Abstract: A method of manufacturing interior parts for a vehicle includes: forming a first plating layer on a surface of an injection molded product through electroless plating; printing a symbol part on the first plating layer; partially removing the first plating layer to a size corresponding to the symbol part from a rear surface of the injection molded product; forming a second plating layer on the first plating layer; and removing the symbol part and the first plating layer from the surface of the injection molded product on which the second plating layer is formed.

Abstract: A semiconductor device may include a bit line extending in a third direction, a plurality of active layers extending in a first direction and contacting the bit line, a plurality of word lines extending in a second direction and each disposed at an top surface or bottom surface of each of the plurality of active layers, a plurality of capacitors contacting the plurality of active layers, and a contact formed in at least one active layer disposed at the uppermost part of the bit line, among the plurality of active layers. The bit line and the contact may be electrically connected or separated by using, as a control line, a word line disposed in the top surface or bottom surface of the at least one active layer, among the plurality of word lines.

Abstract: The present invention relates to induction-heated soldering automation equipment and, particularly, to equipment comprising: a jig unit for fixing a substrate on which an electronic element is mounted; a first conveyor for transferring the jig unit; an induction heating unit which is provided above the jig unit so as to be movable in the X-axis, Y-axis, and Z-axis directions, and which includes a magnetic induction coil for soldering the electronic element by induction-heating the substrate fixed to the jig unit; and a controller for controlling the first conveyor and the induction heating unit, wherein continuously supplied molded interconnected devices (MIDs), PCBs, or FPCBs are locally heated through contactless induction heating so that electronic elements can be automatically soldered in a state in which thermal damage is minimized.

Abstract: The present invention relates to an integrated connector and a heat exchanger including the same, in which a connector main body is formed by pressing one pipe, a cap is press-fitted into the connector main body, such that the integrated connector is formed so that an interior of the connector main body is blocked by the cap. Therefore, the number of components used to manufacture a connector, which connects and securely couples a header tank and a gas-liquid separator, may be reduced, the integrated connector may be easily manufactured, and a brazing defect may be reduced at portions where the integrated connector is joined to the header tank and the gas-liquid separator of the heat exchanger.

Abstract: The present invention relates to a hydroxylphenyl-terminated polysiloxane, a polysiloxane-polycarbonate copolymer comprising the same as repeating unit, and a method for preparing the copolymer, and more specifically, a polysiloxane of a specific structure having terminal silane unit comprising optionally substituted hydroxylphenyl group, and a polysiloxane-polycarbonate copolymer which comprises the polysiloxane and a polycarbonate block as repeating units, and thereby shows the same or more excellent transparency and significantly further improved flame retardancy as compared with the level of conventional polysiloxane-polycarbonate copolymer, and a method for preparing the same.

Abstract: A firmware upgrade apparatus and method are disclosed. A firmware upgrade apparatus according to some embodiments of the present invention includes access points, a relay configured to upload firmware data to the access point, a node configured to upload the firmware data to the relay, and an over-the-air (OTA) access point configured to upload the firmware data to the node.

Abstract: A display device includes a display layer comprising pixels, each of the pixels having at least one thin-film transistor, a connection line electrically connected to the at least one thin-film transistor, the connection line being exposed on a lower surface of the display layer through a first contact hole formed in the display layer, a barrier layer disposed on the lower surface of the display layer and including a second contact hole connected to the first contact hole, a lead line disposed on a lower surface of the barrier layer and electrically connected to the connection line through the second contact hole, a pad part disposed on the lower surface of the barrier layer and electrically connected to the lead line, and a lower film overlapping the lower surface of the barrier layer and the lead line.

Abstract: A method of preparing a lithium secondary battery is provided which may effectively perform pre-lithiation, wherein, a closed square band-shaped lithium foil having an opening formed at a center thereof is prepared during the preparation of the lithium secondary battery, and a negative electrode is disposed in the opening of the lithium foil, but pre-lithiation of the negative electrode may be performed without a separate pre-lithiation process by disposing the negative electrode and the lithium foil so as not to overlap with each other and disposing a negative electrode tab so as to be in contact with the lithium foil.

Abstract: The present disclosure describes to a method embodiment for preparing a carbon nanotube composite that includes performing a first ultrasonic treatment on a first mixture containing a carbon nanotube (CNT) fiber and an acid to form a carbon nanotube fiber swollen body, and performing a second ultrasonic treatment on a second mixture containing the carbon nanotube fiber swollen body, an aromatic monomer, and an initiator to form a carbon nanotube composite including a surface coated with an aromatic monomer-derived conductive polymer, and an embodiment of the carbon nanotube composite prepared therefrom.

Abstract: An optical path control member according to an embodiment includes a first substrate; a first electrode disposed on the first substrate; a second substrate disposed on the first substrate; a second electrode disposed under the second substrate; a light conversion unit disposed between the first electrode and the second electrode and including a plurality of accommodating parts in which a light conversion material is disposed; and a first sealing part and a second sealing part formed in a cutting region formed by cutting the second substrate, the second electrode, and the light conversion unit, and extending in a first direction, wherein the first sealing part and the second sealing part include a sealing region disposed inside the cutting region and an anchor region disposed inside the accommodating part, respectively, and wherein a size of the anchor region of the first sealing part is greater than a size of the anchor region of the second sealing part.

Abstract: A method for fabricating a semiconductor device is provided. The method comprises providing a mask which includes first particles, and second particles spaced apart from the first particles, on a surface of the mask, applying a first adhesive over the first particles on the mask, irradiating the first adhesive with light on a first position of the first particles to cure the first adhesive, resulting in a cured first adhesive, forming a first adhesive film from the cured first adhesive in which the first particles are stuck to the first adhesive and removing the first adhesive film on the mask, wherein the first adhesive overlaps a first region of the surface of the mask in which the first particles are disposed, and does not overlap a second region spaced laterally from the first region of the mask.

Abstract: An embodiment provides an air conditioner for a vehicle, the air conditioner including an air conditioning unit having a heat exchanger disposed therein, and a blower unit configured to supply air to the air conditioning unit, in which the blower unit includes a blower casing having an inner surface, and a blower configured to allow the air to flow toward the inner surface, in which the inner surface includes a first surface, and a second surface disposed on the first surface and inclined, and in which the first and second surfaces divide a direction of the air, which is allowed to flow by the blower, into at least two directions. Therefore, the air conditioner for a vehicle may improve performance and quality of the blower unit.

Abstract: A light emitting diode device including a substrate, a plurality of terminals disposed on the substrate, and a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, in which each of the light sources includes a light emitting diode chip, and a wall surrounding side surfaces of the light emitting diode chip, at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip, and at least two light sources share the wall.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor includes: a substrate including a first area and a second area; a plurality of unit pixels disposed in the substrate, wherein each of the plurality of unit pixels includes a photoelectric conversion layer; a pixel defining pattern separating the unit pixels from each other; a surface insulating film disposed on the substrate; a line structure disposed on the substrate, and including a first interline insulating film and a wire pattern disposed in the first interline insulating film; a micro-lens disposed in the first area; and a light-blocking film disposed in the second area. The light-blocking film includes: a horizontal light-blocking film extending along a top surface of the surface insulating film; and a vertical light-blocking film extending through the surface insulating film and the substrate. The vertical light-blocking film is electrically connected to the wire pattern. The light-blocking film is electrically connected to the pixel defining pattern.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor and an electronic apparatus, the image sensor including a plurality of pixels, each pixel of the plurality of pixels including a photodiode and a transfer transistor, a reset transistor, a source-follower transistor, and a selection transistor, which correspond to the photodiode; a plurality of first interconnection lines connected to gates of the transfer transistor, the reset transistor, and the selection transistor, the plurality of first interconnection lines extending in a first direction; and a plurality of second interconnection lines connected to a source region of the selection transistor, the plurality of second interconnection lines extending in a second direction that intersects the first direction, wherein the plurality of second interconnection lines includes dummy lines on a peripheral area that is outside of a pixel area in which the pixels are located.

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.