Patents by Inventor Seung-min Ryu

Seung-min Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240282987
    Abstract: A system for generating electricity and hydrogen is provided. The system includes a fuel cell unit, a liquid-gas separation unit, and a hydrogen separation unit. The fuel cell unit generates electricity and produces a fuel cell unit effluent stream containing hydrogen from a feed containing natural gas and water. The fuel cell unit includes a reformer, and the reformer includes a burner. The liquid-gas separation unit separates the fuel cell unit effluent stream into a liquid stream and a gas stream. The hydrogen separation unit separates the gas stream into a hydrogen stream and an off-gas stream. At least a portion of the off-gas stream is transferred to the burner of the reformer. The system can generate electricity and high purity hydrogen.
    Type: Application
    Filed: January 30, 2024
    Publication date: August 22, 2024
    Inventors: Young Dae Kim, Chang Kuk Kim, Ki Yeon Jeon, Jae Suk Choi, Seung Tae Ryu, Yeo Min Yoon
  • Publication number: 20240276741
    Abstract: A semiconductor device according to an embodiment includes a substrate, first and second pillar electrodes extending along a vertical direction substantially perpendicular to a surface of the substrate, and a plurality of memory cells disposed between the first and second pillar electrodes. Each of the plurality of memory cells includes first and second shared device layers that are disposed adjacent to the first and second pillar electrodes, respectively, and extend along the vertical direction, first and second base device layers disposed between the first and second shared device layers, and a control gate electrode disposed on one of the first and second base device layers. Both first and second base device layers are disposed on a plane over the substrate and substantially parallel to the surface of the substrate.
    Type: Application
    Filed: July 20, 2023
    Publication date: August 15, 2024
    Inventors: Bo Min PARK, Seung Wook RYU
  • Patent number: 12051586
    Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: July 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-Min Ryu, Jiyu Choi, Gyu-Hee Park, Younjoung Cho
  • Patent number: 11929389
    Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: March 12, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youn-soo Kim, Seung-min Ryu, Chang-su Woo, Hyung-suk Jung, Kyu-ho Cho, Youn-joung Cho
  • Publication number: 20230220213
    Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1: M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.
    Type: Application
    Filed: December 22, 2022
    Publication date: July 13, 2023
    Applicant: ADEKA CORPORATION
    Inventors: JAE WOON KIM, Seung-min Ryu, Haruyoshi Sato, Kazuya Saito, Masayuki Kimura, Takahiro Yoshii, Tsubasa Shiratori, Min Jae Sung, Gyu-Hee Park, Youn Joung Cho
  • Patent number: 11524973
    Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: December 13, 2022
    Assignees: Samsung Electronics Co., Ltd., Adeka Corporation
    Inventors: Seung-Min Ryu, Akio Saito, Takanori Koide, Atsushi Yamashita, Kazuki Harano, Gyu-Hee Park, Soyoung Lee, Jaesoon Lim, Younjoung Cho
  • Publication number: 20210380622
    Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.
    Type: Application
    Filed: March 29, 2021
    Publication date: December 9, 2021
    Inventors: Seung-Min Ryu, Gyu-Hee Park, Youn Joung Cho, Kazuki Harano, Takanori Koide, Wakana Fuse, Yoshiki Manabe, Yutaro Aoki, Hiroyuki Uchiuzou, Kazuya Saito
  • Publication number: 20210273039
    Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.
    Type: Application
    Filed: May 19, 2021
    Publication date: September 2, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Youn-soo KIM, Seung-min RYU, Chang-su WOO, Hyung-suk JUNG, Kyu-ho CHO, Youn-joung CHO
  • Patent number: 11081389
    Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 3, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-min Ryu, Younsoo Kim, Gyu-hee Park, Jaesoon Lim, Younjoung Cho
  • Patent number: 11043553
    Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: June 22, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youn-soo Kim, Seung-min Ryu, Chang-su Woo, Hyung-suk Jung, Kyu-ho Cho, Youn-joung Cho
  • Publication number: 20210175073
    Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2?L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.
    Type: Application
    Filed: September 16, 2020
    Publication date: June 10, 2021
    Inventors: Seung-Min RYU, Jiyu CHOI, Gyu-Hee PARK, Younjoung CHO
  • Patent number: 11021796
    Abstract: A gas injector includes first and second gas introduction passages extending in a first direction toward a central axis of a process chamber respectively, a first bypass passage extending from the first gas introduction passage in a second direction that is substantially perpendicular to the first direction, a second bypass passage extending from the second gas introduction passage in a reverse direction to the second direction, a first distribution passage isolated from the first bypass passage in the first direction and extending from an outlet of the first bypass passage in the reverse direction to the second direction, a second distribution passage isolated from the second bypass passage in the first direction and extending from an outlet of the second bypass passage in the second direction, and a plurality of spray holes in an outer surface of the first and second distribution passages and configured to spray the process gas.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: June 1, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Hyun Lee, Young-Kwon Kim, Woo-Jae Kim, Seung-Min Ryu, Ji-Ho Uh
  • Patent number: 10882873
    Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: January 5, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., DNF Co., Ltd.
    Inventors: Seung-min Ryu, Youn-soo Kim, Jae-soon Lim, Youn-joung Cho, Myong-woon Kim, Kang-yong Lee, Sang-ick Lee, Sang-yong Jeon
  • Publication number: 20200361970
    Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.
    Type: Application
    Filed: April 24, 2020
    Publication date: November 19, 2020
    Applicants: Samsung Electronics Co., Ltd., Adeka Corporation
    Inventors: SEUNG-MIN RYU, AKIO SAITO, TAKANORI KOIDE, ATSUSHI YAMASHITA, KAZUKI HARANO, GYU-HEE PARK, SOYOUNG LEE, JAESOON LIM, YOUNJOUNG CHO
  • Publication number: 20200273747
    Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.
    Type: Application
    Filed: December 12, 2019
    Publication date: August 27, 2020
    Inventors: Seung-min RYU, Younsoo KIM, Gyu-hee PARK, Jaesoon LIM, Younjoung CHO
  • Publication number: 20200231610
    Abstract: A tin compound, a tin precursor compound for forming a tin-containing layer, and a method of forming a thin layer, the tin compound being represented by Formula 1: wherein R1, R2, R3, R4, R5, R6, and R7 are each independently hydrogen, a linear alkyl group having 1 to 4 carbon atoms, or a branched alkyl group having 3 or 4 carbon atoms.
    Type: Application
    Filed: August 29, 2019
    Publication date: July 23, 2020
    Applicants: SAMSUNG ELECTRONICS CO., LTD., DNF Co., Ltd.
    Inventors: Seung-Min RYU, Myong Woon KIM, Younsoo KIM, Sang Ick LEE, Jaesoon LIM, Younjoung CHO, Jun Hee CHO, Won Mook CHAE
  • Patent number: 10651031
    Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: May 12, 2020
    Assignees: Samsung Electronics Co., Ltd., Adeka Corporation
    Inventors: Seung-min Ryu, Takanori Koide, Naoki Yamada, Jae-soon Lim, Tsubasa Shiratori, Youn-joung Cho
  • Publication number: 20200091275
    Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.
    Type: Application
    Filed: July 24, 2019
    Publication date: March 19, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Youn-soo Kim, Seung-min Ryu, Chang-su Woo, Hyung-suk Jung, Kyu-ho Cho, Youn-joung Cho
  • Publication number: 20190330741
    Abstract: A gas injector includes first and second gas introduction passages extending in a first direction toward a central axis of a process chamber respectively, a first bypass passage extending from the first gas introduction passage in a second direction that is substantially perpendicular to the first direction, a second bypass passage extending from the second gas introduction passage in a reverse direction to the second direction, a first distribution passage isolated from the first bypass passage in the first direction and extending from an outlet of the first bypass passage in the reverse direction to the second direction, a second distribution passage isolated from the second bypass passage in the first direction and extending from an outlet of the second bypass passage in the second direction, and a plurality of spray holes in an outer surface of the first and second distribution passages and configured to spray the process gas.
    Type: Application
    Filed: December 6, 2018
    Publication date: October 31, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jong-Hyun LEE, Young-Kwon KIM, Woo-Jae KIM, Seung-Min RYU, Ji-Ho UH
  • Publication number: 20190144472
    Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.
    Type: Application
    Filed: January 16, 2019
    Publication date: May 16, 2019
    Applicant: DNF Co., Ltd.
    Inventors: Seung-min RYU, Youn-soo KIM, Jae-soon LIM, Youn-joung CHO, Myong-woon KIM, Kang-yong LEE, Sang-ick LEE, Sang-yong JEON