Abstract: A cell unit includes a plurality of battery cells disposed on both surfaces of a unit plate. A case accommodates the cell unit and provided with a cooling device on at least one surface of the case. The unit plate includes a plurality of receiving spaces formed by a plate portion, having a flat surface, and a side portion protruding upwardly and downwardly of the plate portion from both sides of the plate portion. The plurality of battery cells are received in each of the receiving spaces.

Abstract: Discussed is an organic light emitting device in which a light emitting layer includes a host and different kinds of dopants, the fluorescent dopant is formed of a material having energy level properties facilitating thermally activated delayed fluorescence (TADF), and thus energy is concentratedly transferred to the fluorescent dopant so as to increase luminous efficacy of a single color.

Abstract: A battery module of the present disclosure includes a plurality of cell stacks spaced apart from each other in a horizontal direction, a plurality of side walls disposed between the plurality of cell stacks and spaced apart from each other in the horizontal direction, and a plate accommodated in a hollow between the plurality of side walls. Each of the plurality of side walls includes a side hole connected to the hollow.

Abstract: A cleaning apparatus including a vacuum cleaner and a docking station is provided. The cleaning apparatus includes a vacuum cleaner including a dust collecting chamber in which foreign substances are collected, and a docking station configured to be connected to the dust collecting chamber to remove the foreign substances collected in the dust collecting chamber. The dust collecting chamber is configured to collect foreign substances through centrifugation, and configured to be docked to the docking station, and the docking station includes a suction device configured to suction the foreign substances and air in the dust collecting chamber docked to the docking station.

Abstract: A battery module includes a module housing including a first plate in which one side is open, a second plate coupled with the first plate to form an internal space, and a partition member disposed across the internal space to couple the first plate with the second plate; and a battery cell stack disposed in the internal space, in which a plurality of battery cells are stacked.

Abstract: A method for a display device is discussed. The method according to one embodiment includes forming a substrate of the display device; forming a thin film transistor on the substrate; and forming a passivation layer of a photosensitive organic material on the thin film transistor, the passivation layer having a contact hole exposing the thin film transistor. The photosensitive organic material comprises an ultraviolet absorber. The method according to the embodiment includes forming a blocking area in a mask above the contact hole; and absorbing, via the ultraviolet absorber, reflected ultraviolet (UV) rays passing by the blocking area in the mask above the contact hole.

Abstract: Provided are an optical filter and a stereoscopic display device. The exemplary optical filter may be applied to the stereoscopic display device to observe a stereoscopic image in a wide viewing angle without the loss of brightness.

Abstract: A method for a display device is discussed. The method according to one embodiment includes forming a substrate of the display device; forming a thin film transistor on the substrate; and forming a passivation layer of a photosensitive organic material on the thin film transistor, the passivation layer having a contact hole exposing the thin film transistor. The photosensitive organic material comprises an ultraviolet absorber. The method according to the embodiment includes forming a blocking area in a mask above the contact hole; and absorbing, via the ultraviolet absorber, reflected ultraviolet (UV) rays passing by the blocking area in the mask above the contact hole.

Abstract: A substrate for a display device including a base substrate; a thin film transistor on the base substrate; a passivation layer of a photosensitive organic material on the thin film transistor, the passivation layer having a contact hole exposing the thin film transistor, the photosensitive organic material including an ultraviolet absorber; and a pixel electrode on the passivation layer, the pixel electrode connected to the thin film transistor through the contact hole.

Abstract: A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.

Abstract: A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.

Abstract: A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.

Abstract: Provided are an optical filter and a stereoscopic display device. The exemplary optical filter may be applied to the stereoscopic display device to observe a stereoscopic image in a wide viewing angle without the loss of brightness.

Abstract: A substrate for a display device including a base substrate; a thin film transistor on the base substrate; a passivation layer of a photosensitive organic material on the thin film transistor, the passivation layer having a contact hole exposing the thin film transistor, the photosensitive organic material including an ultraviolet absorber; and a pixel electrode on the passivation layer, the pixel electrode connected to the thin film transistor through the contact hole.

Abstract: A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.

Abstract: A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.

Abstract: A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.

Abstract: A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.

Abstract: A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.

Abstract: A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.