Abstract: The present invention relates to an integrated connector and a heat exchanger including the same, in which a connector main body is formed by pressing one pipe, a cap is press-fitted into the connector main body, such that the integrated connector is formed so that an interior of the connector main body is blocked by the cap. Therefore, the number of components used to manufacture a connector, which connects and securely couples a header tank and a gas-liquid separator, may be reduced, the integrated connector may be easily manufactured, and a brazing defect may be reduced at portions where the integrated connector is joined to the header tank and the gas-liquid separator of the heat exchanger.

Abstract: Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.

Abstract: A display apparatus includes a first area and a second area, a pixel defining layer having a first opening in the first area with a first area size, and a second opening in the second area with a second area size, a first light emitting unit having an emission area size corresponding to the first area size and emitting first color light, a second light emitting unit having an emission area size corresponding to the second area size and emitting the first color light, a first pixel circuit in the second area and connected to the first light emitting unit, a second pixel circuit in the second area and connected to the second light emitting unit, and an electronic module in the first area and overlapping the first opening. An opening rate of the first light emitting unit is smaller than that of the second light emitting unit.

Abstract: An embodiments may be related to a display device. A display device may include display layer and an antenna. The display layer may comprise a first display area including an exposed area and a cover area, a folding display area adjacent to the first display area, and a second display area adjacent to the folding area. The antenna disposed on the exposed area of the first display area, wherein the second display area covers the cover area of the first display area and exposes the exposed area of the first display area, when the folding display area is folded.

Abstract: A phase locked loop circuit and a semiconductor device are provided. The phased locked loop circuit includes a reference current generator configured to generate a summed compensation current in which at least one of a process change, a temperature change or a power supply voltage change are compensated and output the summed compensation current as a reference current, a current digital-to-analog converter configured to convert the reference current into a control current in accordance with a digital code and a voltage control oscillator configured to generate a signal based on the control current, wherein the summed compensation current is based on weighted-averaging a first type compensation current and a second type compensation current in response to at least one of the process change, the temperature change or the power supply voltage change.

Abstract: A display device may include a first electrode, a second electrode, an emission layer, an intervening layer, and a first encapsulation layer. The second electrode may overlap the first electrode. The emission layer may be disposed between the first electrode and the second electrode, may overlap the first electrode, and may include a light emitting material. The intervening layer may directly contact the second electrode, may be spaced from each of the first electrode and the emission layer, and may include a fluorine compound. A first section of the first encapsulation layer may overlap the emission layer. The intervening layer may be positioned between the second electrode and a second section of the first encapsulation layer.

Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.

Abstract: Disclosed is a display device including a display panel that displays an image on a display surface and an input sensor having a sensor area and a dummy area defined therein. The input sensor includes a first conductive layer that is disposed on the display panel and that includes a first dummy electrode disposed in the sensor area and the dummy area, a second conductive layer that is disposed on the first conductive layer and that includes a sensor electrode disposed in the sensor area and a second dummy electrode disposed in the dummy area, and a pressure sensor electrode disposed between the first dummy electrode and the second dummy electrode.

Abstract: The present disclosure relates to an ultraviolet light-blocking composition containing a centipede grass extract and a cosmetic composition and, more specifically, to an ultraviolet light-blocking composition comprising a centipede grass (Eremochloa ophiuroides) leaf extract as an active ingredient; and a cosmetic composition containing the ultraviolet light-blocking composition.

Abstract: A method and apparatus for backward driving assist of a vehicle, the method comprises: obtaining first coordinate information for the real-time location of the vehicle; detecting an object around the vehicle, and obtaining second coordinate information for the real-time location of the vehicle; determining a location of the vehicle based on the first and second coordinate information; and performing backward driving assist control based on the determined location of the vehicle.

Abstract: A display device includes a glass substrate including a first surface, a second surface opposite to the first surface, and a side surface between the first and second surfaces, an outermost structure disposed on the first surface and adjacent to an edge of the glass substrate, and a display area including a plurality of emission areas spaced apart from the edge on the first surface of the glass substrate. The side surface has a curved shape with the edge protruding to an outermost side of the glass substrate, the side surface includes a first side surface between the edge and the first surface, and a second side surface between the edge and the second surface and having a different curvature from the first side surface, and the glass substrate includes an edge area on the first surface, adjacent to the edge, and, in which processing traces are left.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. The organic electroluminescent compound of the present disclosure may be comprised in a light-emitting layer, and is effective for producing an organic electroluminescent device having high luminescent efficiency and/or excellent lifespan characteristic.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor includes: a substrate including a first area and a second area; a plurality of unit pixels disposed in the substrate, wherein each of the plurality of unit pixels includes a photoelectric conversion layer; a pixel defining pattern separating the unit pixels from each other; a surface insulating film disposed on the substrate; a line structure disposed on the substrate, and including a first interline insulating film and a wire pattern disposed in the first interline insulating film; a micro-lens disposed in the first area; and a light-blocking film disposed in the second area. The light-blocking film includes: a horizontal light-blocking film extending along a top surface of the surface insulating film; and a vertical light-blocking film extending through the surface insulating film and the substrate. The vertical light-blocking film is electrically connected to the wire pattern. The light-blocking film is electrically connected to the pixel defining pattern.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor and an electronic apparatus, the image sensor including a plurality of pixels, each pixel of the plurality of pixels including a photodiode and a transfer transistor, a reset transistor, a source-follower transistor, and a selection transistor, which correspond to the photodiode; a plurality of first interconnection lines connected to gates of the transfer transistor, the reset transistor, and the selection transistor, the plurality of first interconnection lines extending in a first direction; and a plurality of second interconnection lines connected to a source region of the selection transistor, the plurality of second interconnection lines extending in a second direction that intersects the first direction, wherein the plurality of second interconnection lines includes dummy lines on a peripheral area that is outside of a pixel area in which the pixels are located.

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.