Patents by Inventor Seung-min Ryu
Seung-min Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240282987Abstract: A system for generating electricity and hydrogen is provided. The system includes a fuel cell unit, a liquid-gas separation unit, and a hydrogen separation unit. The fuel cell unit generates electricity and produces a fuel cell unit effluent stream containing hydrogen from a feed containing natural gas and water. The fuel cell unit includes a reformer, and the reformer includes a burner. The liquid-gas separation unit separates the fuel cell unit effluent stream into a liquid stream and a gas stream. The hydrogen separation unit separates the gas stream into a hydrogen stream and an off-gas stream. At least a portion of the off-gas stream is transferred to the burner of the reformer. The system can generate electricity and high purity hydrogen.Type: ApplicationFiled: January 30, 2024Publication date: August 22, 2024Inventors: Young Dae Kim, Chang Kuk Kim, Ki Yeon Jeon, Jae Suk Choi, Seung Tae Ryu, Yeo Min Yoon
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Publication number: 20240276741Abstract: A semiconductor device according to an embodiment includes a substrate, first and second pillar electrodes extending along a vertical direction substantially perpendicular to a surface of the substrate, and a plurality of memory cells disposed between the first and second pillar electrodes. Each of the plurality of memory cells includes first and second shared device layers that are disposed adjacent to the first and second pillar electrodes, respectively, and extend along the vertical direction, first and second base device layers disposed between the first and second shared device layers, and a control gate electrode disposed on one of the first and second base device layers. Both first and second base device layers are disposed on a plane over the substrate and substantially parallel to the surface of the substrate.Type: ApplicationFiled: July 20, 2023Publication date: August 15, 2024Inventors: Bo Min PARK, Seung Wook RYU
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Patent number: 12051586Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.Type: GrantFiled: September 16, 2020Date of Patent: July 30, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-Min Ryu, Jiyu Choi, Gyu-Hee Park, Younjoung Cho
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Patent number: 11929389Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.Type: GrantFiled: May 19, 2021Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Youn-soo Kim, Seung-min Ryu, Chang-su Woo, Hyung-suk Jung, Kyu-ho Cho, Youn-joung Cho
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Publication number: 20230220213Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1: M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.Type: ApplicationFiled: December 22, 2022Publication date: July 13, 2023Applicant: ADEKA CORPORATIONInventors: JAE WOON KIM, Seung-min Ryu, Haruyoshi Sato, Kazuya Saito, Masayuki Kimura, Takahiro Yoshii, Tsubasa Shiratori, Min Jae Sung, Gyu-Hee Park, Youn Joung Cho
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Patent number: 11524973Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.Type: GrantFiled: April 24, 2020Date of Patent: December 13, 2022Assignees: Samsung Electronics Co., Ltd., Adeka CorporationInventors: Seung-Min Ryu, Akio Saito, Takanori Koide, Atsushi Yamashita, Kazuki Harano, Gyu-Hee Park, Soyoung Lee, Jaesoon Lim, Younjoung Cho
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Publication number: 20210380622Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.Type: ApplicationFiled: March 29, 2021Publication date: December 9, 2021Inventors: Seung-Min Ryu, Gyu-Hee Park, Youn Joung Cho, Kazuki Harano, Takanori Koide, Wakana Fuse, Yoshiki Manabe, Yutaro Aoki, Hiroyuki Uchiuzou, Kazuya Saito
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Publication number: 20210273039Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.Type: ApplicationFiled: May 19, 2021Publication date: September 2, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Youn-soo KIM, Seung-min RYU, Chang-su WOO, Hyung-suk JUNG, Kyu-ho CHO, Youn-joung CHO
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Patent number: 11081389Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.Type: GrantFiled: December 12, 2019Date of Patent: August 3, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-min Ryu, Younsoo Kim, Gyu-hee Park, Jaesoon Lim, Younjoung Cho
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Patent number: 11043553Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.Type: GrantFiled: July 24, 2019Date of Patent: June 22, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Youn-soo Kim, Seung-min Ryu, Chang-su Woo, Hyung-suk Jung, Kyu-ho Cho, Youn-joung Cho
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Publication number: 20210175073Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2?L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.Type: ApplicationFiled: September 16, 2020Publication date: June 10, 2021Inventors: Seung-Min RYU, Jiyu CHOI, Gyu-Hee PARK, Younjoung CHO
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Patent number: 11021796Abstract: A gas injector includes first and second gas introduction passages extending in a first direction toward a central axis of a process chamber respectively, a first bypass passage extending from the first gas introduction passage in a second direction that is substantially perpendicular to the first direction, a second bypass passage extending from the second gas introduction passage in a reverse direction to the second direction, a first distribution passage isolated from the first bypass passage in the first direction and extending from an outlet of the first bypass passage in the reverse direction to the second direction, a second distribution passage isolated from the second bypass passage in the first direction and extending from an outlet of the second bypass passage in the second direction, and a plurality of spray holes in an outer surface of the first and second distribution passages and configured to spray the process gas.Type: GrantFiled: December 6, 2018Date of Patent: June 1, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Hyun Lee, Young-Kwon Kim, Woo-Jae Kim, Seung-Min Ryu, Ji-Ho Uh
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Patent number: 10882873Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.Type: GrantFiled: January 16, 2019Date of Patent: January 5, 2021Assignees: SAMSUNG ELECTRONICS CO., LTD., DNF Co., Ltd.Inventors: Seung-min Ryu, Youn-soo Kim, Jae-soon Lim, Youn-joung Cho, Myong-woon Kim, Kang-yong Lee, Sang-ick Lee, Sang-yong Jeon
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Publication number: 20200361970Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.Type: ApplicationFiled: April 24, 2020Publication date: November 19, 2020Applicants: Samsung Electronics Co., Ltd., Adeka CorporationInventors: SEUNG-MIN RYU, AKIO SAITO, TAKANORI KOIDE, ATSUSHI YAMASHITA, KAZUKI HARANO, GYU-HEE PARK, SOYOUNG LEE, JAESOON LIM, YOUNJOUNG CHO
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Publication number: 20200273747Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.Type: ApplicationFiled: December 12, 2019Publication date: August 27, 2020Inventors: Seung-min RYU, Younsoo KIM, Gyu-hee PARK, Jaesoon LIM, Younjoung CHO
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Publication number: 20200231610Abstract: A tin compound, a tin precursor compound for forming a tin-containing layer, and a method of forming a thin layer, the tin compound being represented by Formula 1: wherein R1, R2, R3, R4, R5, R6, and R7 are each independently hydrogen, a linear alkyl group having 1 to 4 carbon atoms, or a branched alkyl group having 3 or 4 carbon atoms.Type: ApplicationFiled: August 29, 2019Publication date: July 23, 2020Applicants: SAMSUNG ELECTRONICS CO., LTD., DNF Co., Ltd.Inventors: Seung-Min RYU, Myong Woon KIM, Younsoo KIM, Sang Ick LEE, Jaesoon LIM, Younjoung CHO, Jun Hee CHO, Won Mook CHAE
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Patent number: 10651031Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):Type: GrantFiled: November 8, 2018Date of Patent: May 12, 2020Assignees: Samsung Electronics Co., Ltd., Adeka CorporationInventors: Seung-min Ryu, Takanori Koide, Naoki Yamada, Jae-soon Lim, Tsubasa Shiratori, Youn-joung Cho
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Publication number: 20200091275Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.Type: ApplicationFiled: July 24, 2019Publication date: March 19, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Youn-soo Kim, Seung-min Ryu, Chang-su Woo, Hyung-suk Jung, Kyu-ho Cho, Youn-joung Cho
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Publication number: 20190330741Abstract: A gas injector includes first and second gas introduction passages extending in a first direction toward a central axis of a process chamber respectively, a first bypass passage extending from the first gas introduction passage in a second direction that is substantially perpendicular to the first direction, a second bypass passage extending from the second gas introduction passage in a reverse direction to the second direction, a first distribution passage isolated from the first bypass passage in the first direction and extending from an outlet of the first bypass passage in the reverse direction to the second direction, a second distribution passage isolated from the second bypass passage in the first direction and extending from an outlet of the second bypass passage in the second direction, and a plurality of spray holes in an outer surface of the first and second distribution passages and configured to spray the process gas.Type: ApplicationFiled: December 6, 2018Publication date: October 31, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Jong-Hyun LEE, Young-Kwon KIM, Woo-Jae KIM, Seung-Min RYU, Ji-Ho UH
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Publication number: 20190144472Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.Type: ApplicationFiled: January 16, 2019Publication date: May 16, 2019Applicant: DNF Co., Ltd.Inventors: Seung-min RYU, Youn-soo KIM, Jae-soon LIM, Youn-joung CHO, Myong-woon KIM, Kang-yong LEE, Sang-ick LEE, Sang-yong JEON