Patents by Inventor Seung-min Ryu

Seung-min Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10651031
    Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: May 12, 2020
    Assignees: Samsung Electronics Co., Ltd., Adeka Corporation
    Inventors: Seung-min Ryu, Takanori Koide, Naoki Yamada, Jae-soon Lim, Tsubasa Shiratori, Youn-joung Cho
  • Patent number: 10645089
    Abstract: An example terminal includes a communication circuitry configured to communicate with a server; and a data processor configured to request the server to include a second user in a relationship group of a first user and to extend, to the relationship group, a range of authorization for an Internet of Things (IoT) apparatus registered as an apparatus of the first user.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: May 5, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., KOREA ELECTRONICS TECHNOLOGY INSTITUTE
    Inventors: Ji-min Chung, Seung-woo Kum, Young-sun Ryu, Tae-beom Lim
  • Publication number: 20200123671
    Abstract: The present invention relates to a electroplating composition and an electroplating method using the same.
    Type: Application
    Filed: December 19, 2018
    Publication date: April 23, 2020
    Inventors: Jong Cheol YUN, Wan Joong KIM, Hee Jeong RYU, Seung Min PARK
  • Publication number: 20200091275
    Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.
    Type: Application
    Filed: July 24, 2019
    Publication date: March 19, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Youn-soo Kim, Seung-min Ryu, Chang-su Woo, Hyung-suk Jung, Kyu-ho Cho, Youn-joung Cho
  • Publication number: 20190358681
    Abstract: A chuck pin, method for manufacturing a chuck pin, and an apparatus for treating substrate. The substrate treating apparatus includes a container having a treating space in its inner side, a supporting unit supporting the substrate inside of the treating space, and a liquid supply unit providing a solution to the supported substrate of the supporting unit. The supporting unit is placed in a supporting plate where the substrate is placed and in the above supporting plate, and includes a chuck pin supporting a side part of the substrate. The chuck pin is formed on a body and on the above surface of the body, and includes a first coating film provided as a silicon carbide material.
    Type: Application
    Filed: August 9, 2019
    Publication date: November 28, 2019
    Inventors: Chong-Min Ryu, Won-Jun Lee, Seung-Ho Seo
  • Publication number: 20190330741
    Abstract: A gas injector includes first and second gas introduction passages extending in a first direction toward a central axis of a process chamber respectively, a first bypass passage extending from the first gas introduction passage in a second direction that is substantially perpendicular to the first direction, a second bypass passage extending from the second gas introduction passage in a reverse direction to the second direction, a first distribution passage isolated from the first bypass passage in the first direction and extending from an outlet of the first bypass passage in the reverse direction to the second direction, a second distribution passage isolated from the second bypass passage in the first direction and extending from an outlet of the second bypass passage in the second direction, and a plurality of spray holes in an outer surface of the first and second distribution passages and configured to spray the process gas.
    Type: Application
    Filed: December 6, 2018
    Publication date: October 31, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jong-Hyun LEE, Young-Kwon KIM, Woo-Jae KIM, Seung-Min RYU, Ji-Ho UH
  • Patent number: 10454863
    Abstract: A data processing device and a data processing method are provided. The data processing device includes a collection storage unit configured to collect and store emotion icon log data for an emotion icon activity of a user with respect to one or more services and an analysis processing unit configured to analyze the emotion icon activity of the user by using the emotion icon log data, and to provide, to a service server, a result obtained by analyzing the emotion icon activity of the user, to allow the service server to apply the result obtained by analyzing the emotion icon activity of the user, to the services.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: October 22, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Je-Hyok Ryu, Shin-Il Kang, Young-Cheon Ko, Jung-Min Son, Seung-Yeol Yoo
  • Publication number: 20190304785
    Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.
    Type: Application
    Filed: August 14, 2017
    Publication date: October 3, 2019
    Applicant: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Doo Yeol RYU, Seung Woo SHIN, Cha Young YOO, Woo Duck JUNG, Ho Min CHOI, Wan Suk OH, Hui Sik KIM, Eun Ho KIM, Seong Jin PARK
  • Publication number: 20190262570
    Abstract: A nasal cannula according to an embodiment of the present invention includes: an oxygen supplying portion which forms a space inside in which a nose and a mouth of a user can be disposed and is able to supply oxygen in a state of being put on by the user into the nose of the user; and a mask portion to which the oxygen supplying portion is attached in a detachable manner therein and is configured to be put on a face of the user. Since a space in which a nose and a mouth of a user can be disposed is provided inside the oxygen supplying portion so that a user can put on the nasal cannula in a convenient state and the oxygen supplying portion is put on in a state of being supported by the mask portion, oxygen can be supplied into the nose of the user and at the same time external air can be filtered.
    Type: Application
    Filed: August 4, 2016
    Publication date: August 29, 2019
    Applicant: SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Tae-Soo LEE, Seung Kwon OH, Seung Hyun RYU, Bong Kwan SON, Sung Hun HA, Dong Min SHIN, Yong Sang SHIN
  • Patent number: 10325688
    Abstract: The present invention relates to a passive heat removal system which circulates cooling fluid to a steam generator via a main water supply line connected to the lower inlet of the steam generator, and a main steam pipe connected to the top outlet of the steam generator, to remove sensible heat of a nuclear reactor coolant system and residual heat of a core. The heat removal system comprises supplementary equipment for receiving surplus cooling fluid or for supplying supplementary cooling fluid in order to maintain the flow rate of the cooling fluid within a predetermined range. The supplementary equipment comprises: a supplementary tank, installed at a height between the lower inlet and the top outlet of the steam generator; a first connection pipe, connected to the main steam pipe and the supplementary tank; and a second connection pipe, connected to the supplementary tank and the main water supply pipe.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: June 18, 2019
    Assignee: KOREA ATOMIC ENERGY RESEARCH INSTITUTE
    Inventors: Young In Kim, Keung Koo Kim, Ju Hyeon Yoon, Jae Joo Ha, Tae Wan Kim, Cheon Tae Park, Seung Yeob Ryu, Han Ok Kang, Young Min Bae, Joo Hyung Moon, Hun Sik Han, Kyung Jun Kang, Soo Jai Shin, Seo Yoon Jung, Young Soo Kim
  • Patent number: 10315964
    Abstract: According to the present invention, a deuterium-substituted marker for fuel is synthesized through substitution with deuterium so as to have structurally and chemically similar properties to those of a molecule configuring fuel oil. A molecule of the deuterium-substituted marker is significantly similar to the conventional molecule configuring the fuel oil, which may prevent illegal removal of the marker by the fake oil manufacturers. According to the present invention, it is able to pursue public safety and environmental protection from fake oil products, and to prevent national tax evasion, by preventing the illegal mixing of fuel oil to secure a legal distribution of the oil market according to the present invention.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: June 11, 2019
    Assignee: Korea Institute of Petroleum Management
    Inventors: Young-Kwan Lim, Hee-Yeon Baek, Kyoung-Heum Lee, Seung-Hyun Ryu, Ju Min Youn, Jong Ryeol Kim, In Ha Hwang, Jong Han Ha
  • Publication number: 20190144472
    Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.
    Type: Application
    Filed: January 16, 2019
    Publication date: May 16, 2019
    Applicant: DNF Co., Ltd.
    Inventors: Seung-min RYU, Youn-soo KIM, Jae-soon LIM, Youn-joung CHO, Myong-woon KIM, Kang-yong LEE, Sang-ick LEE, Sang-yong JEON
  • Publication number: 20190074175
    Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
    Type: Application
    Filed: November 8, 2018
    Publication date: March 7, 2019
    Applicant: ADEKA CORPORATION
    Inventors: Seung-min RYU, Takanori KOIDE, Naoki YAMADA, Jae-soon LIM, Tsubasa SHIRATORI, Youn-joung CHO
  • Patent number: 10208397
    Abstract: An apparatus is provided for depositing a thin film. The apparatus includes a chamber, a susceptor disposed in the chamber and supporting a substrate, a reflection housing disposed outside the chamber, a light source unit disposed in the reflection housing and irradiating light to the susceptor, and a light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor. At least a portion of the light controlling unit is disposed in the reflection housing.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: February 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Min Ryu, Sang Min Lee, Hee Jong Jeong, Chaeho Kim, Ji Su Son, Jaebong Lee, Juwan Lim, Jungwoo Choi
  • Patent number: 10134582
    Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: November 20, 2018
    Assignees: SAMSUNG ELECTRONICS CO., LTD., ADEKA CORPORATION
    Inventors: Seung-min Ryu, Takanori Koide, Naoki Yamada, Jae-soon Lim, Tsubasa Shiratori, Youn-joung Cho
  • Publication number: 20180155372
    Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a Cl to C4 linear or branched alkyl group.
    Type: Application
    Filed: November 30, 2017
    Publication date: June 7, 2018
    Applicant: DNF Co., Ltd.
    Inventors: Seung-min RYU, Youn-soo KIM, Jae-soon LIM, Youn-joung CHO, Myong-woon KIM, Kang-yong LEE, Sang-ick LEE, Sang-yong JEON
  • Patent number: 9871241
    Abstract: There is provided an electrode assembly having increased degrees of structural freedom in the thickness direction thereof. The electrode assembly includes negative and positive electrodes alternately stacked with separators interposed therebetween, wherein the electrode assembly is formed by stacking N electrode stacks where N is a natural number equal to or greater than 2, each of the electrode stacks comprises electrodes having the same area and stacked with separators interposed therebetween, and neighboring electrode stacks of the electrode stacks have different electrode areas, wherein a first electrode stack of the electrode stacks is formed by stacking unit cells respectively including an odd number of electrodes, and the other electrode stacks stacked on the first electrode are formed by stacking unit cells respectively including an even number of electrodes.
    Type: Grant
    Filed: April 18, 2014
    Date of Patent: January 16, 2018
    Assignee: LG Chem, Ltd.
    Inventors: Sung-Jin Kwon, Ki-Woong Kim, Soon-Ho Ahn, Dong-Myung Kim, Young-Hoon Kim, Sung-Han Yoon, Seung-Min Ryu
  • Patent number: 9728758
    Abstract: The present invention relates to a method of manufacturing an electrode assembly, the method including: preparing an electrode laminate including at least one negative electrode, at least one positive electrode, and at least one separation film; generating a separation film assembly by bonding remaining portions of the separation film positioned in regions not corresponding to shapes of the negative electrode and the positive electrode; and cutting the separation film assembly so as to correspond to the shapes of the negative electrode and the positive electrode, and an electrode assembly manufactured by the method.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: August 8, 2017
    Assignee: LG Chem, Ltd.
    Inventors: Sung-Jin Kwon, Soon-Ho Ahn, Dong-Myung Kim, Ki-Woong Kim, Young-Hoon Kim, Sung-Han Yoon, Seung-Min Ryu
  • Patent number: 9698406
    Abstract: An electrode assembly and a method of manufacturing the same are provided. The electrode assembly includes an electrode stack including at least one anode, at least one cathode, and at least one separation film and a plurality of cathode tabs and a plurality of anode tabs for electrically connecting the electrode stack. In this case, the electrode tabs are arranged to allow the electrode tabs having the same polarity to be electrically connected to one another while a portion of the electrode tabs having the same polarity are arranged so as not to overlap one another on the same plane.
    Type: Grant
    Filed: January 7, 2014
    Date of Patent: July 4, 2017
    Assignee: LG Chem, Ltd.
    Inventors: Young-Hoon Kim, Sung-Jin Kwon, Soon-Ho Ahn, Dong-Myung Kim, Ki-Woong Kim, Seung-Min Ryu
  • Publication number: 20170178961
    Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
    Type: Application
    Filed: October 20, 2016
    Publication date: June 22, 2017
    Applicant: ADEKA CORPORATION
    Inventors: Seung-min RYU, Takanori KOIDE, Naoki YAMADA, Jae-soon LIM, Tsubasa SHIRATORI, Youn-joung CHO