Abstract: A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.

Abstract: The present invention relates to a method of manufacturing an array substrate of TFT-LCD. The method includes the following steps. In step 1, a gate metal thin film is deposited on a substrate and patterned into gate electrodes and gate lines by a first patterning process. In step 2, a gate insulation layer, a semiconductor layer and a barrier layer are subsequently deposited on the resultant structure of step 1 and are patterned into gate insulation layer pattern, semiconductor layer pattern and barrier layer pattern by a second patterning process, wherein the barrier layer is used for preventing the semiconductor layer at the TFT channel from being etched. In step 3, an ohmic contact layer, a transparent conductive layer, a source drain metal layer and a passivation layer are subsequently deposited on the resultant structure of step 2, and are patterned into ohmic contact layer pattern, pixel electrodes, data lines, source electrodes, drain electrodes and passivation layer pattern in a patterning process.

Abstract: A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate includes a substrate and a pixel array on the substrate. Each pixel has: a gate line and a gate electrode formed on the substrate; a gate insulating layer formed on the gate line and the gate electrode; a semiconductor layer formed on the gate insulating layer disposed on the gate electrode; an ohmic contact layer having two parts, which are disposed on two sides of the semiconductor layer respectively and are apart from one another; an isolation insulating dielectric layer covering the substrate and the gate insulating layer except a portion on which the semiconductor layer is formed; a pixel electrode formed on the isolation insulating dielectric layer and the ohmic contact layer over the semiconductor layer; a source/drain electrode formed on the pixel electrode over the ohmic contact layer, and a passivation layer at least covering the semiconductor layer.

Abstract: A TFT-LCD array substrate and a method for manufacturing the same are disclosed. In the TFT-LCD array substrate, a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on the source region and the drain region of the semiconductor layer and exposes the channel; a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer; a passivation layer is formed on the TFT, the gate line, and the data line and exposes the pixel electrode.

Abstract: A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate includes a substrate and a pixel array on the substrate. Each pixel has: a gate line and a gate electrode formed on the substrate; a gate insulating layer formed on the gate line and the gate electrode; a semiconductor layer formed on the gate insulating layer disposed on the gate electrode; an ohmic contact layer having two parts, which are disposed on two sides of the semiconductor layer respectively and are apart from one another; an isolation insulating dielectric layer covering the substrate and the gate insulating layer except a portion on which the semiconductor layer is formed; a pixel electrode formed on the isolation insulating dielectric layer and the ohmic contact layer over the semiconductor layer; a source/drain electrode formed on the pixel electrode over the ohmic contact layer, and a passivation layer at least covering the semiconductor layer.

Abstract: The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film.

Abstract: The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film.

Abstract: A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.

Abstract: A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.

Abstract: A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.

Abstract: A TFT-LCD array substrate and a method for manufacturing the same are disclosed. In the TFT-LCD array substrate, a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on the source region and the drain region of the semiconductor layer and exposes the channel; a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer; a passivation layer is formed on the TFT, the gate line, and the data line and exposes the pixel electrode.

Abstract: The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film.

Abstract: A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate includes a substrate and a pixel array on the substrate. Each pixel has: a gate line and a gate electrode formed on the substrate; a gate insulating layer formed on the gate line and the gate electrode; a semiconductor layer formed on the gate insulating layer disposed on the gate electrode; an ohmic contact layer having two parts, which are disposed on two sides of the semiconductor layer respectively and are apart from one another; an isolation insulating dielectric layer covering the substrate and the gate insulating layer except a portion on which the semiconductor layer is formed; a pixel electrode formed on the isolation insulating dielectric layer and the ohmic contact layer over the semiconductor layer; a source/drain electrode formed on the pixel electrode over the ohmic contact layer, and a passivation layer at least covering the semiconductor layer.

Abstract: A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

Abstract: The present invention relates to a method for fabricating a thin film transistor liquid crystal display, which comprises the steps of: forming a gate electrode on an insulating substrate; successively forming first and second insulating films on the insulating substrate including the gate electrode, the first insulating film being formed under first deposition conditions including power, pressure and electrode interval, the second insulating film being formed under second deposition conditions where at least one of the first deposition conditions is changed continuously over time; successively forming first and second amorphous silicon layers on the second insulating film to form an active layer; successively forming an ohmic contact layer and a source/drain electrode on the active layer; and forming a protective film on the resulting structure including the source/drain electrode.

Abstract: The present invention relates to a method for manufacturing a transflective thin film transistor liquid crystal display, which comprises the steps of: forming a gate electrode on an insulating substrate; forming a gate insulating film on the insulating substrate including the gate electrode; forming an active layer and an ohmic contact layer on the gate insulating film; forming source/drain electrodes on the insulating substrate including the active and ohmic contact layers in such a manner that the source/drain electrodes overlap with the ohmic contact layer; forming a protective film on the insulating substrate including the source/drain electrodes; forming a resin layer on the protective film; exposing the resin layer to light through one mask, so that a contact hole is formed at one region of the resin layer, and concave/convex portions having the desired concave/convex portions are formed on the other region of the resin layer; and forming a reflective electrode on the entire upper surface of the resulti

Abstract: The present invention relates to a method for fabricating a thin film transistor liquid crystal display, which comprises the steps of: forming a gate electrode on an insulating substrate; successively forming first and second insulating films on the insulating substrate including the gate electrode, the first insulating film being formed under first deposition conditions including power, pressure and electrode interval, the second insulating film being formed under second deposition conditions where at least one of the first deposition conditions is changed continuously over time; successively forming first and second amorphous silicon layers on the second insulating film to form an active layer; successively forming an ohmic contact layer and a source/drain electrode on the active layer; and forming a protective film on the resulting structure including the source/drain electrode.

Abstract: A method for manufacturing an x-ray detector comprises the steps of: preparing an insulating substrate; forming a gate and a pad on the insulating substrate; forming a gate insulating film, an amorphous silicon layer and an etch stopper over the insulating substrate, inclusive of the gate and the pad; simultaneously forming a channel layer, an ohmic contact layer and a source/drain over the gate insulating film, inclusive of the etch stopper, and a common electrode over a proper portion of the gate insulating film; forming a first storage electrode over the gate insulating film, inclusive of the common electrode; forming a protective layer over the entire structure of the insulating substrate on which the source/drain and the first storage electrode have been formed, and subsequently forming a contact hole and via holes over a proper portion of the protective layer; and forming a second storage electrode over the protective layer.

Abstract: A method for manufacturing an x-ray detector comprises the steps of: preparing an insulating substrate; forming a gate and a pad on the insulating substrate; forming a gate insulating film, an amorphous silicon layer and an etch stopper over the insulating substrate, inclusive of the gate and the pad; simultaneously forming a channel layer, an ohmic contact layer and a source/drain over the gate insulating film, inclusive of the etch stopper, and a common electrode over a proper portion of the gate insulating film; forming a first storage electrode over the gate insulating film, inclusive of the common electrode; forming a protective layer over the entire structure of the insulating substrate on which the source/drain and the first storage electrode have been formed, and subsequently forming a contact hole and via holes over a proper portion of the protective layer; and forming a second storage electrode over the protective layer.

Abstract: Disclosed is a liquid crystal display having an improved characteristic of viewing angle by modifying a pixel electrode and a common electrode construction respectively. In a liquid crystal display, upper and lower substrates are opposed to each other and spaced from each other by a predetermined distance. A liquid crystal layer is interposed between the upper and the lower substrates. A pixel electrode is formed at a portion of an inner surface of the lower substrate corresponding to a pixel area, and the pixel electrode has an uneven surface including first convex portions and first concave portions. A common electrode is formed at a portion of an inner surface of the upper substrate corresponding to the pixel electrode, so as to form an electric field together with the pixel electrode. The common electrode has an uneven surface including second convex portions and second concave portions.