparatus is also equipped with a voltage supply unit which applies an alternating voltage to the internal electrode unit which is of sufficient voltage and frequency to generate an electron beam within the reaction space which is capable of decomposing the PFCs.

Abstract: A method of reducing PFC emissions during a semiconductor manufacturing process that includes a set of sub-processes each of which produces at least one PFC includes the steps of exhausting PFC's produced by each sub-process to a common line to form a combined exhaust stream, treating the combined exhaust stream from each sub-process using a separate PFC abatement system, combining the treated exhaust streams to form a combined treated stream, and wet scrubbing the combined treated stream.

Abstract: A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

Abstract: A method of reducing PFC emissions during a semiconductor manufacturing process that includes a set of sub-processes each of which produces at least one PFC includes the steps of exhausting PFC's produced by each sub-process to a common line to form a combined exhaust stream, treating the combined exhaust stream from each sub-process using a separate PFC abatement system, combining the treated exhaust streams to form a combined treated stream, and wet scrubbing the combined treated stream.

Abstract: An apparatus for manufacturing a semiconductor device employs a vacuum system, in which a heating source is installed in a predetermined portion of a venting-gas inlet. A venting-speed controlling valve is installed in a predetermined portion of an exhaust pipe, for controlling the speed of gas flowing from a load lock chamber to a pump by controlling the opening and closing thereof. An exhaust pipe may have a main pipe with different diameters in different portions to reduce the venting speed. Accordingly, condensation-induced particle formation can be reduced by thus preventing adiabatic expansion of the gas in a load lock chamber.

Abstract: A semiconductor manufacturing system includes a loadlock chamber, a low level vacuum pump connected to said loadlock chamber so as to create a low level vacuum in the loadlock chamber, a processing chamber in which a semiconductor manufacturing process is carried out while the processing chamber is maintained at a high level vacuum, a gate valve interposed between and connecting the loadlock chamber and the processing chamber, and a pressure relieving device for reducing the pressure difference between the low level vacuum of the loadlock chamber and the high level vacuum of the processing chamber at the time the gate valve is opened. The pressure relieving device is a high level vacuum pump which can be dedicated to the loadlock chamber or which can be the same pump as that used to evacuate the processing chamber. The high level vacuum pump is connected to the loadlock chamber by an air valve.

Abstract: An apparatus for manufacturing a semiconductor device by employing a vacuum system is provided. A heating source is installed in a predetermined portion of a venting-gas inlet. A venting-speed controlling valve is installed in a predetermined portion of an exhaust pipe, for controlling the speed of gas flowing from a load lock chamber to a pump by controlling the opening and closing thereof. An exhaust pipe may have a main pipe with different diameters in different portions to reduce the venting speed. Accordingly, condensation-induced particle formation can be reduced by thus preventing adiabatic expansion of the gas in a load lock chamber.

Abstract: An apparatus for depositing particles onto a wafer comprises a particle generator; particle size controller connected to an output terminal of the particle generator, a first transmitting tube connected to an output of the particle size controller; a second and a third transmitter connected to an output terminal of the first transmitting tube; a first counter connected to an output terminal of the second transmitting tube; a particle depositor connected to an output terminal of the third transmitter; a second counter connected to the particle depositor; and a power supplier connected to the particle depositor. The apparatus and a method for depositing the particles onto the wafer provide a wafer on which particles of known size and kind are deposited. Also, the particles of a different kind and size are deposited on the same wafer.

Abstract: An apparatus for depositing particles onto a wafer comprises a particle generating means; particle size controlling means connected to an output terminal of the particle generating means; a first transmitting tube connected to an output of the particle size controlling means; second and a third transmitting means connected to an output terminal of the first transmitting tube; first counting means connected to an output terminal of the second transmitting tube; particle depositing means connected to an output terminal of the third transmitting means; second counting means connected to the particle depositing means; and a power supplier connected to the particle depositing means. The apparatus and a method for depositing the particles onto the wafer provide a wafer on which particles of known size and kind are deposited. Also, the particles of a different kind and size are deposited on the same wafer.